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  • 1995-1999  (5)
  • 1990-1994  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1211-1212 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new real refractive index guided GaAlAs laser which satisfies both low operating current and low noise characteristics by self-sustained pulsation. The structure has a planar active layer and a GaAlAs optical confinement layer which give large saturable absorber, and small internal loss. As a result, as operating current as low as 19.7 mA at an output power of 3 mW is obtained under self-sustained pulsation, leading to a relative intensity noise level less than −135 dB/Hz.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112073
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Small-astigmatism, low-noise, and high-power self-sustained pulsation multiple-quantum-well laser diodes with a real refractive index guided self-aligned structure (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3656-3658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrated low-noise and high-power GaAlAs laser diodes with small astigmatism. The low-noise characteristics are realized by self-sustained pulsation due to the saturable absorption of a single-quantum-well located close to the triple-quantum-well active layer. The high-power and small-astigmatism characteristics are achieved by using a real refractive index guided self-aligned structure. The lasers showed a relative intensity noise less than −130 dB/Hz under 10% optical feedback in a very wide output-power range (5–35 mW), a stable fundamental transverse mode up to 150 mW, and astigmatism less than 1 μm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117014
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Brain MR imaging in patients with hepatic cirrhosis: relationship between high intensity signal in basal ganglia on T1-weighted images and elemental concentrations in brain (1997)
    Springer
    Neuroradiology 39 (1997), S. 546-550 
    Details
    ISSN: 1432-1920
    Keywords: Key words Brain magnetic resonance imaging ; Basal ganglia ; Cirrhosis ; hepatic ; Manganese
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract In patients with hepatic cirrhosis, the globus pallidus and putamen show high intensity on T1-weighted MRI. While the causes of this high signal have been thought to include paramagnetic substances, especially manganese, no evidence for this has been presented. Autopsy in four cases of hepatic cirrhosis permitted measurement of metal concentrations in brain and histopathological examination. In three cases the globus pallidus showed high intensity on T1-weighted images. Mean manganese concentrations in globus pallidus, putamen and frontal white matter were 3.03 ± 0.38, 2.12 ± 0.37, and 1.38 ± 0.24 (μg/g wet weight), respectively, being approximately four- to almost ten-fold the normal values. Copper concentrations in globus pallidus and putamen were also high, 50 % more than normal. Calcium, iron, zinc and magnesium concentrations were all normal. The fourth case showed no abnormal intensity in the basal ganglia and brain metal concentrations were all normal. Histopathologically, cases with showing high signal remarkable atrophy, necrosis, and deciduation of nerve cells and proliferation of glial cells and microglia in globus pallidus. These findings were similar to those in chronic manganese poisoning. On T1-weighted images, copper deposition shows no abnormal intensity. It is therefore inferred that deposition of highly concentrations of manganese may caused high signal on T1-weighted images and nerve cell death in the globus pallidus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002340050464
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Crystal growth of oxide and fluoride materials for optical, piezoelectric and other applications (1999)
    Springer
    Journal of materials science 10 (1999), S. 571-580 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract High quality oxide and fluoride single crystals for optical, piezoelectric and other applications have been grown by advanced crystal growth techniques. La3Nb0.5Ga5.5O14 and La3Ta0.5Ga5.5O14 piezoelectric single crystals of size and quality comparable to La3Ga5SiO14 (langasite), have been produced. The piezoelectric and device properties of the crystals were investigated. A search for new langasite-type materials was also performed. Growth conditions of (La,Sr)(Al,Ta)O3 and Ca8La2(PO4)6O2 single crystals are discussed. These crystals have excellent lattice matching with GaN, a promising material for optoelectronic devices. Promising optical micro-crystals—K3Li2Nb5O15, KNbO3 and Y3Al5O12—and new structural materials, Al2O3Y3Al5O12 eutectic fibers, have been grown by the micro-pulling-down (μ-PD) technique. The advantages of the μ-PD technique have been shown. Ce-doped fluoride single crystals—LiCaAlF6, LiYF4 and BaLiF3—have been grown for solid state UV laser applications. Growth results and optical characterizations are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008933507409
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Chemical doping and improved flux pinning in Hg-based superconductors (1996)
    Springer
    Journal of low temperature physics 105 (1996), S. 1359-1365 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Chemical doping of a small amount (0.02∼0.3) of rhenium (Re) ion into HgBa2Can−1CunOy(n=1∼4) has been studied. The flux pinning strength in these Hg-based superconductors is significantly enhanced compared to the undoped parent materials. Neutron diffraction analysis of representative samples (n=3) revealed that Re partially substitutes the Hg-site with octahedrally fully coordinated oxygen atoms, giving rise to the stabilization of Hg(Re)O layer and reduction of this blocking layer thickness. Associated with the expected hybridization of Re-5d and O-2p orbitals and possible metallization of the Hg(Re)O layer, the improved flux pinning behavior is considered to be caused by the decrease of the electromagnetic anisotropy and the enhanced interlayer superconducting coupling strength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00753889
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical conductivity of α-H x V2O5 (X=0.00-0.27): Dependence of hydrogen concentration and orientation (1994)
    Springer
    Journal of materials science 29 (1994), S. 478-481 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The dependence of the electrical conductivity, σ, on the hydrogen concentration and crystallographic orientation has been investigated using single crystals of HxV2O5, which were grown by the Bridgeman method and doped with hydrogen within the solid solubility in the α phase by the spillover technique. The temperature dependence of σ showed the feature of diffusive hopping of thermally activated electrons above ∼180 K and variable range hopping below ∼180 K. The dependence of σ on the crystallographic orientation was little different from that of V2O5. The change in σ with the hydrogen concentration was not monotonic; σ increases withx up tox }-0.06, but decreases abovex }-0.06. This behaviour can be explained based on the competition between the increase in the carrier density and the depression of the mobility of carriers with increasingx.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01162510
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Crystal structure and hydrogen occupation in H x V2O5(x=0.0–3.9) (1994)
    Springer
    Journal of materials science 29 (1994), S. 1319-1323 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Changes in the crystal structure and the lattice constants of powdered crystalline V2O5 after absorption of hydrogen were measured, as a function of the concentration, by X-ray diffractometry. The diffraction spectra obtained showed that three kinds of phases, α (x〈0.4 in H x V2O5), Β (co-existing with either terminal phase in the range of 0.4⩽x〈3.2) and γ (3.2⩽x⩽3.9), appear up tox=3.9, which was found to be the upper limit of the absorption at 70
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00975082
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Single-crystal growth of a new sodium molybdenum bronze Na0.86Mo5O14 (1997)
    Springer
    Journal of materials science 16 (1997), S. 619-620 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Abstracts are not published in this journal
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018502929921
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    Paper (German National Licenses)
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