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  • 2000-2004  (12)
  • 1960-1964  (5)
  • 1925-1929  (2)
  • 1905-1909  (3)
  • 1870-1879  (7)
  • 1860-1869  (5)
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Material
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Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    ADAPTATION OF LATTICE VACANCY THEORY TO GAS ADSORPTION PHENOMENA (1962)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 66 (1962), S. 1305-1308 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100813a022
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Closely stacked InAs/GaAs quantum dots grown at low growth rate (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1544-1546 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic study of closely stacked InAs/GaAs quantum dots (QDs) grown at low growth rates. Transmission electron microscopy reveals that for thin spacer layers vertically aligned QDs merge into one large QD. After capping the initial QD layer the GaAs surface is decorated with well-developed nanostructures, which act as nucleation centers for the QDs deposited in the second layer. Despite the size increase, photoluminescence (PL) experiments show a systematic blueshift up to 103 meV of the QD related signal with decreasing spacer thickness. We explicitly show that this significant blueshift cannot fully be ascribed to specific growth phenomena, but instead is caused by the actual presence of the second dot layer. We report a PL linewidth as narrow as 16 meV at low temperature for a sample with 5 nm spacer thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456954
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1279-1281 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature epitaxial growth of Si–Ge heterostructures opens possibilities for synthesizing very small and abrupt low-dimensional structures due to the low adatom surface mobilities. We present photoluminescence from Ge quantum structures grown by molecular-beam epitaxy at low temperatures which reveals a transition from two-dimensional to three-dimensional growth. Phononless radiative recombination is observed from 〈105〉 faceted Ge quantum dots with height of approximately 0.9 nm and lateral width of 9 nm. Postgrowth annealing reveals a systematic blueshift of the Ge quantum dot's luminescence and a reduction in nonradiative recombination channels. With increasing annealing temperatures Si–Ge intermixing smears out the three-dimensional carrier localization around the dot. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430508
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Visual Sensitivity (1961)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Psychology 12 (1961), S. 311-334 
    Details
    ISSN: 0066-4308
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Psychology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ps.12.020161.001523
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  • 5
    Electronic Resource
    Electronic Resource
    Insecticides in Nature, Naturally Occurring Insecticides in Cruciferous Crops (1964)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 12 (1964), S. 158-161 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60132a017
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of malate and 2-oxoglutarate on the NIA transcript level and nitrate reductase activity in tobacco leaves (2001)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 24 (2001), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Nitrate assimilation in leaves requires synthesis of malate to counteract alkalinization, and synthesis of 2-oxoglutarate to act as an acceptor in the GOGAT pathway. We have investigated whether malate or 2-oxoglutarate regulate nitrate reductase (NIA, EC 1·6.6·1) expression. (i) Diurnal changes of NIA expression and organic acid levels were compared in tobacco leaves. The NIA transcript rose during the night and decreased during the day, and NIA activity rose to a maximum during the first 4 h of the light period and fell during the second part of the light period. Malate accumulated to high levels during the light period and decreased during the night. The 2-oxoglutarate increased by 40% at the beginning and decreased towards the end of the light period. The glutamine : 2-oxoglutarate ratio was steady during the first part of the light period and increased markedly during the second part of the light period. The diurnal changes of the NIA transcript level were inversely correlated to the diurnal changes of malate, and unrelated to the changes of 2-oxoglutarate or the glutamine : 2-oxoglutarate ratio. The decrease of NIA activity in the second part of the light period correlated with an increase of the glutamine : 2-oxoglutarate ratio. (ii) Leaves were detached 4 h into the light period and supplied with malate or 2-oxoglutarate via the petiole, to investigate their impact on the gradual decrease of the NIA transcript and NIA activity during the second part of the light period. Physiologically relevant changes of malate led to a further decrease of the NIA transcript level and a 27–60% decrease of NIA activity. A large increase of 2-oxoglutarate stabilized the NIA transcript level but had only slight effects on NIA activity. (iii) Plants were darkened for 16–24 h to reduce the NIA transcript level and NIA activity to low levels, and leaves were then detached and supplied with malate or 2-oxoglutarate for 4 h in the light to investigate their impact on the light-induction of NIA. The increase of the NIA transcript and NIA activity was antagonized by malate, and slightly accelerated by 2-oxoglutarate. (iv) Plants were placed in the dark for 60 h to reduce NIA activity to the limit of detection, and leaf discs were then incubated in the dark on sucrose to achieve a photosynthesis-independent increase of NIA activity. This was strongly inhibited by malate. (v) It is concluded that malate inhibits NIA expression, affecting both the NIA transcript level and NIA activity. Although the results are consistent with a role for 2-oxoglutarate in the regulation of NIA expression, the impact is less marked and no endogenous changes of 2-oxoglutarate were found that are likely to have a significant effect on NIA expression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3040.2001.00664.x
