Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (12)
  • 1985-1989  (3)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of epitaxial InAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6416-6424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence studies as well as reflectance and transmittance measurements were performed on high-purity epitaxial InAs grown by metal-organic chemical-vapor deposition. We report the optical identification of excitonic, donor, and acceptor impurity related transitions at a temperature of 1.4 K. Measurements at higher temperature and in the presence of magnetic fields up to 7 T support these identifications. We find the excitonic band gap at 415.65±0.01 meV according to the minimum in the polariton reflectance feature. The donor–acceptor-pair and acceptor-bound exciton transitions for three different acceptors are observed by photoluminescence, and we tentatively associate one of them to a double acceptor formed by a Ga impurity on an As lattice site. A donor-bound exciton transition is observed with a binding energy of 0.42 meV. The magnetic field dependence yields values of the electron effective mass and g factor of (0.026±0.002)m0 and −15.3±0.2, respectively, in good agreement with values obtained by other techniques. Furthermore, we report a deep luminescence band of unknown origin at ∼375 meV, related to drastic temporal changes in the band-edge photoluminescence intensity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363660
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Magnetophotoluminescence characterization of residual donors in GaAs grown by metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3205-3209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual donor species in undoped GaAs epilayers grown by metalorganic chemical vapor deposition have been characterized by magnetophotoluminescence (MPL) measurements at high magnetic fields (7 T). Most samples were grown using trimethylgallium and arsine, but samples grown using the liquid group-V source t-butylarsine were also studied. The results show good agreement with identifications previously made in high-purity samples (NA+ND≤5×1014 cm−3) at zero magnetic field, but with greatly improved spectral resolution and signal levels. With the MPL technique, residual donor species were resolved even in relatively impure samples (NA+ND=1×1016) for which no information was obtained at zero magnetic field. For the samples grown with arsine, Ge donors were observed to predominate in the high-purity samples, but Si was the dominant donor in the lower-purity samples. The Si impurity was traced to contamination from a quartz baffle in the growth chamber. Lower levels of sulfur donors were observed in many samples. Sulfur was found to be the second most predominant donor after Ge in samples grown with t-butylarsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341537
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    In situ observation of indium segregation by reflectance difference spectroscopy in single monolayer heterostructures grown by atomic layer epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single monolayers of InAs in GaAs and GaAs in InAs have been grown by atomic layer epitaxy (ALE) at 50 Torr. In situ reflectance difference spectroscopy monitoring of the surface during each stage of the growth showed a strong asymmetry in the surface behavior between the two systems. Following insertion of an InAs monolayer in GaAs, approximately 20 ML of GaAs are required to recover an In-free, As-stabilized GaAs surface at 390 °C. On the other hand, following the insertion of 1 ML of GaAs in InAs, the spectrum returns to a Ga-free, As-stabilized InAs surface after only 1 ML of InAs deposition. This behavior shows clear evidence of the presence of segregation caused by thermodynamic factors even at the very low growth temperatures used for ALE. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114944
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Growth mechanisms in atomic layer epitaxy of GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3390-3397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the different mechanisms governing the growth of GaAs by atomic layer epitaxy (ALE). The gallium precursors such as trimethylgallium (TMGa), triethylgallium (TEGa), and trisneopentylgallium (TNPGa) were characterized and compared during ALE by in situ reflectance difference spectroscopy (RDS). A fundamental difference is observed in the RDS behavior after the alkyl exposure between self-limiting and non-self-limiting precursors. A transient is observed during the purge following alkyl exposure for both self-limiting sources, (TMGa and TNPGa), and is absent with TEGa. This is attributed to the presence of methyl radicals when using self-limiting precursors. Atomic force microscopy measurements of the surface morphology show that a non-self-limiting surface prepared with TEGa has droplets forming on it. In contrast, TMGa and TNPGa show well-defined terraces without droplets. RDS real-time measurements show that Ga incorporating on the c(4×4) surface first reacts with the As in the top layer with a process involving both desorption of As and rearrangement of the remaining top As. We used these measurements to provide a detailed structural model of the process of Ga incorporation, and thus, solve the problem of how an As-rich surface with more than 1 ML coverage can yield 1 ML of material per ALE cycle. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367137
