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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5429-5431 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical spectra for the magneto-optical Kerr effect in polar geometry have been obtained for four series of L21 Heusler alloys Fe2 YZ and Co2 YZ, with Y=V, Cr, Mn, Fe, Co, Ni and Z=Al or Ga. Selected spectra are presented. Trends are identified in the relation between electronic structure and the polar Kerr angle spectrum for L21. Further it is shown that the large Kerr rotation in the C1b compound PtMnSb cannot be attributed to a few states close to the Fermi level. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6781-6785 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Higher binding energies (30–60 meV) in II–VI wide-gap materials result in large exciton densities, making optical transitions due to excitons dominant over free electrons and holes. Optical gain and threshold current densities in ZnCdSe based multiple quantum wire lasers are computed including the effect of strain. It is found that the tensile-strained quantum wires yield lower threshold current densities than compressive strained or unstrained structures. The calculated threshold current density for a defect free tensile-strained ZnCdSe–ZnMgSSe quantum wire laser, realized on an InP substrate, has been computed to be 58 A/cm2. The exciton transitions assist in lowering the threshold current density which is adversely affected by the presence of dislocations and surface states. It is found that the threshold current density would increase to 435 A/cm2 assuming 1017 cm−3 trapping levels due to dislocations and surface states. However, taking into account the exciton transitions, the threshold current density is reduced to 79 A/cm2 when assuming the same trapping level density. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 497-501 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable angle spectroscopic ellipsometry (VASE) technique is used to measure the optical constants of InGaAs/GaAs multiple quantum well (MQW) structures for the purpose of designing tunable optical modulators. The VASE measurements also include field-induced changes in index of refraction and absorption. These measured changes in MQWs are in agreement with theoretical computations. In addition, the design and simulated performance of an InGaAs/GaAs MQWs Fabry–Perot modulator using the VASE data is presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6199-6199 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First principles electronic structure calculations are used to predict the energy dependence of the polar Kerr effect in MnBi, MnSb, and a Mn2BiSb alloy. The compounds all have respectable Kerr angles and thus are potential data storage media. The technique used in this work is a full-potential linearized augmented Slater orbital approach. The Kerr angle is obtained from the conductivity tensor that is calculated, within linear response theory, using the Kubo formula. There are several desirable features in this approach. First, unlike methods based upon muffin-tin potentials, open crystal structures present no problems. Second, since the electronic wave functions are defined over the crystal unit cell rather than over space filling overlapping spheres, difficulties in handling the interstitial part of the required matrix elements are avoided. Finally, the small basis set (25 orbitals per atom) leads to reasonable computational times. Results of these calculations show that the Kerr angle in MnBi is above 1° at 1.6 eV and that its variation over 2–4 eV is linear and decreasing. MnSb shows a smaller rotation, about 0.5°, that is almost constant up to 3 eV and then also decreases linearly. The Kerr rotation of Mn2BiSb is approximately the average of MnBi and MnSb. This work has been supported in part by the Louisiana Quality Education Support Fund under Grant No. LEQSF (1991–1994)-RD-A-30. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6196-6198 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present theoretical calculations of the magneto-optic polar Kerr effect in bcc iron, fcc cobalt, and hcp cobalt. The Kerr angle and ellipticity are derived from the optical conductivity tensor, which is computed using wave functions obtained from full potential local spin-density electronic structure calculations. Predicted Kerr angles and ellipticities are computed as a function of magnetization direction. In the case of iron, the calculated Kerr spectra are found to be in good agreement with experimental results and previous calculations. However, in the case of cobalt, the results of previous theoretical studies differ significantly. Our results are in close agreement with experiment and with one of these previous theoretical studies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 4656-4660 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A method for detecting surface plasmon resonance with high resolution (∼10−5 degrees or ∼10−8 refractive index units) and fast response time (1 μs) is described. In the method, light is focused through a prism onto a metal film on which molecules to be detected are adsorbed. The total internal reflection of the incident light is collected with a bicell photodetector instead of a single cell or an array of photodetectors that are widely used in previous works. The ratio of the differential signal to the sum signal of the bicell photodetector provides an accurate measurement of shift in surface plasmon resonance angle caused by the adsorption of molecules onto the metal films or by conformational changes in the adsorbed molecules. Using the method, we have studied subtle conformational changes in redox protein, cytochrome c, due to an electron transfer reaction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 353-355 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A set of powerful x-ray imaging techniques using white-beam synchrotron radiation have been developed and applied to clearly reveal and map micropipes in SiC crystals at a "magnified" level. The experimental results and the corresponding simulations demonstrate explicitly that the micropipes are pure superscrew dislocations (SSDs). Moreover, these techniques provide accurate descriptions of the detailed structure of the SSDs, including the spatial distribution of the strain fields, the magnitudes of the Burgers vectors, the dislocation senses, and the surface relaxation effects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 784-786 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is presented for a possible mechanism of screw dislocation (including micropipe) nucleation in silicon carbide. The model is based on the observation of micropipe nucleation at the sites of foreign material inclusions using synchrotron white beam x-ray topography and transmission optical microscopy. It is shown that incorporation of the inclusion into the growing crystal can lead to deformation of the protruding ledge which constitutes the overgrowing layer. Accommodation of this deformation into the crystal lattice leads to the production of pairs of opposite sign screw dislocations which then propagate with the growing crystal. Evidence for the existence of such pairs of dislocations is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1596-1598 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gain coefficient of excitonic transitions is calculated for unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers as a function of operating wavelength and injection current. Unlike the III–V strained layer quantum well lasers, the gain coefficient due to excitonic transitions is significantly higher in II–VI systems as the exciton binding energy is more than 5 times larger. This results in a primary role for excitons in lasing which has been verified experimentally. Strain induced changes in energy band gaps and effective masses of light and heavy holes are included in the gain and threshold current density calculations, which are in agreement with experimental data available for compressive strained layers grown on GaAs substrates. Significantly low threshold current density of about 180 A/cm2 are predicted for the tensile strained ZnCdSe–ZnMgSSe and ZnCdSe–ZnSeTe quantum well lasers using InP substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 238-240 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown unstrained Al0.66In0.34As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 multiple-quantum-well (MQW) structures on InP substrates by metalorganic vapor phase epitaxy. Low-temperature photoluminescence was performed for these MQW structures. By comparing the luminescence peak energies with the theoretical calculations, we estimated the conduction-band offset ratio to be 0.75±0.10 for the Al0.66In0.34As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 heterostructure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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