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  • 1
    Electronic Resource
    Electronic Resource
    Growth of BaF2 and of BaF2/SrF2 layers on (001)-oriented GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1680-1686 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of BaF2 on (001)-oriented GaAs substrates as well as on thin intermediate (001)-oriented SrF2 buffers has been studied by in situ reflection high-energy electron diffraction. Despite the huge lattice mismatch of 9.7% between GaAs and BaF2, a perfect overgrowth, but in a three-dimensional manner, is observed at sufficiently high substrate temperatures (Ts=580 °C). With an intermediate SrF2 buffer of about 500 A(ring) thickness the growth mode for BaF2 becomes quasi two dimensional. At room temperature, thermal misfit strains of about 5×10−3 are observed by x-ray diffractometry for both the SrF2 and BaF2 layers if their total thickness is lower then 1500 A(ring). For thicker BaF2 layers strain relief is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344386
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  • 2
    Electronic Resource
    Electronic Resource
    Control of carrier lifetimes in PbTe doping superlattices (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2179-2181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Following subnanosecond pulsed laser excitation, time-resolved photoconductivity has been measured in PbTe doping superlattices in the temperature range 50–200 K. The carrier lifetime changes drastically by about three orders of magnitude during the recombination processes indicating an instantaneous lifetime which varies from a ns time scale up to about 1 μs. The temporal evolution is explained by the initially complete flattening of the built-in superlattice electrostatic potential and its recovery with the decrease in the nonequilibrium carrier concentration. The temperature dependence of the recombination is determined by both the bulk band structure of PbTe and the superlattice potential. The effective lifetime initially increases with temperature due to a decrease in the electron-hole recombination by tunneling, but decreases at higher temperatures where a thermal activation process dominates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341083
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  • 3
    Electronic Resource
    Electronic Resource
    Midinfrared surface-emitting PbSe/PbEuTe quantum-dot lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1225-1227 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared laser emission from self-organized PbSe quantum dots in a high-finesse vertical-cavity surface-emitting laser structure is reported. The structure was grown by molecular-beam epitaxy and consists of high reflectivity epitaxial EuTe/PbEuTe Bragg mirrors with a PbSe/Pb1−xEuxTe quantum-dot superlattice as the active region. Narrow laser emission at 4.2–3.9 μm induced by optical pumping is achieved at temperatures up to 90 K. The observation of simultaneous two-mode emission indicates a width of the inhomogeneously broadened PbSe dot gain spectrum of about 18 meV. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389517
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  • 4
    Electronic Resource
    Electronic Resource
    Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3953-3955 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the vertical correlation properties of SiGe islands in a series of Si/SiGe multilayers using grazing incidence x-ray diffraction. The degree of island correlation is found to strongly depend on the thickness of the Si spacer layer separating subsequent SiGe layers. A comparison with results obtained from transmission electron microscopy demonstrates the feasibility of the x-ray diffraction method for the investigation of sample series, and an improved statistical accuracy of the obtained parameters: with x-ray diffraction, the statistical average of typically 106–107 island columns is obtained, compared to only few in the case of transmission electron microscopy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333683
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  • 5
    Electronic Resource
    Electronic Resource
    Strain and composition distribution in uncapped SiGe islands from x-ray diffraction (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1474-1476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the strain and composition distribution in uncapped SiGe islands grown on Si (001) by x-ray diffraction. In order to be sensitive to the dot layer on the sample surface, and at the same time being able to measure in-plane strain and strain in growth direction, we utilized a scattering geometry at grazing incidence angles, but with high exit angles. The measured intensity distribution is compared to simulations based on the strain distribution calculated by a finite element method. Although pure Ge has been deposited during island growth by molecular beam epitaxy, the Ge composition varies from 0.5 at the island base to 1.0 at the top of the islands. Even at this top, the elastic relaxation reaches only about 50%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392975
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  • 6
    Electronic Resource
    Electronic Resource
    Intraband absorption and photocurrent spectroscopy of self-assembled p-type Si/SiGe quantum dots (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2093-2095 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In infrared transmission and photocurrent spectra of self-assembled SiGe quantum dot samples grown in the Stranski–Krastanow mode at temperatures around T=520 °C different types of transitions are observed: in the transmission experiments, an absorption line due to bound-to-bound transitions is measured whereas the photocurrent spectra are determined by bound-to-continuum transitions. The experimental determination of the energies of both types of transitions for the same sample allows a detailed discussion of the features observed in the spectra as well as an estimate of the average Ge content in the dots. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458531
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  • 7
    Electronic Resource
    Electronic Resource
    Makro- und Mikrochirurgie sowie Indikationsstellung zur IVF bei tubarer Sterilität (1985)
    Springer
    Archives of gynecology and obstetrics 238 (1985), S. 147-149 
    Details
    ISSN: 1432-0711
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Zusammenfassung Im Vergleich der Schwangerschaftsraten sowie der Tubendurchgängigkeit nach der Operation liegen die mikrochirurgisch operierten Patientinnen deutlich besser. Die Domäne der Mikrochirurgie liegt auch nach unseren Ergebnissen bei der Anastomose. Bei der Refertilisierung nach Sterilisatio sind die Ergebnisse am besten. Bei den heute noch relativ schlechten Erfolgsraten der IVF wird in allen Fällen eine mikrochirurgische Sterilitätslaparotomie vorangehen. Dabei kann man den Zustand der Tuben am besten beurteilen und den Operationserfolg abschätzen. Bei aussichtslosem Befund sollten die Ovarien funktionsgerecht im kleinen Becken plaziert werden, um möglichst eine ultraschallkontrollierte Follikelpunktion für die spätere IVF zu ermöglichen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02429938
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  • 8
    Electronic Resource
    Electronic Resource
    Temperature dependence of photodegradation in amorphous hydrogenated silicon (1988)
    Springer
    Applied physics 46 (1988), S. 5-8 
    Details
    ISSN: 1432-0630
    Keywords: 73.60 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements of steady-state photoconductivity with respect to light-induced defect generation in amorphous hydrogenated silicon (a-Si: H) show that the power index of the time evolution (long-term observation) of the photodegradation is determined by the exposure temperature and the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615129
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  • 9
    Electronic Resource
    Electronic Resource
    Correlation between the 8- and 10-kHz atmospherics and the inflammation reaction of rats (1986)
    Springer
    Naturwissenschaften 73 (1986), S. 625-626 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00368780
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  • 10
    Electronic Resource
    Electronic Resource
    Further purification and characterization of hepatopoietin (1988)
    Springer
    Naturwissenschaften 75 (1988), S. 458-458 
    Details
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00364026
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