Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2283-2285
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Valence-band photoelectron spectroscopy of CuInSe2, CuInS2, and CuGaSe2 surfaces and interfaces give evidence for the formation of Cu vacancies when the Fermi level moves upwards in the band gap due to contact formation. The effect might be a key issue in understanding basic properties of solar cell devices based on these materials. © 1999 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.123825
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