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence identification of residual donors in undoped GaAs grown by metalorganic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 401-403 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A photoluminescence technique was used to identify residual donors in the 1014 cm−3 range in high-purity GaAs grown by metalorganic chemical vapor deposition. The measurements were taken at zero magnetic field. A narrow-linewidth tunable laser was used to resonantly enhance a specific narrow-linewidth "two-electron'' satellite line of the donor-bound exciton, enabling determination of the 1s-to-2s donor energy separations. Ge was identified as the dominant residual donor. Lower levels of the donors X1 and X2 were observed in some samples. These are attributed to Si (or possibly Sn) and S donors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99479
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Lattice parameter variation in doped GaAs substrates determined using high resolution photoluminescence spectroscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6305-6311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variations in the lattice parameters of commercially available undoped and Si-doped GaAs substrates have been studied using high resolution photoluminescence (PL) spectroscopy. The lattice parameter difference between high quality epitaxial layers of GaAs and the doped substrates upon which they are grown induces a biaxial strain in the epitaxial layer which can be detected with remarkable sensitivity using low temperature PL. The PL results show that a lattice mismatch as low as 0.0013% can cause significant and well-resolved changes in the features of donor (D°X) and acceptor (A°X) bound exciton spectra, which are consistent with results obtained from samples subjected to externally applied biaxial stress. In addition to studying a variety of low lattice mismatch GaAs/GaAs:Si heterostructures, the technique is also successfully employed in the case of more highly strained GaAs grown on an In0.004Ga0.996As substrate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368953
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of high-purity GaAs using tertiarybutylarsine (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2029-2031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high-purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high-purity TBA has permitted the growth of material with liquid-nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101182
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    High resolution spectroscopy of free-standing GaAs films prepared by epitaxial liftoff (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5772-5775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-standing layers of high purity GaAs prepared by epitaxial liftoff are investigated using high resolution photoluminescence, optical transmission, and x-ray diffraction techniques. Low temperature (1.5 K) optical measurements of these thin, strain-free films yield spectra rich in structure, revealing much about the fundamental properties of the materials. X-ray diffraction analysis of layers as thin as 2000 Å produce well-resolved Pendellösung fringes, in excellent agreement with dynamical theory simulations. Once removed from their underlying substrates, these thin semiconductor cavities constitute unique systems for a variety of novel spectroscopic studies not possible in as-grown heterostructures. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368842
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effect of interfacial dopant layer on transport properties of high purity InP (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1960-1962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent Hall measurements were used to investigate the role of unintentional interfacial dopant layers on the electrical properties of high purity InP. Secondary ion mass spectroscopy was used to measure the level of Si contamination present in several samples at the substrate-epilayer interface. We show that the presence of interfacial dopant gives rise to two layer conduction whose temperature dependence mimics the freezeout behavior expected for a deep donor. However, the magnetic field dependence of the Hall data at low temperatures shows the expected behavior for the two layer model, including an order of magnitude variation in the apparent sheet concentration and Hall mobility over the range from 0.1 to 0.6 T at 77 K. We show that the true bulk mobility and carrier concentration can be accurately determined in samples with high interfacial contamination by performing Hall measurements at several magnetic fields at 77 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115639
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 976-978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth and characterization of high-quality InP/GaAs0.5Sb0.5/InP heterostructures and their application to double-heterojunction bipolar transistors (DHBT). The GaAs0.5Sb0.5 layer quality was evaluated by high-resolution x-ray diffraction (XRD), low-temperature photoluminescence (PL), and atomic force microscopy (AFM). The observed 4.2 K PL linewidth was 7.7 meV and XRD rocking curves matched those of dynamical scattering simulations. In contrast to previously reported InP/GaAs0.5Sb0.5/InP DHBTs, the present devices show nearly ideal base and collector currents, low turn-on and collector offset voltages, and a high current gain. Self-aligned DHBTs exhibit a cutoff frequency over 75 GHz and common-emitter current gain greater than 100 at 300 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123428
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...