Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 482-484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while subsequent annealing in oxygen or air ambient passivates this transition, which is ascribed to a donor-acceptor pair recombination between a sulphur vacancy and a copper vacancy. A defect mechanism is suggested that assumes the passivation of sulphur vacancies by oxygen in grain surfaces which can be activated by hydrogen annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119585
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.70.Tm; 79.20.Nc; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the 15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen implantation and diffusion in silicon and silicon dioxide (1995)
    Springer
    Applied physics 61 (1995), S. 381-388 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 79.20.Nc ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depth profiles of hydrogen implanted into crystalline silicon in random direction at different fluences have been measured by the15N technique and by SIMS. Whereas hydrogen implanted at a fluence of 1015 ions/cm2 shows some limited mobility, no such mobility is observed for higher implantation fluences. In these cases, ballistic computer codes describe the depth distributions well, within the ranges of both experimental and theoretical accuracy. Annealing up to 510 K does not change the hydrogen distributions. Furthermore, high-fluence hydrogen implantation into silicon dioxide has been examined. There is some indication for radiation-enhanced diffusion during the implantation process. Upon subsequent thermal annealing, the hydrogen is found to diffuse, probably via a trapping/detrapping mechanism associated with an OH/H2 transformation of the hydrogen bonding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540112
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Atomic nitrogen in C60:N@C60 (1998)
    Springer
    Applied physics 66 (1998), S. 287-292 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 36.40.Cg, 61.46.+w, 76.30.Rn, 82.80.Bg
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 60 (atomic nitrogen inside C60) is produced by ion implantation. Two different production methods are employed: Kaufman ion source and glow discharge. After the bombarded material is dissolved in toluene or CS2 and is filtered, several milligrams of C60 containing N@C60 in a concentration of 10-4 to 10-5 are obtained. N@C60 gives a very clear hyperfine-split electron paramagnetic resonance signal. The most prominent features of N@C60 are: (i) Nitrogen in C60 keeps its atomic electronic configuration and occupies the on-center position. (ii) N@C60 is stable at ambient conditions, the thermal instability starts at 260 °C. (iii) The complex survives exohedral addition reactions and is a sensitive detector of cage distortions caused by addends. (iv) C60 and N@C60 exhibit slightly different retention times in column chromatography, thus permitting an enrichment of N@C60 by this method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050668
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electrically conducting ion tracks in diamond-like carbon films for field emission (1999)
    Springer
    Applied physics 69 (1999), S. 239-240 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.80.Jh; 73.61.Cw; 79.70.+q
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Electrically conducting channels in an insulating carbon matrix were produced by 140-MeV Xe ion irradiation. The high local energy deposition of the individual ions along their pathes causes a rearrangement of the carbon atoms and leads to a transformation of the insulating, diamond-like (sp3-bonding) form of carbon into the conducting, graphitic (sp2-bonding) configuration. The conducting ion tracks are clearly seen in the current mapping performed with an atomic force microscope (AFM). These conducting tracks are of possible use in field emission applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050996
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ein quantitativer vergleich der weitwinkel-röntgenstreuung des celluloseanteiles in gequollenen und trockenen reyonfasern84. Mitteilung aus dem Institut für Cellulose-Forschung der AKU Utrecht (Holland). (1956)
    New York : Wiley-Blackwell
    Die Makromolekulare Chemie 18 (1956), S. 75-81 
    Details
    ISSN: 0025-116X
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Description / Table of Contents: Monochromatic X-ray diffraction patterns of rayons in the air dry and water swollen state are compared quantitatively. Taking into account the differaction pattern of water, the evaluation shows that the contribution of the cellulose component is only slightly different in the two cases, even if freshly spun never dried fibers are included. In particular, and in conformity with previous findings of Kratky and Sekora, there is no indication of a difference in the quantity of crystalline cellulose in the swollen and in the dry fibers.
    Notes: Ein quantitativer Vergleich der äquatorialen Streukurven von Röntgenaufnahmen gequollener und lufttrockener Reyonfasern, unter Berücksichtigung der Wasserstreuung, ergibt, daß die Streuung des Celluloseanteiles in beiden Fällen sehr wenig verschieden ist, auch wenn die Fäden in spinnfrischem Zustand untersucht werden. Insbesondere gibt es, in Übereinstimmung mit früheren auf anderem Wege erhaltenen Ergebnissen von Kratky und Sekora, keine Andeutung dafür, daß ein mengenmäßiger Unterschied in dem kristallinen Anteil gequollener und trockener Fasern vorliegt.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/macp.1956.020180108
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    A quantitative investigation on the X-ray small angle scattering of cellulose fibers. Part II. The scattering power of various cellulose fibersCommunication No. 90 from the Institute for Cellulose Research of the AKU and Affiliated Companies, Utrecht. (1959)
    Hoboken, NJ : Wiley-Blackwell
    Journal of Polymer Science 35 (1959), S. 145-165 
    Details
    ISSN: 0022-3832
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: This paper reports on quantitative measurements of the small angle scattering of various rayons and ramie fibers as functions of moisture content using a three slit vacuum camera and monochromatic radiation. The scattered intensity was normalized on sample thickness and primary intensity through determination of the absorbance of the sample and of the intensity of the transmitted beam measured in arbitrary units. From these data the scattering power as defined by Porod, being the mean square of the fluctuations of the electron density, was calculated. This quantity was then converted into electron units through calibration of the procedure with exposures of noble metal sols of known composition and thus of computable scattering power. The exprimental results were compared with the scattering power calculated for cellulose fibers when regarded as submicro tow-phase systems consisting of crystalline cellulose imbedded in a homogeneous mixture of noncrystalline cellulose and water. In the air-dry state a few of the rayon speciman examined exhibited a scattering power of magnitude consistent with theory. The majority yielded much higher values, up to six times larger (so does dry ramie). This is interpreted by the occurrence of submicro voids to a volume fracton of less than 0.75%, variable from fiber to fiber. This explanation is corroborated by the existenc of a distinct correlation between scattering power and gravimetric density of the fiber. In conclusion, microvoids are the principal scattering “particles” in dry fibers. The values of the scattering power of water swollen rayons and ramie can be interpretated on the basis of a three-pahse model, with the phases consisting of crystalline cellulose, a homogeneous mixture of amorphous cellulose with water, and water, respectively.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1959.1203512812
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...