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  • 2000-2004  (545)
  • 1915-1919  (93)
  • 1880-1889  (342)
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Year
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  • 11
    Electronic Resource
    Electronic Resource
    Weinheim : Wiley-Blackwell
    Berichte der deutschen chemischen Gesellschaft 52 (1919), S. 1249-1255 
    ISSN: 0365-9631
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 12
    Unknown
    Oxford [England] ; New York : Oxford University Press
    American classical studies  
    Keywords: Greece, History, To 146 B.C. ; Grèce, Histoire, Jusqu'à 146 av. J.-C. ; Rome, Histoire. ; Rome, History. ; Civilisation ancienne. ; Civilization, Classical.
    Pages: xi, 151 p.
    ISBN: 0-19-518490-4
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  • 13
    Unknown
    Cambridge, UK ; New York : Cambridge University Press
    Keywords: Organizational effectiveness, Measurement. ; Performance, Measurement. ; Total quality management.
    Notes: Why are performance measures so bad? -- Running down of performance measures -- In search of balance -- From cost drivers to revenue drivers -- Learning from ABPA -- Managing and strategizing with ABPA
    Pages: xiv, 202 p.
    ISBN: 0-511-06463-2
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  • 14
    Unknown
    Grand Rapids, Mich : Christian Classics Ethereal Library
    Keywords: Bible, Commentaries. ; English literature., lcsh
    ISBN: 0-585-03551-2
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  • 15
    Unknown
    Grand Rapids, Mich : Christian Classics Ethereal Library
    Keywords: Christian life, Baptist authors. ; English literature., lcsh
    ISBN: 0-585-07474-7
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  • 16
    Unknown
    Oxford ; New York : Oxford University Press
    Keywords: Mouvements sociaux. ; Social movements.
    Notes: pt. I. Introduction. Opportunities and identities: bridge-building in the study of social movements / David S. Meyer -- pt. II. States and policies. State repression and democracy protest in three southeast Asian countries / Vincent Boudreau -- Mobilization on the South African gold mines / T. Dunbar Moodie -- Multiple meditations: the state and the women's movements in India / Manisha Desai -- The contradictions of gay ethnicity: forging identity in Vermont / Mary Bernstein -- Creating social change: lessons from the civil rights movement / Kenneth T. Andrews -- pt. III. Organization and strategies. The "meso" in social movement research / Suzanne Staggenborg -- Strategizing and the sense of context: reflections on the first two weeks of the Liverpool docks lockout, September-October 1995 / Colin Barker and Michael Lavalette -- Factions and the continuity of political challengers / Mildred A. Schwartz -- More than one feminism: organizational structure and the construction of collective identity / Jo Reger -- The development of individual identity and consciousness among movements of the left and right / Rebecca E. Klatch -- pt. IV. Collective identities, discourse, and culture. Toward a more dialogic analysis of social movement culture / Marc W. Steinberg -- Materialist feminist discourse analysis and social movement research: mapping the changing context for "community control" / Nancy A. Naples -- From the "beloved community" to "family values": religious language, symbolic repertoires, and democratic culture / Rhys H. Williams -- External political change, collective identities, and participation in social movement organizations / Belinda Robnett -- pt. V. Conclusion. Meaning and structure in social movements / Nancy Whittier
    Pages: xvi, 366 p.
    ISBN: 0-19-530277-X
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5815-5875 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5533-5542 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we have investigated the Schottky barrier heights on n- and p-type Si1−x−yGexCy alloys with Zr, Ti, W, Ni and Pt as metals (ΦBn and ΦBp, respectively). Contacts on Si1−xGex alloys showed various behaviors depending on the metal work function Φm. For low-Φm metals (Zr, Ti), ΦBn increases with x, while ΦBp(x) decreases. For higher Φm metals (Pt), ΦBn strongly decreases with x. In the particular case of W (intermediate Φm value), ΦBp follows exactly the decrease of the SiGe band gap with x, while ΦBn remains constant. Nevertheless, whatever the metal, the reduction of the sum ΦBn+ΦBp gives the band-gap variation as a function of x, and the Fermi level is located at the same position for both n and p-type layers. A weaker effect of Φm on the Schottky barrier heights is observed compared to pure Si: the position of the Fermi level tends to remain in the range 0.60–0.65 eV below the conduction band, as soon as Ge is adding in Si. W contacts on Si1−x−yGexCy alloys evidenced the strong effect of C on ΦBn and ΦBp. The variations of ΦBn(y) or ΦBp(y) cannot be correlated to the band gap. In addition, the position of the Fermi level at the interface depends on the type of the alloy. Nevertheless, as in the case of the binary alloy SiGe, a weaker dependence on Φm compared to that observed for pure Si is shown. High values of the ideality factor with increasing the C content may evidence the presence of interfacial inhomogeneities, which could be correlated to C short range order. The present results have been compared to existing published results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2166-2168 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that small in-plane magnetization components in magnetic garnet films with perpendicular anisotropy can be imaged using nonlinear magneto-optical proximal probe microscopy, i.e., magnetization-induced second harmonic generation together with a scanning near-field optical microscope. A relationship exists between the in-plane magnetization domains we observed and the typical maze-like out-of-plane magnetization domains that are simultaneously imaged recording the linear Faraday effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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