Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 2000-2004  (15)
  • 1985-1989  (3)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8793-8795 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature electroluminescence corresponding to Si band gap energy from metal–oxide–semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal–oxide–semiconductor structures behave like light emitting diodes. Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron–hole radiative recombination to occur relatively easily. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 637-639 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–silicon tunneling diodes with SiO2/Si interface passivated by hydrogen or deuterium are stressed under various constant current conditions. When the energy of injected electrons exceeds a threshold value (∼3 eV), both hydrogen and deuterium passivated devices reveal similar soft breakdown behaviors. On the contrary, when the injected electrons with low energy (〈3 eV) at high current density stress, a giant isotope effect is observed in the deuterated devices due to the resonance between the Si–D bond bending mode and the transverse optical phonon of bulk silicon. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2264-2266 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide–silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1111-1113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature performance of metal–oxide–silicon tunneling light-emitting diodes was studied. An electron–hole-plasma model can be used to fit all the emission spectra from room temperature to 98 K. At constant voltage bias in the accumulation region, the normalized integral emission intensity slightly increases at low temperature with activation energy as low as 12 meV. From room temperature down to 98 K, the extracted band gaps are ∼80 meV lower than the value of Varshni equation, and the linewidth drops from 65 to 30 meV. The transverse optical and longitudinal optical phonons are involved in the light-emission process due to the reduction of extracted band gaps and the resemblance between electroluminescence and photoluminescence spectra at similar temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1397-1399 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reliability of electroluminescence from metal–oxide–silicon (MOS) tunneling diodes was improved by the incorporation of deuterium. The deuterium was incorporated by the deuterium prebake and the postoxide deuterium annealing. At constant current stress of 100 mA, a deuterium-treated n-channel MOS tunneling light-emitting diode shows that the integrated light emission intensity increases slightly about 6% after 10 000 s operation, while the hydrogen-treated device shows a 30% decrease of the integrated light emission intensity. The hydrogen release by the electrons tunneling from the gate electrode to Si and the formation of interface defects are responsible for the degradation of light output in the hydrogen-treated samples. An annealing model is also given to explain the slight increase of light output in the deuterium-treated samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1516-1518 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1055-1062 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal characteristics of matrix-addressed smectic liquid-crystal cells are studied using the temperature dependence of the resistance of the heater and detector lines and compared to analytic solutions. The cell behavior is most strongly affected by the thermal properties of the substrate near the liquid crystal if the heater is at that interface. Cell features further away from the heater have a smaller influence. The cell power efficiency improves if the thermal flow through the substrate is reduced relative to the liquid crystal. The cell addressing speed can be increased if the substrate has two layers composed of a thin insulator on a conducting layer. Increasing the insulator thickness improves efficiency but reduces speed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1022-1028 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared reflection and transmission measurements were used to study the thermally induced regrowth of (100) oriented, Be-implanted GaAs samples. The samples used in this study were implanted at low temperature (−100 °C) with 250-keV Be ions to a fluence of 6×1015 cm−2. The samples were postannealed at temperatures ranging from 100 to 550 °C. Isochronal and isothermal annealing at a series of temperatures between 180 and 240 °C were performed. Infrared reflection spectra were analyzed by using a three or four layer dielectric model. Analysis of the annealing data suggests that an amorphous layer first anneals to a second metastable amorphous state and then becomes a damaged crystalline layer after annealing at 220 °C for 12 h. The observed regrowth is not by a simple epitaxial process. After annealing at 400 °C for 1 h, the damage in the layer is reduced sufficiently for the refractive index to recover almost to the preimplantation value. On annealing at 450 °C free carriers are observed. From the measured average regrowth rate for the amorphous layer at various anneal temperature, an effective activation energy is estimated to be about 1.45 eV. This compares with activation energies of 2.3 eV for Si and 2.0 eV for Ge.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    ISSN: 1365-2826
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Noradrenergic inputs to the hypothalamic paraventricular nucleus (PVN) play important roles in the regulation of neuroendocrine and autonomic functions. Previous reports show that noradrenaline increases the frequency of spontaneous inhibitory postsynaptic currents (sIPSCs) in a subpopulation of type II neurones, acting via α1-adrenoceptors (ARs), but reduces this frequency in most type I and another subpopulation of type II neurones, via α2-ARs on presynaptic GABA neurones. Here, we identified the subtypes of α-ARs mediating noradrenaline-induced increases and decreases in the sIPSC frequency of PVN neurones, by using slice patch recordings from PVN neurones. In both type I and II neurones, the noradrenaline-induced decrease in sIPSC frequency was completely blocked by BRL44408 (α2A-AR antagonist) at 1–3 µM, which is approximately 1/100 of its equilibrium dissociation constant (pA2 = 8.0), but not by prazosin (20–100 µM, α2B/C-AR antagonist; pA2 = 7.5). The effect of noradrenaline was mimicked by guanfacine (α2A-AR agonist) with an EC50 of 0.1 µM. In type II neurones, the noradrenaline-induced increase in sIPSC frequency was not blocked by any of the following antagonists: RS17053 (10 µM, α1A-AR antagonist), BMY7378 (2 µM, α1D-AR antagonist), prazosin (0.1 µM, α1-AR antagonist; pA2 = 10.5), or chloroethylclonidine (10 µM, α1B/D-AR antagonist). However, the effect of noradrenaline was blocked by higher concentrations of prazosin (1 µM) or RS17053 (100 µM), suggesting the involvement of α1L-subtype, a low affinity form of α1A-ARs. Collectively, our results indicate that the α2A-, or α1L-ARs on the GABA neurones mediate the noradrenaline-induced decreases, or increases in the frequencies of the sIPSCs of PVN neurones, respectively.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    ISSN: 1365-2826
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...