Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2283-2285
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Valence-band photoelectron spectroscopy of CuInSe2, CuInS2, and CuGaSe2 surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123825
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