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  • 1995-1999  (34)
  • 1990-1994  (57)
  • 1950-1954  (4)
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 963-970 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We used mass spectrometric techniques in conjunction with the ion deflection method to determine the kinetic energies of Cn+ fragment ions (58≥n≥4) produced by controlled electron impact on C60 under single collision conditions. The recorded ion beam profiles for the various fragment ions were analyzed using two independent methods. One method extracts the average kinetic energy of the fragment ion under study from the measured half-width of the ion beam profile (half-width method), whereas the second method analyzes the entire measured beam profile (profile method). For each Cn+ fragment ion, the kinetic energies obtained were interpreted assuming two possible formation pathways, (i) the fission of the excited parent C60+ ion in a single-step, two-fragment break-up, C60+→Cn++C60−n and (ii) the sequential decay of excited C60+ into Cn+ via the successive removal of Cm units (m=1, 2, or 3). Both the half-width method and the profile method yield very similar results for the kinetic energies of the Cn+ fragment ions for both formation mechanisms, viz., an average kinetic energy of roughly 0.45 eV in the case of the single-step fission and a linearly increasing average kinetic energy from 0.43 eV for the formation of C58+ to roughly 12 eV for the formation of C4+ in case of the sequential decay mechanism (in this case an essentially constant energy of also about 0.45 eV was obtained for the last fragmentation step in each case, which was confirmed by a third method using a fitting procedure). These results will be discussed in the context of the most likely fragmentation mechanism leading to the formation of the various fragment ions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 5626-5630 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report measurements of the absolute cross sections for the electron-impact ionization of the NF2 and NF free radicals from threshold to 200 eV. At 70 eV, the absolute parent NF2 and NF ionization cross section are 1.25±0.23 A(ring)2 and 1.05±0.19 A(ring)2, respectively. We found little evidence of the presence of vibrationally excited radicals in the incident target beam for both NF2 and NF. We also studied the dissociative ionization of NF2 and NF. The absolute cross section for the formation of the NF+ fragment ions from NF2 was found to be 0.75±0.15 A(ring)2 at 70 eV. The NF+ fragment ions are formed with little excess kinetic energy. The only significant pathway leading to the observed NF+ fragment ions is the single positive ion formation. Our data show no indication of the presence of double positive ion formation channels or positive–negative ion pair formation processes. Cross sections for the formation of the atomic fragment ions F+ and N+ from both NF2 as well as NF were found to be small with maximum values of less than 0.1 A(ring)2 at 70 eV in all cases.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 211-218 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report measurements of the absolute cross sections for the electron-impact ionization of SO2 from threshold to 200 eV. Absolute cross sections for the formation of the SO+2 parent ions and of the SO+, S+, O+, and O+2 fragment ions were obtained independently in two different laboratories using two different experimental techniques with uncertainties ranging from ±18% to ±25%. The level of agreement between the absolute cross sections (at 70 eV) obtained by the two techniques ranges from about 10% for SO+2 and SO+ to 20% for (S++O+2) and O+, which in all cases is well within the combined error margins of the two measurements. The high resolution capability of the mass spectrometer employed in one experiment enabled the separation of the S+ and O+2 fragment ions, which are separated by only 0.017 76 atomic mass units (amu), for the first time. The single positive ion formation is the dominant process for all observed product ions. The total single SO2 ionization cross section obtained by the two techniques agreed to within 8%. A comparison of the experimentally determined total SO2 single ionization cross sections with calculated cross sections based on a modified additivity rule revealed agreement to within 20%. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2177-2179 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper reports the successful design, fabrication, and testing of several side-cooled silicon and SiC (graphite) synchrotron mirrors (flat, spherical, and cylindrical) with a length of up to 1200 mm. The mirrors are equipped with support structures which allow the mirrors to be bent meridionally to cylinders with radii from infinity to 5000 m. Detailed metrology results are presented for the mirrors and the bending system. All mirrors will be installed at ESRF beamlines 8, 15, and 19. