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  • 1995-1999  (3)
  • 1990-1994  (8)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7372-7374 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the phase-matching temperature for second harmonic generation (SHG) of 1064-nm radiation on Li/Nb and Li/Mg ratios in MgO-doped lithium niobate crystals was investigated. Crystals studied were grown from melts with 0, 1, 2, and 5 mol % MgO and were equilibrated to different Li contents through a vapor-phase-transport process. Crystals with no MgO doping, equilibrated to the Li-rich phase boundary, had the highest phase-matching temperature. At room temperature (25.5 °C), this material phase-matched for SHG of 978.4-nm radiation to generate blue light.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5552-5554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850 °C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials comprising the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand, As-charged graphite holders did not stick and worked well under our bonding conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6213-6217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoelectric properties of CoP3 and CeFe4P12 have been measured. These compounds were synthesized by a flux technique using Sn as the solvent. The samples were characterized by x-ray diffractometry and electron microprobe analyses. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured over a wide range of temperatures. The results indicate that CoP3 and CeFe4P12 are semiconductors, in agreement with theoretical predictions. The thermal conductivity of CeFe4P12 is about 10 times larger than that for CeFe4Sb12 which is primarily due to both reduced motion of the Ce ions in smaller voids and lower hole–phonon scattering. The results are analyzed and discussed to provide guidelines for optimization of the thermoelectric properties of these materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1024-1028 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical pyrometer has been developed which resolves 20 μm at a working distance of 24 in. and measures relative temperature differences of ±2 °C over the range 1000–2000 °C. The instrument is particularly suitable for measuring temperature or emissivity distributions in very small heated objects.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3026-3028 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of plasma-generated monatomic hydrogen into a wide-band-gap II-VI zincblende semiconductor (e.g. ZnSe) has been achieved by using a deposited layer of silicon dioxide as a hydrogen-permeable encapsulation to prevent decomposition (etching) of the semiconductor during hydrogenation. Depth profiles from secondary-ion mass spectrometry demonstrate deuterium penetration into ZnSe layers epitaxially grown on GaAs. Low-temperature photoluminescence reveals that the commonly observed donor-acceptor pair transitions are selectively removed by hydrogenation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2583-2590 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) have been used to study the polar (111)Cd and (111)Te surfaces of intrinsic CdTe crystals. Complementary information on surface composition, chemical state of the surface elements, and surface structure was obtained. The Auger parameters were used to identify the chemical states of elements on surfaces of semi-insulating undoped CdTe crystals which suffered from static charging effects. With this approach, we were able to determine that after chem-mechanical polishing, the Te-rich surface layer was mostly in the pure Te state. Only a trace amount of TeO2 was detectable. Sputtered and vacuum annealed (111) surfaces were found to be stoichiometric: both Cd and Te were in the chemical state of CdTe. Both (111) Cd and (111) Te surfaces showed sixfold symmetric LEED patterns. No evidence of surface reconstruction was found. Angle-resolved XPS showed no significant difference between 0° and 70° tilt on either the (111) Cd or (111) Te surfaces. Angle-resolved AES, however, showed significant differences between (111) Cd and (111) Te at 0° and 70° tilt, and the crystallographic polarity identified this way was consistent with results based on chemical etching and standard AES techniques, and with reported results of x-ray diffraction and transmission electron microscopy.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5282-5284 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The prospect of temperature tunability in an AgGaSe2 crystal for use in infrared nonlinear optics is explored for the first time. Tunable second harmonic generation from CO2 laser radiation is studied at different temperatures of the crystal. The tuning offered is small and the experimental finding is consistent with dispersion measurement.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 72-77 
    ISSN: 1600-5740
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Pb5Al3F19 at 160 K is ferroelectric, crystallizing in the tetragonal system. With Mr = 1477.9, the space group is I4cm and a = 14.07 (2), c = 7.30 (1) Å, V = 1445 (3) Å3, Z = 4, Dx = 6.793 Mg m−3. For λ(Mo Kα) = 0.71073 Å, μ = 56.36 mm−1. F(000) = 2480 Pb5Al3F19 undergoes a first-order phase transition on cooling at 120 K and on heating at 270 K. The structure was determined from 656 independent F(hkl) with I〉 3σ(I) and refined by least squares to R = 0.0527, wR = 0.0480, S = 1.065. No atom is further than 0.83 Å, from the hypothetical I4/mcm atomic positions, hence the crystal is structurally ferroelectric. The mean atomic polar displacement of the two independent Al atoms from the zero spontaneous-polarization location, allowing for the F atoms, is 0.207 (28) Å, which leads to a predicted Tc = 860 (230) K. Several additional phase transitions are known to form before the hypothetical phase is attained. Each independent Al atom occupies a fluorine octahedron with average Al—F distance either 1.818 (5) or 1.824 (1) Å. One Pb atom is nine coordinated, occupying a distorted tricapped trigonal prism with average Pb—F = 2.66 (22) Å. The other is ten coordinated, forming a distorted bicapped cuboid, with average Pb—F = 2.61 (28) Å. Pyroelectric pulses are readily detectable in crystals cooled below 120 K, or subsequently on heating to 270 K. Similarly, numerous piezoelectric resonances are observed in the same thermal ranges; the compression mode at 1̃197 kHz has been identified by its characteristic admittance circle. The mechanical quality factor Qm for ferroelectric Pb5Al3F19, determined from the admittance-circle-derived equivalent circuit, is 4̃23.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1432-0649
    Keywords: 42.65K ; 7.62 ; 86.70f
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Tangential near-noncritical phase matching is reported for upconversion in silver thiogallate (AgGaS2) using a dye laser as pump. A large acceptance angle for noncollinearity as desirable from a device view point is realised. Weak temperature tunability is also exploited to realise noncriticality.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 10 (1991), S. 1428-1429 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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