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  • 1
    Electronic Resource
    Electronic Resource
    Electronic properties of silicon δ-doped InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 671-675 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated magneto-transport and cyclotron resonance (CR) of two-dimensional electron gas in silicon δ-doped p-InSb under a magnetic field of up to 12 T at 4.2 K. Because there are multiple subbands occupied, Shubnikov–de Haas oscillations show a beating behavior. The CR spectra also display several peaks originating from different subbands. Effective masses of electrons associated with the lowest three subbands can therefore be directly determined, and they are in excellent agreement with a self-consistent calculation, which takes into account the electrostatic Poisson equation, the Schrödinger equation, and realistic sample parameters. Furthermore, we observed an absorption peak, whose resonance position has anomalous angle dependence. It is attributed to impurity CR where donors are in the vicinity of the δ-doped sheet.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351850
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  • 2
    Electronic Resource
    Electronic Resource
    Comment on: "The effect of charge state on the local vibrational mode absorption of the carbon acceptor in semi-insulating GaAs'' (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6731-6732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A recent study of the effect of photoquenching of EL2 on the compensation of carbon acceptors in GaAs and the resulting effect on the carbon local vibrational mode, LVM, concluded that there was no broadening of the LVM associated with bound holes on neutral carbon acceptors. The failure to observe broadening of the LVM in this study was a result of the failure to neutralize a significant fraction of the carbon atoms by photoquenching EL2. We show that, in the experiment reported, at most only about 3%–4% of the carbon acceptors were neutralized. Such very small modifications of the ionized carbon concentration are unobservable in the LVM spectra unless the spectral stability and signal-to-noise ratio are exceptional.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348898
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  • 3
    Electronic Resource
    Electronic Resource
    Identification and activation energies of shallow donors in cubic SiC (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1805-1809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon carbide grown by the chemical vapor deposition process on silicon often contains high concentrations of nitrogen donors with a binding energy of 54 meV as determined from photoluminescence studies. In contrast, the conductivity in the same samples is dominated by a heavily compensated shallow donor with a binding energy below 20 meV. The conventional view is that these two donors are the same. The 54 meV donors usually are assumed to be isolated substitutional nitrogen in regions of low concentration while the 〈20 meV donors are believed to be nitrogen in regions of high concentration. The most convincing evidence for this identification is the continuum of binding energies from 50 to 15 meV for SiC as a function of donor concentration compiled from published results. Evidence for reassessing the conventional view is given in this article and several experiments supporting the conventional view are reconsidered. As a result of this reconsideration, we propose that the donors below 20 meV which dominate the conductivity are not neutral, substitutional nitrogen in high concentration but some other center. D− centers and donor complexes are possible origins of this donor. The D− center appears to have many of the characteristics required for satisfactory modeling of this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354785
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6632-6635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission spectra of GaSb have been obtained over a temperature range from 10 to 470 °C. Using this information, transmission thermometry is applied to obtain accurate measurements of sample temperature during molecular beam epitaxy growth on GaSb substrates. A GaSb surface reconstruction transition is determined as a function of Sb flux and substrate temperature, establishing a laboratory-independent temperature standard. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370290
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of the Quisqualate Receptor Linked to Phosphoinositide Hydrolysis in Neurocortical Cultures (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 54 (1990), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Activation of phosphoinositide metabolism is an early event in signal transduction for a number of neurotransmitters and hormones. In primary cultures of rat neurocortical cells, various excitatory amino acids stimulate inositol phosphate production with a rank order of potency of quisqualate 〉 ibotenate 〉 glutamate 〉 kainate, N-methyl-d-aspartate 〉 α-amino-3-hydroxyl-5-methyl-4-isoxazole propionate. This response to excitatory amino acids was insensitive to a variety of excitatory amino acid antagonists including 6-cyano-7-nitroquinoxaline-2,3-dione, 3–3(2-carboxypiperazine-4-yl)propyl-l-phosphonate, and 2-amino-4-phosphonobutyrate. The individual responses of quisqualate-, ibotenate-, and kainate-stimulated inositol phosphate production were not additive. These results suggest that phosphoinositide metabolism activated by excitatory amino acids is mediated by a unique quisqualate-preferring receptor that is not antagonized by known N-methyl-d-aspartate and non-N-methyl-d-aspartate antagonists, and is relatively insensitive to α-amino-3-hydroxyl-5-methyl-4-isoxazole propionate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1990.tb01192.x
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  • 6
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of cubic SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7255-7258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K ε 0=9.52 and ε ∞=6.38; at 5 K ε0=9.28 and ε ∞=6.22. In all cases the estimated error is ±0.8%. The observed ratio ε0 /ε∞ agrees with the Lyddane–Sachs–Teller relation to 0.1% at 300 K and 0.2% at 5 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360438
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared dielectric constant of gallium arsenide (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6939-6942 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The real dielectric constant of gallium arsenide has been determined at 300 and at 5 K from fits to observed interference in transmission of thin samples with parallel surfaces. Measurement was carried out over all or part of the range 30–4000 cm−1. An accuracy of ±0.5% is estimated based on the quality of the analytic fits and the sample thickness measurement technique. We find at 300 K, ε0=12.90 and ε∞=10.86. At 5 K, ε0=12.46 and ε∞=10.58. An analytic expression for the dielectric function is given which allows accurate values of the real dielectric constant to be determined throughout most of the 0–4000 cm−1 spectral range. The observed ratio ε0/ε∞ agrees with the Lyddane–Sachs–Teller relation calculated with Raman values of transverse and longitudinal optical phonon frequencies to better than 0.1% at 300 and at 5 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363818
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  • 8
    Electronic Resource
    Electronic Resource
    Erratum: Infrared dielectric constant of gallium arsenide [J. Appl. Phys. 80, 6939 (1996)] (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3732-3732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365497
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  • 9
    Electronic Resource
    Electronic Resource
    Light-activated two-level resistance switching: An extremely sensitive GaAs/AlGaAs solid-state photon counter (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 117-119 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on a new type of extremely quiet and sensitive GaAs/AlGaAs photodetector. The photoresponse of the device is controlled by a hole trap in a tunnel barrier. Capture of a single photoinjected hole by the trap gates the device and produces an easily measured current pulse which can be counted by a conventional pulse-counting apparatus. There is only one detectable trap in a photoactive area of (approximately-equal-to)400 μm2. However, due to electric field channeling effects the trap collects photoinjected holes with a 1% efficiency in the active region. The absence of measurable dark counts in a 25 h period at 77 K establishes a minimum detectable photon flux 〈0.001 photons/s at 8200 A(ring).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103195
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  • 10
    Electronic Resource
    Electronic Resource
    Optimum growth parameters for type-II infrared lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1796-1799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface, structural, and optical properties of InAs/InGaSb/AlSb mid-infrared lasers grown by molecular beam epitaxy have been systematically studied, respectively, by Nomarski differential interference contrast, high-resolution x-ray diffraction, and variable-temperature photoluminescence. It is found that the optimum growth temperature is between 400 and 450 °C, based on the calibrated transmission thermometry. In addition, the impact of interfacial bond type and Sb sources has been investigated. A 5.91 μm laser, grown with the optimal growth parameters, exhibits a maximum cw operating temperature of 210 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370971
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