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  • 7
    Electronic Resource
    Electronic Resource
    Multi-colour organic light-emitting displays by solution processing (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 421 (2003), S. 829-833 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Organic light-emitting diodes (OLEDs) show promise for applications as high-quality self-emissive displays for portable devices such as cellular phones and personal organizers. Although monochrome operation is sufficient for some applications, the extension to multi-colour devices—such as ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature01390
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  • 8
    Electronic Resource
    Electronic Resource
    Zum Einfluß mechanischer Beanspruchungen auf die Supraleitungseigenschaften dünner Nb3Sn-Oberflächenschichten (1962)
    Springer
    The European physical journal 170 (1962), S. 154-161 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Zusammenfassung Niobdrähte mit Nb3Sn-Oberflächenschicht werden auf Zug und Torsion, Niobbänder mit Nb3Sn-Überzug durch Biegung und uniaxialen Druck beansprucht und in diesem Zustand auf ihre Supraleitungseigenschaften untersucht. In jedem Fall wird die Sprungtemperatur der Nb3Sn-Schicht durch die mechanische Beanspruchung erniedrigt. Das Verhalten im einzelnen hängt von den Herstellungsbedin-gungen der Nb3Sn-Schicht ab. Im Fall von Zug und Torsion wird ein annähernd parabolischer Zusammenhang zwischen Sprungpunktserniedrigung und mechanischer Beanspruchung gefunden.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01379526
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  • 9
    Electronic Resource
    Electronic Resource
    Präparation und Supraleitungseigenschaften von Zweikomponenten-Diffusionsschichten auf Niob und Vanadium (1964)
    Springer
    The European physical journal 179 (1964), S. 111-115 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Zusammenfassung Kurven kritischer Stromstärken von Zweikomponenten-Diffusionsschichten auf Niob mit Zinn als einer Komponenten in transversalen Magnetfeldern bis 90 kOe werden mitgeteilt. Im Gebiet hoher Feldstärken liegen die Kurven kritischer Stromstärken von Zweikomponenten-Diffusionsschichten mit verschiedenen Elementen (Al, In, Pb und Bi) als zweiter Komponente unterhalb der Kurven reiner Nb-Sn-Diffusionsschichten entsprechender Präparationsbedingungen, verlaufen jedoch unter sich und mit den Kurven reiner Nb-Sn-Schichten bei halblogarithmischer Darstellung ungefähr parallel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01381249
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  • 10
    Electronic Resource
    Electronic Resource
    Ophthalmodynamometrie Ein zuverlässiges Verfahren zur nicht-invasiven Bestimmung des Hirndrucks (2000)
    Springer
    Der Ophthalmologe 97 (2000), S. 860-862 
    Details
    ISSN: 1433-0423
    Keywords: Schlüsselwörter Ophthalmodynamometrie ; Intrakranieller Druck ; Zentralvenendruck ; Hirndruckmessung ; Keywords Ophthalmodynamometry ; Intracranial pressure ; Central retinal vein pressure ; Intracranial pressure measurement ; Venous outflow pressure
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Abstract Background. Central vein pressure depends on intracranial pressure (ICP). Baurmann in 1925 therefore recommended measuring central vein pressure to determine ICP, but the accuracy of this method has not yet been verified. To test the method we measured venous outflow pressure (VOP) by noninvasive ophthalmodynamometry (ODM). Methods and materials. We studied 31 patients with suspected increased ICP. ICP was recorded continuously for a minimum of 24 h by intraventricular catheters, and ODM was performed during ICP measurement. The findings were compared with the results of conventional invasive ICP measurement. Results. Pressure in the central retinal vein was highly correlated with ICP. Conclusion. Measuring VOP by ODM seems to be a reliable method for noninvasive recording of ICP. It is a useful screening test in all cases of presumed ICP elevation.
    Notes: Zusammenfassung Hintergrund. Der Zentralvenendruck ist abhängig vom intrakraniellen Druck. Baurmann empfahl deshalb 1925 die Messung des Zentralvenendrucks, um die Höhe des intrakraniellen Drucks zu bestimmen. Bislang ist diese Überlegung aber noch nicht verifiziert worden. Wir haben den “Venous outflow pressure” (VOP) mittels Ophthalmodynamometrie (ODM) bestimmt und die Befunde mit den Ergebnissen der konventionellen Hirndruckmessung verglichen. Patienten und Methodik. In die Studie wurden 31 Patienten mit Verdacht auf Hirndruckerhöhung aufgenommen. Bei allen Patienten wurde der intrakranielle Druck wenigstens 24 h über einen intraventrikulären Katheter erfasst. Während dieser Zeit erfolgte zusätzlich eine Bestimmung des VOP mittels Ophthalmodynamometrie. Ergebnisse. Der VOP korreliert eng mit dem intrakraniellen Druck. Schlussfolgerung. Die Messung des VOP mittels ODM ist nach den Ergebnissen unserer Studie ein zuverlässiges Verfahren, auf nichtinvasivem Wege den intrakraniellen Druck zu bestimmen, und somit eine geeignete Screeningmethode bei Verdacht auf Hirndruckerhöhung.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003470070009
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