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  • 1995-1999  (7)
  • 1990-1994  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Atomic transport in thermal spike induced ion mixing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4292-4296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple relationship between the ratio of atomic transport induced by ion mixing and the activation energies for the impurity diffusion of constituents in a bilayer is presented to describe quantitatively the symmetric and asymmetric atomic transport in the thermal spike induced ion mixing. The model predicts fairly satisfactorily the trend of experimental observations in the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. For instance, the Pd/Co bilayer system shows nearly symmetric atomic transport, since its constituents have similar activation energies for the impurity diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352811
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 198-204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Y2O3 films were grown on an Si(111) substrate by ion assisted evaporation in an ultrahigh vacuum, and their properties such as crystallinity, film stress, and morphological change were investigated using the various measurement methods. The crystallinity was assessed by x-ray diffraction (XRD) and reflection high-energy electron diffraction. Interface crystallinity was also examined by Rutherford backscattering spectroscopy (RBS) channeling and transmission electron microscopy. The strain of the films was measured by RBS channeling and XRD. Surface and interface morphological characteristics were observed by atomic force microscopy and x-ray scattering method. By comparing the interface with the surface characteristics, we can conclude that many defects at the interface region were generated by interface interaction between the yttrium metal and Si substrate. Moreover, the film quality dominantly depended on the deposition temperature. The crystallinity was greatly improved and the surface roughness was drastically decreased in the temperature range 500–600 °C. On the other hand, in the temperature range 600–700 °C, the compressive stress and film density were further increased, and the island size decreased. Also, the shape of the surface islands was transformed from elliptical to triangular. The film stress was found primarily at the interface area because of the interaction between yttrium and Si substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370717
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  • 3
    Electronic Resource
    Electronic Resource
    Grain boundary diffusion effects on the sputter depth profiles of Co–Ag bilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3534-3540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the effects of surface roughness and grain boundary diffusion (GBD) at elevated temperatures on the Auger-electron-spectroscopy sputter depth profiles of Co–Ag bilayers and the GBD process of Ag atoms in Co. The Ag layer in the Ag/Co bilayer is transformed from a uniform layer to discrete islands by heat treatment. Enhanced mobility during sputtering at elevated temperatures makes Ag atoms migrate continually from islands to cover neighboring exposed Co, which reduces the size of Ag islands. On the other hand, the surface morphological modification of Co/Ag bilayer does not occur by heat treatment, and the depth profile at 340 °C resembles that from a uniformly intermixed film, which shows a drastic difference from that of Ag/Co. This is explained with a very thin and stable accumulation of Ag on the Co layer by GBD. A model of structural changes in Co/Ag subjected to ion sputtering at elevated temperatures is proposed on the basis of the results. The activation energy and pre-exponential factor for GBD of Ag in Co are found to be 0.46±0.06 eV and ∼1×10−8 cm2/s, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361405
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  • 4
    Electronic Resource
    Electronic Resource
    Adhesion enhancement of ion beam mixed Cu/Al/polyimide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 135-138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu (400 Å)/polyimide was mixed with 80 keV Ar+ and N2+ from 1.0×1015 to 2.0×1016 ions/cm2. The same processes were repeated for the Cu (400 Å)/Al (50 Å)/polyimide system which has Al as a buffer layer. The quantitative adhesion strength was measured by a standard scratch test. X-ray photoelectron spectroscopy was employed to investigate the change in the chemical bonds of the ion beam mixed polyimide substrate and the intermediate effects for the adhesion enhancement in Cu/Al/polyimide. Two distinct tendencies are observed in the adhesion strength: Cu/Al/polyimide is more adhesive than Cu/polyimide after ion beam mixing, and N2+ ions are more effective in the adhesion enhancement than Ar+. The formation of an interlayer compound of CuAl2O4 accounts for the former, while the latter is understood by the fact that N2+ ions produce more pyridinelike moiety, amide group and tertiary amine moiety which are known as adhesion promoters. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363999
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  • 5
    Electronic Resource
    Electronic Resource
