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  • 1
    Electronic Resource
    Electronic Resource
    Luminescence and electron paramagnetic resonance studies of white-light emitting SrS: Pr, F thin film electroluminescent devices (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1754-1757 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorescence emission and excitation spectra of white-light emitting SrS: Pr, F thin film electroluminescent devices have been investigated. It was determined from the results obtained that the dominant electroluminescence mechanism was that the ionization of Pr3+ centers occurs first, then subsequently recombination with electrons occurs, and finally Pr3+ center transitions give rise to luminescence. The emission mechanism of SrS: Pr, F seems to be the same as that of a SrS: Pr, K electroluminescent device, except for the appearance of strong peaks around 610–670 nm. The impurity excitation peak in the lower excitation energy, longer-wavelength region in the FL spectrum may be an important factor for the selection of an effective white-light emitting EL material. The electron paramagnetic resonance experiment of SrS: Pr, F was performed on powder and thin film specimens. The hyperfine structure of an isolated Mn2+ ion was observed in this SrS: Pr, F thin film. This Mn center which was substituted for Sr, seems to contribute to the strong red emission in the white EL spectrum.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356366
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  • 2
    Electronic Resource
    Electronic Resource
    Photoresponse of a YBa2Cu3Ox grain-boundary junction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3770-3773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoresponse of a YBa2Cu3Ox grain-boundary junction has been measured as a function of chopping frequency and bias current in a temperature range of 2 K≤T≤70 K. The response was found to be mostly bolometric, but a nonbolometriclike component was also identified, which appeared as a chopping-frequency independent signal while immersing the sample in the superfluid helium. The bias-current dependence of the response showed a peak at a current corresponding to the critical current of the junction, and the peak values remained constant for 30 K≤T≤70 K. However, below 15 K the peak of the photoresponse increased very sharply with decreasing temperature following a 1/T3 dependence, consistent with the temperature dependence of the thermal boundary resistance between the film and the substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361380
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  • 3
    Electronic Resource
    Electronic Resource
    Resistive measurement of the temperature dependence of the penetration depth of Nb in Nb/AlOx/Nb Josephson junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8163-8167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the penetration depth of Nb films was determined from resistive transitions of Nb/AlOx/Nb Josephson junctions in a constant magnetic field applied parallel to the junction planes. Distinct resistance peaks were observed as temperature decreases and those peaks were found to appear when the total flux threading the junction equals an integral multiple of the flux quantum. From this condition, the penetration depth at those peak positions has been determined. The temperature dependence was well described by either the dirty local limit or the two-fluid model. This method can be useful for a highly fluctuating system such as high-temperature superconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356515
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of an interlayer on the emission characteristics of a white-light-emitting electroluminescent device with a Pr and Ce doubly doped ZnS phosphor layer (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8717-8724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated light-emission characteristics of a white-light-emitting electroluminescent device with a doubly doped ZnS:Pr,Ce,F phosphor layer. We found that optimum codoping of Ce enhances the emission characteristics compared to the electroluminescent device with a singly doped ZnS:Pr,F layer. We also found that introducing an additional thin-insulating SixNy interlayer between the lower insulating layer and the phosphor layer significantly stabilizes the aging characteristics and improves the luminous efficiency. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362498
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  • 5
    Electronic Resource
    Electronic Resource
    Nanocrystalline Nd12Fe80B6Nb1Ga1 melt-spun ribbon with textured surface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4756-4758 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Nd-Fe-B melt-spun ribbon, Ga addition is found to be effective for the orientation of c axis of 2-14-1 grains normal to the ribbon plane even at high wheel surface velocity. A Nd12Fe80B6Nb1Ga1 melt-spun ribbon quenched with optimum wheel surface velocity was found to have textured structure on the free-side surface. Furthermore, this melt-spun ribbon was composed of fine grains of about 30 nm in size which is believed to be enough to provoke intergrain exchange interaction. The remanence and energy product of the field aligned powder of this melt-spun ribbon was about 7% and 20% higher than those of the not-aligned powder, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355904
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  • 6
    Electronic Resource
    Electronic Resource
    Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent device (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4253-4257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed a decrease of the number of effective emission centers Mn2+ in the aged ZnS:Mn electroluminescence (EL) devices compared to the fresh EL devices using the electron-paramagnetic-resonance technique. Such phenomena can take place during the operation of the EL device, since the isolated Mn can easily diffuse into another site and forming cluster. Another possible explanation is that Mn2+ changes into Mn1+ or Mn3+ by transferring the electronic charge of the isolated Mn2+ to the neighboring Mn ions via sulfur and/or sulfur vacancy. As a result, luminance is lowered due to the decrease in the number of efficient emission centers of isolated Mn2+. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359887
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  • 7
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of BaTiO3 thin films and their optical properties (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1803-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented a-axis BaTiO3 thin films were grown by pulsed laser deposition on (001) MgO substrates. The full width at half-maximum of the (200) BaTiO3 rocking curve was as narrow as 0.6°. A large hysteretic quadratic electro-optic effect was observed in a transverse geometry at 6328 A(ring). A birefringence shift up to 3×10−3 was measured at an applied dc electric field of 1 kV/mm. It was found that laser repetition rate plays an important role on the surface morphology of the deposited films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115064
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  • 8
    Electronic Resource
    Electronic Resource
    Spin reorientation in (Pr,RE)–(Co,TM)–B magnets (RE=Tb,TM=Fe,Cr,Mn) : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7124-7126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Small substitutions of Pr with Tb and Co with Fe, Cr, Mn were used to increase the spin reorientation temperature of the Pr2Co14B compound which is around 395 °C. Spin reorientation temperatures were obtained by measuring magnetization vs temperature curves at temperatures up to 750 °C. Several ribbons with high spin reorientation temperature were fabricated by melt-spinning and they were annealed in the temperature at 600–700 °C to obtain the optimum coercivity. Our results show that spin reorientation temperature is sharply increased with Fe substitution and reaches a maximum (575 °C) in the sample with 25% Fe substituted for Co. Small amounts of Tb, Cr, and Mn are effective in increasing the spin reorientation temperature. The optimum coercivities of ribbons are in the range of 7–10.5 kOe and ribbons with high spin reorientation temperature show an improved temperature dependence of coercivity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367714
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  • 9
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of VO2 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3188-3190 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality vanadium dioxide (VO2) thin films have been successfully deposited by pulsed laser deposition without postannealing on (0001) and (101¯0) sapphire substrates. X-ray diffraction reveals that the films are highly oriented with (010) planes parallel to the surface of the substrate. VO2 thin films on (0001) and (101¯0) substrates show semiconductor to metal transistions with electrical resistance changes as large as 4×104, 105, respectively. Thin films on (101¯0) substrate have a transition at as low as 55 °C with a hysteresis less than 1 °C. These transition properties are comparable with single crystal VO2. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112476
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  • 10
    Electronic Resource
    Electronic Resource
    Effective electric field in dc magnetization measurements: Comparing magnetization to transport critical currents (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2153-2155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report values of critical current (Jc) for Tl2Ba2CaCu2Ox(Tl-2212) epitaxial thin films in magnetic fields up to 5 T and at temperatures of 5, 40, and 77 K determined from dc magnetization and using a standard transport technique. Although we verify the applicability of Bean's model [Rev. Mod. Phys. 36, 31 (1964)], these values only agree at small applied magnetic fields and at low temperatures. Our results indicate that the differences observed in Jc's determined from the two techniques may be understood by considering only the field-dependent, nonlinear E-J characteristic and the "effective'' electric-field criterion used in determining Jc.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107067
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