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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4499-4503 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have observed many collision-induced-dipole (CID) absorption bands arising from the transitions between quasimolecular ground and high-lying (n≤10) states in the strontium–rare-gas systems. For each absorption band, we have measured the energy shift of the absorption peak from the energy of the correlating atomic forbidden transition and the effective oscillator strength per unit perturber density fCID/Np. The shift is roughly proportional to the electron scattering length L0 for each rare-gas atom, whereas the fCID/Np is roughly proportional to L20. The shift decreases in general as the principal quantum number n increases, and increases as one goes from the s state to the d state, and to the degenerate manifold state with l≥3. These general features of the shift and fCID/Np are consistent with the predictions by a simple Fermi-potential model, suggesting the important role of the interaction between a Rydberg electron and a rare-gas atom in the CID absorption processes.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 4495-4498 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Reduced absorption coefficients have been measured for the collision-induced-dipole (CID) absorption bands associated with the 5s–4d transition of atomic strontium perturbed by He, Ne, Ar, Kr, Xe, and Sr. The main CID absorption band, assigned to 5sΣ–4dΣ, extends from the position of the atomic 5s–4d transition towards the shorter-wavelength side for every perturber. For Xe and Kr, an additional small absorption band is seen at the foot of the atomic 5s–4d transition. The former 5sΣ–4dΣ band is interpreted to result from collisional mixing of the 5p state of atomic Sr into the molecular 4dΣ state for small internuclear separations, while the latter band is interpreted to result from the collisional quadrupole (strontium)–dipole (Xe or Kr) interaction.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1790-1793 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent p-type conducting CuGaO2 thin films were prepared on α-Al2O3 (001) single-crystal substrates by pulsed laser deposition. The films were grown epitaxially on the substrates in an as-deposited state. X-ray pole figure analysis revealed that the films were composed of two types of epitaxial grains, both with c axes oriented perpendicular to the surface and a axes rotated 60° with respect to each other around the c axis. Observation of the CuGaO2 thin films by atomic force microscopy and high-resolution transmission electron microscopy substantiated this conclusion. The films have high optical transparency (∼80%) in the visible region, and the energy gap of CuGaO2 for direct allowed transition was estimated to be 3.6 eV. p-type conductivity was confirmed by Seebeck and Hall measurements. The electrical conductivity, carrier (positive hole) density, and Hall mobility of the films at room temperature were 6.3×10−2 S cm−1, 1.7×1018 cm−3, and 0.23 cm2 V−1 s−1, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2017-2022 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of H+ or He+ ions into highly oriented WO3 films, which were deposited on sapphire R-plane substrates by the pulsed laser deposition method, was carried out to generate carrier electrons. X-ray diffraction measurements revealed that the films consisted of only the two types of grains that were epitaxially grown with their c axes perpendicular to the surface of the substrate. After implantation to a dose of 1×1017 cm−2, a remarkable increase in conductivity at 300 K was observed to 200 Scm−1 for H+ implantation or to 3 Scm−1 for He+ implantation. The efficiency of carrier generation was ∼60% for H+ implantation or ∼10−3% for He+ implantation. This striking difference demonstrates that the chemical effect of bronze formation is much more effective for carrier generation in WO3 than is the physical effect of oxygen vacancy formation by nuclear collision processes. The resulting conductivity of the oriented films was higher by 1–3 orders of magnitude than that of the corresponding polycrystalline film prepared by the rf sputtering method. Hall mobility in the oriented films (∼1 cm2 V−1 s−1) was as high as that (1–2 cm2 V−1 s−1) in single-crystal Na0.40WO3 or WO2.99 and was higher by several orders of magnitude than that in polycrystalline films. The results of Hall voltage and x-ray diffraction measurements led to the conclusion that the higher conductivity in the highly oriented films mainly originates from an increase in carrier mobility, which results from decreases in grain boundary effects as scattering centers. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2112-2117 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of MgIn2O4 were grown on MgO(100) single-crystal substrates through the pulsed laser deposition technique. X-ray diffraction measurements revealed film orientations MgIn2O4(h00)//MgO(h00) and MgIn2O4(0k0)//MgO(0k0), respectively. Proton implantation was applied to generate carrier electrons in the films. The electrical conductivity of the as-deposited films is below ∼10−7 S cm−1 at room temperature. The maximum conductivity of ∼70 S cm−1 was obtained by the implantation. Hall voltage measurements revealed that H+ implantation causes carrier generation in proportion to H+ fluence without reduction of electron mobility. Following the post-annealing process resulted in further enhancement of the conductivity in each H+-implanted film, as conductivity and generation efficiency were found to increase up to ∼2×102 S cm−1 and ∼95% at the maximum, respectively. This differs from the behavior of polycrystalline films in which conductivity decreased by post-annealing due to a decrease in the Hall mobility of electrons. Thus it is concluded that crystal quality is crucial for heavy carrier doping by ion implantation, especially when utilizing post-annealing treatments to enhance the carrier generation efficiency without reduction of the Hall mobility. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5134-5136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heavy fermion compound Ce7Ni3 is an antiferromagnet with TN∼1.7 K. According to the high pressure experiment, this compound has undergone a transition to a non-Fermi liquid state at ∼0.32 GPa and has recovered a Fermi liquid state at ∼0.62 GPa again. Before the high pressure nuclear magnetic resonance (NMR) study through two transitions, we have performed NMR experiments of 61Ni, 59Co and 63Cu in order to clarify the electronic states at ambient pressure. Two kinds of partially overlapping Ni NMR spectra were observed in Ce7Ni3 containing an enriched 61Ni. This result may be ascribed to two intrinsic local fields presumably due to the lattice distortion, etc. All the relaxation rates studied here are proportional to temperature above 1.4 K in the paramagnetic state, which indicates that the systems are in the Fermi liquid state at ambient pressure. The increase of (1/T1T) with increasing Co concentration, CCo, tells us that the partial density of states on Ni-3d states at Fermi level, N(EF)Ni, increase with CCo. On the contrary, CCu-independent (1/T1T) values indicate N(EF)Ni keep almost constant with Cu doping. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: To assess the ability of the high-speed K-edge energy subtraction system which was made at beamline 8C of Photon Factory, Tsukuba, we performed an animal experiment. Rabbits were used for the intravenous K-edge subtraction angiography. In this paper, the actual images of the artery obtained by this system, are demonstrated. The high-speed K-edge subtraction system consisted of movable silicon (111) monocrystals, II–ITV, and digital memory system. Image processing was performed by 68000-IP computer. The monochromatic x-ray beam size was 50×60 mm. Photon energy above and below iodine K edge was changed within 16 ms and 32 frames of images were obtained sequentially. The rabbits were anaesthetized by phenobarbital and a 5F catheter was inserted into inferior vena cava via the femoral vein. 1.5 ml/kg of contrast material (Conlaxin H) was injected at the rate of 0.5 ml/kg/s. TV images were obtained 3 s after the starting point of injection. By using this system, the clear K-edge subtracted images were obtained sequentially as a conventional DSA system. The quality of the images were better than that obtained by DSA. The dynamical blood flow was analyzed, and the best arterial image could be selected from the sequential images. The structures of aortic arch, common carotid arteries, right subclavian artery, and internal thoracic artery were obtained at the chest. Both common carotid arteries and vertebral arteries were recorded at the neck. The diameter of about 0.3–0.4 mm artery could be clearly revealed. The high-speed K-edge subtraction system demonstrates the very sharp arterial images clearly and dynamically.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 888-891 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Stainless-steel cells with a small cooled length (window to hot zone) to tube diameter ratio designed for use at electron storage rings have been constructed and tested using barium metal. Under optimum conditions of barium sample size and helium buffer gas pressure the cell and oven system can be operated for at least 8 h with constant (within experimental errors) line-of-sight number densities, Nl, of ∼1016 cm−2. When Nl values begin to fall toward the end of their initially constant period or the light path becomes blocked by barium condensed at the edge of the hot zone, the original cell conditions can be regenerated within 15 min. These regeneration procedures provide essentially unlimited (though segmented) operation of the system with constant Nl values.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The design and operation of the time-of-flight (TOF) mass spectrometer developed for ionic photofragmentation studies of molecules is described. Characteristics are summarized for three different operation modes of the TOF spectrometer; a pulse mode, a photoelectron–photoion coincidence mode, and a photoion–photoion coincidence mode. Experimental results for SiH4 are demonstrated as an example for the performance of the apparatus.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 5 (1989), S. 1326-1331 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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