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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3847-3854 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed systematic study on the growth morphology of carbon nanotubes (CNTs) on Si in atmospheric pressure thermal chemical vapor deposition was undertaken. The role of NH3 for vertical alignment of CNTs was investigated. The direct cause for the alignment was a dense distribution of the catalytic metal particles, but that the particles are maintained catalytically active under amorphous carbon deposits was established by NH3. It allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grew in a base growth mode. Since Ni is consumed both by silicide reaction and by capture into the growing tube, the growth stops when Ni is totally depleted. It occurs earlier for smaller particles, and thus a long time of growth results in a thin bottom with poor adhesion. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5811-5814 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence spectra show dominant sharp excitonic emission whose peak position systematically shifts to the higher energy side with decreasing the well thickness. Photoluminescence excitation spectra show optical transitions between excited quantum levels in addition to the ground levels. The standard analysis based on the effective-mass approximation gives the valence band offset of ΔEυ=(0.4±0.1)ΔEg. This is consistent with calculated values based on Harrison's linear combination of atomic orbitals theory. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Recent etiological study in twins (Tanner et al. 1999) strongly suggests that environmental factors play an important role in typical, non-familial Parkinson's disease (PD), beginning after age 50. Epidemiological risk factor analyses of typical PD cases have identified several neurotoxicants, including MPP+ (the active metabolite of MPTP), paraquat, dieldrin, manganese and salsolinol. Here, we tested the hypothesis that these neurotoxic agents might induce cell death in our nigral dopaminergic cell line, SN4741 (Son et al. 1999) through a common molecular mechanism. Our initial experiments revealed that treatment with both MPP+ and the other PD-related neurotoxicants induced apoptotic cell death in SN4741 cells, following initial increases of H2O2-related ROS activity and subsequent activation of JNK1/2 MAP kinases. Moreover, we have demonstrated that during dopaminergic cell death cascades, MPP+, the neurotoxicants and an oxidant, H2O2 equally induce the ROS-dependent events. Remarkably, the oxidant treatment alone induced similar sequential molecular events: ROS increase, activation of JNK MAP kinases, activation of the PITSLRE kinase, p110, by both Caspase-1 and Caspase-3-like activities and apoptotic cell death. Pharmacological intervention using the combination of the antioxidant Trolox and a pan-caspase inhibitor Boc-(Asp)-fmk (BAF) exerted significant neuroprotection against ROS-induced dopaminergic cell death. Finally, the high throughput cDNA microarray screening using the current model identified downstream response genes, such as heme oxygenase-1, a constituent of Lewy bodies, that can be the useful biomarkers to monitor the pathological conditions of dopaminergic neurons under neurotoxic insult.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8259-8263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a vertically aligned 4-domain nematic liquid crystal display cell with thin film transistor. Unlike the conventional method constructing 4-domain, i.e., protrusion and surrounding electrode which needs additional processes, in this study the pixel design forming 4-domain with interdigital electrodes is suggested. In the device, one pixel is divided into two parts. One part has a horizontal electric field in the vertical direction and the other part has a horizontal one in the horizontal direction. Such fields in the horizontal and vertical direction drive the liquid crystal director to tilt down in four directions. In this article, the electro-optic characteristics of cells with 2 and 4 domain have been studied. The device with 4 domain shows faster response time than normal twisted-nematic and in-plane switching cells, wide viewing angle with optical compensation film, and more stable color characteristics than 2-domain vertical alignment cell with similar structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2064-2066 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of systematic investigation of impurities in dielectrics and hydrogen barriers (Ti and Al2O3 films) during the integration process of SrBi2Ta2O9-based ferroelectric memories. The capacitors integrated with Ti hydrogen barriers are not electrically degraded regardless of the annealing conditions of the subdielectrics. On the contrary, electrical properties of the capacitors using Al2O3 hydrogen barriers significantly depend on the annealing temperatures for subdielectrics. It turned out that interaction of the dielectrics with plasma during sputtering of the Ti films caused fragmentation of the moisture in the dielectrics and absorption of the hydrogen in the Ti films, making annealing irrelevant. However, the alumina films blocked both hydrogen and moisture in the subdielectrics during the passivation process, resulting in dependence on the annealing temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1372-1374 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a hydrogen barrier necessary for a conventional passivation process of integrated SrBi2Ta2O9 (SBT)-based memories. The passivation process significantly degraded electrical properties of the memories, resulting from hydrogen damage in the SBT capacitors. Metallic films (Ti, TiN, and Al) were investigated as a hydrogen barrier during the passivation process. The Ti(〉500 Å) hydrogen barrier only showed the electrical properties of memories free from hydrogen damage. The formation of stable hydrides and the suppressed diffusion of hydrogen through the Ti films during the passivation processes resulted in sufficient switching polarization, low leakage current, and good reliabilities at high temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3761-3763 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 eV, which corresponds to exciton emission bound to a Ga donor. To avoid degradation of the PL intensity, the maximum dopability of Ga in ZnO is determined to be around 2.6×1019/cm3. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 82-84 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the origin of hexagonal-shaped etch pits generally observed by conventional wet etching processes on (0001) GaN-based films based on the investigation with transmission electron microscopy on GaN films after being etched with molten KOH. The origin of hexagonal-shaped etch pits is identified as nanopipes through careful characterization of abnormal contrast of nanopipe (open-core screw dislocation), "lobe contrast" of end-on edge and screw (full-core) dislocations, visible and invisible conditions of edge and screw dislocations. Consideration of energetics of these defects also suggests preferential etch pit formation at nanopipes because of much higher energy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 68 (2003), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Oxygen permeation characteristics of whey protein isolate (WPI) coatings on polypropylene (PP) films were investigated to examine the feasibility of WPI coating as a novel biopolymer oxygen barrier for food packaging applications. Heat-denatured aqueous solutions of WPI with several plasticizers including glycerol, sorbitol, sucrose, propylene glycol, and polyethylene glycol were applied on the surfaces of PP films previously treated with corona discharge. Among plasticizers used, sucrose conferred the best oxygen barrier property to the WPI-coated films. Oxygen permeability (OP) of the resulting WPI-coated films increased significantly with temperature, showing very good agreement with the Arrhenius model. OP of the coated films also increased exponentially with relative humidity.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Munksgaard International Publishers
    Allergy 57 (2002), S. 0 
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
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