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7203-7206 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical emission spectrum in the spectral region 200–800 nm produced by electron impact on tetra-ethoxysilane (TEOS) under controlled single-collision conditions is analyzed. Absolute emission cross sections (at an impact energy of 100 eV) of 0.7±0.2×10−20 cm2 for the Si (3p4s 1P0→3p2 1S) line at 390.6 nm, 2.4±0.5×10−20 cm2 for the CH(A 2Δ→X 2Π) band centered around 430 nm, and cross sections below 0.5×10−20 cm2 for the hydrogen Balmer-α, -β, and -γ lines at, respectively, 656.4, 486.1, and 434.0 nm are measured. Comparatively high onset energies of 56.2±2.0 eV (Si) and 30.7±2.0 eV (CH) were found which when combined with the small cross sections indicate that the single-step dissociative excitation of TEOS by electron impact cannot be expected to play a major role in the collision processes that dominate the plasma chemistry of TEOS-containing processing plasmas.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 1420-1423 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Most of the recently established synchrotron beam lines need optical components which are able to withstand high total heat loads. High beam power densities have to be tolerated without decreasing the optical quality. New mirror materials such as SiC and Si have been introduced into the optics manufacturer's workshop, being in principle ideal for high quality optical surfaces. On the other hand, they are causing new problems resulting mainly from inherent material properties. Several possibilities of manufacturing mirrors for high intensity beam lines are discussed in this paper and related problems and possible solutions shown. Special remark is made on mirrors manufactured from a graphite core with chemical vapor deposition-SiC coating.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 341-350 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We studied the emission of the fluorine (2p43s) 2,4P→(2p5) 2P resonance lines in the vacuum ultraviolet (VUV) at 95.5 and 97.5 nm, respectively, following dissociative excitation of SF6, CF4, NF3, and CCl2F2 by controlled electron impact under single collision conditions. Absolute photoemission cross sections and appearance potentials have been determined for the 95.5 nm 2P→2P multiplets for all four target gases. The apparent cross sections, which include cascade contribution from higher states, were measured to range from 2 to 5×10−18 cm2 at 200 eV impact energy. The cross sections were found to be heavily influenced by 3p→3s cascading with contributions ranging from 30% (SF6) to 75% (CF4). Subtraction of the cascade contributions yielded direct cross sections of 0.5× 10−18 cm2 (CF4), 1.4×10−18 cm2 (CCl2F2), 1.5×10−18 cm2 (SF6), and 2.9×10−18 cm2 (NF3) at 200 eV. The fluorine emissions are the result of the total fragmentation of the parent molecule for the targets SF6, CF4, and NF3. A much lower appearance potential and a different energy dependence of the cross section in the case of CCl2F2 indicates that partial fragmentation of this molecule plays a very important role. The findings for the 97.5 nm 4P→2P multiplet were essentially similar to those for the 2P→2P multiplet with the exception that accurate apparent emission cross sections could not be determined from a measurement of the 97.5 nm photon emission intensity. Due to their longer lifetime an appreciable fraction of the excited fluorine (2p43s) 4P atoms was found to drift out of the viewing area of our detection system before decaying radiatively. An attempt was made to extrapolate values for the 97.5 nm 4P→2P cross sections at 200 eV from a detailed analysis of the near-threshold region of the cross section for SF6, CF4, and NF3 This approach yielded FI 4P →2P cross sections comparable in magnitude to the FI 2P→2P cross sections.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7868-7874 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report absolute partial electron-impact ionization cross sections from threshold to 200 eV for the formation of the parent CFx+ ions from the CFx free radicals (x=1–3). Fast (3–3.5 kV) beams of CF3, CF2, and CF radicals were prepared by near-resonant charge transfer of CF3+, CF2+, and CF+ with triethylamine (TEA), Xe, and NF3. The CF and CF3 neutral beams were found to contain primarily ground state neutral radicals with some evidence for the presence of a small amount of vibrational excitation (0.5 eV or less). Contributions to the CF2+ ion signal obtained at electron energies several electron volts below the 11.4 eV threshold for the ionization of ground state CF2 radicals indicate the presence of CF2 metastables (presumably in the 3B1 state) in the CF2 neutral beam. The level of CF2 metastable contamination was found to depend critically on the exact experimental conditions. At 70 eV, the absolute parent ionization cross sections are 0.38±0.07 A(ring)2 (CF3→CF3+), 1.03±0.16 A(ring)2 (CF2→CF2+), and 1.25±0.19 A(ring)2 (CF→CF+), respectively.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 2390-2394 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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