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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 53 (1981), S. 324-330 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 84 (1980), S. 1767-1771 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5046-5051 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of silicon into boron nitride films (BN:Si) has been achieved during ion beam assisted deposition growth. A gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed with increasing silicon concentration. Ultraviolet photoelectron spectroscopy, field emission, and field emission electron energy distribution experiments indicated that the observed electron transport and emission were due to hopping conduction between localized states in a band at the Fermi level for the undoped c-BN films and at the band tails of the valence band maximum for the BN:Si films. A negative electron affinity was observed for undoped c-BN films; this phenomenon disappeared upon silicon doping due to the transformation to h-BN. No shift of the Fermi level was observed in any BN:Si film; thus, n-type doping can be excluded. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1540-8191
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Systemic venous oxygen saturation is clinically used as an indicator of a satisfactory oxygen supply demand balance on cardiopuimonary bypass (CBP). Cerebral desaturation has been associated with postoperative cognitive dysfunction and has an incidence of 17% to 23% on bypass. We tested the hypothesis that systemic venous saturation did not correlate with jugular bulb venous saturation. Blood was drawn from the radial artery, jugular bulb catheter, and venous return line for determination of pH, oxygen tension and saturation, and carbon dioxide tension at four times during bypass: warm 1 (following initiation of CPB); cold 1 (stable hypothermia); cold 2 (hypothermia prior to rewarm); and warm 2 (naso-pharyngeal temperature 36°C to 37°C). Correlations of jugular bulb and systemic venous saturation at cold 1 were r = 0.29, r2= 0.08, and p = 0.0005, and at warm 2 were r = 0.22, r2= 0.05, and p = 0.007. We conclude that systemic saturation is a poor indicator of cerebral saturation. The poor association of jugular and systemic pump venous saturations underscores our inability to evaluate adequacy of cerebral perfusion. Jugular saturation is lower than pump venous return blood, especially at times of lower oxygen delivery, thus either continuous invasive or noninvasive evaluation of cerebral oxygenation is required to evaluate the adequacy of cerebral perfusion.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Parkinson's disease may be linked to defects in mitochondrial function. Mitochondrially transformed cells (cybrids) were created from Parkinson's disease patients or disease-free controls. Parkinson's disease cybrids had 26% less complex I activity, but maintained comparable basal calcium and energy levels. Parkinson's disease cybrids recovered from a carbachol-induced increase in cytosolic calcium 53% more slowly than controls even with lanthanum and thapsigargin blockade. Inhibition of complex I with the Parkinson's disease-inducing metabolite 1-methyl-4-phenylpyridinium (MPP+) similarly reduced the rate of recovery after carbachol. This MPP+-induced reduction in recovery rates was much more pronounced in control cybrids than in Parkinson's disease cybrids. Parkinson's disease cybrids had less carbonyl cyanide m-chlorophenylhydrazone-releasable calcium. Bypassing complex I with succinate partially restored Parkinson's disease cybrid, and MPP+ suppressed control cybrid recovery rates. The subtle alteration in calcium homeostasis of Parkinson's disease cybrids may reflect an increased susceptibility to cell death under circumstances not ordinarily toxic.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1622-1624 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single crystalline (0001) gallium nitride layers were implanted with beryllium. Photoluminescence (PL) measurements were subsequently performed as a function of implantation dose and annealing temperature. One new line in the PL spectra at 3.35 eV provided strong evidence for the presence of optically active Be acceptors and has been assigned to band–acceptor (eA) recombinations. The determined ionization energy of 150±10 meV confirmed that isolated Be has the most shallow acceptor level in GaN. Co-implantation of nitrogen did not enhance the activation of the Be acceptors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2289-2291 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO2 layer and etched to form arrays of either 1, 3, or 5 μm holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 μm holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10–100 nA and required grid voltages ranging from 20–110 V. The grid currents were typically 1 to 104 times the collector currents. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2001-2003 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal-space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1meV with increased confidence. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2873-2875 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal/AlN/n-type 6H–SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H–SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H–SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H–SiC surface. The interface is found to have a low density of trapped charges of 1×1011 cm−2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H–SiC(0001), and indicates the formation of a high quality interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3912-3914 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study reports UV-photoemission (UPS) measurements made on boron nitride crystals and thin films. The materials examined are commercial grade c-BN powder and thin films of BN deposited with ion beam assisted e-beam evaporation and laser ablation. The thin film samples examined exhibited varying amounts of sp3 (cubic) and sp2 (hexagonal, amorphous) bonding as determined by FTIR measurements. The UPS measurements displayed the spectral distribution of the low energy photoemitted electrons and the total energy width of the spectra. These characteristics can be related to the electron affinity. The measurements on several of the BN powder and thin film samples revealed features in the emission spectra which are indicative of a negative electron affinity (NEA) surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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