    New method for thermal desorption spectroscopy using field electron emission microscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2573-2575 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a new method for thermal desorption spectroscopy using field electron emission microscopy. To investigate the validity of our method, we have performed hydrogen adsorption experiments on the well known W(100) and W(110) surfaces and also on W(310). The thermal desorption spectra of these systems show that this method permits the study of adsorption on various single crystal plans of a metal with one sample. This method also gives information about the dipole direction of the adsorbates directly from the thermal desorption spectrum without additional measurement of the work function change induced by adsorbates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147216
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 903-905 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119683
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanism for interfacial adhesion strength of an ion beam mixed Cu/polyimide with a thin buffer layer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 522-524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Cu (400 Å)/Al (50 Å)/polyimide system showed larger adhesion strength than that of Cu (400 Å)/polyimide after N2+ ion beam mixing. X-ray emission spectroscopy was performed to elucidate the mechanism of adhesion enhancement of the ion beam mixed Cu (400 Å)/polyimide with a thin Al buffer layer. Cu L2,3 x-ray emission spectra showed the formation of a CuAl2O4 layer which is strongly correlated with the large adhesion strength of a Cu/Al/polyimide. A decrease in adhesion strength at an ion dose higher than 5×1015 cm−2 was also explained by the formation of an amorphous carbon. This was understood by investigating C Kα x-ray emission spectra. The overall spectroscopic results were in accordance with the behavior of quantitative adhesion strength. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123174
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  • 8
    Electronic Resource
    Electronic Resource
    Growth stage of crystalline Y2O3 film on Si(100) grown by an ionized cluster beam deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2909-2914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the initial and epitaxial growth stage of Y2O3/Si(100) grown by reactive ionized cluster beam deposition, using x-ray diffraction (XRD), atomic force microscope, and reflection high-energy electron diffraction. We also investigated the crystalline structure of the films using transmission electron microscopy and XRD. The preferred growth direction of Y2O3 grown by an ion beam changed completely from the 〈111〉 to the 〈110〉 orientation in order to minimize the overall energy of the film as the substrate temperature increased. In addition to the kinetic energy of the deposited atoms, oxygen partial pressure and the substrate surface state also bear a relationship to the change in the preferred growth direction. The crystalline growth of Y2O3 film depends on the state of the surface at the initial growth stage, whether the Si surface was first exposed to oxygen or yttrium. In particular, the silicon oxide layer which formed on the Si surface during the initial growth stage played an important role in the epitaxial growth as well as the preferred growth direction of Y2O3 film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369056
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  • 9
    Electronic Resource
    Electronic Resource
    Ar+-induced mixing mechanisms in metal-metal bilayer systems (1992)
    Springer
    Journal of materials science 27 (1992), S. 2141-2146 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Ion-beam mixing in Al-Pd, Al-Cr, Pd-Cu, Ag-Cu and Ag-Fe bilayers has been studied using Rutherford backscattering spectroscopy (RBS) and Auger electron spectroscopy (AES) over an ion dose range between 1 × 1015 and 1 × 1016 Ar+ cm−2 at room temperature. RBS and AES results show that the mixing efficiency of the light elements is higher than that of the heavy elements. The mixing efficiency of a heavy element is independent of the heat of mixing energy, while that of a light element has a close relation with the heat of mixing. The experimental results are discussed in terms of cascade mixing and thermal spike mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01117928
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  • 10
    Electronic Resource
    Electronic Resource
    Synthesis of crystalline polyimide film by ionized cluster-beam deposition (1993)
    Springer
    Journal of materials science 28 (1993), S. 1537-1541 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Polyimide thin films were deposited by the ionized cluster-beam deposition technique. Imidization and crystallization of polyimide films were investigated using transmission electron microscopy and Fourier transform infrared spectroscopy. Polyimide films deposited under optimum conditions showed a maximum imidization and good crystal structure, which is superior to that of films fabricated by other techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00363345
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