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  • 11
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have achieved long-pulse plasma heating using a negative-ion-based neutral beam injector (NBI) in the large helical device (LHD), where the confinement magnetic field is generated by only external superconducting coils. In the initial long-pulse experiments at lower power than that in short-pulse experiments, 80 keV–1.1 MW NBI heating lasted for 10 s with a little increase in the plasma density at the pulse end. Almost steady-state plasma heating was achieved for 21 s with 66 keV–0.6 MW NB injection. Plasma relaxation oscillation phenomena at a period of 1–2 s were also observed for 20 s. Above 1 keV plasma was easily sustained with a long-pulse NBI heating in LHD, without the current drive nor the disruption in tokamaks. Negative ion source operation was stable and the cooling water temperature rise of beam accelerator grids was nearly saturated with a temperature rise below 10 °C. For a higher power injection, the pulse duration is determined by the beam blocking, where the reionization loss is exponentially increased together with an increase in outgas in the injection port. The port conditioning by a careful repetition of injection is effective to the extension of the injection duration and the plasma maintenance duration. The initial long-pulse NBI heating at the reduced power has demonstrated an ability of steady-state operation in superconducting LHD. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3066-3068 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Great optical activity is realized by a vacancy ordered III2VI3 compound (Ga0.3In0.7)2Se3 with point group 6 which is based on wurtzite structure and characterized by the screw arrangement of cation atoms along the c axis. The transition of the fundamental absorption edge is direct and the band gap is estimated to be 2.05 eV. An anomalous optical rotatory dispersion around the absorption edge is observed and the maximum rotatory power of 125°/mm is obtained at λ=620 nm. The optical activity for red light is always above 60°/mm, that is 4–6 times as large as that of α quartz. (Ga0.3In0.7)2Se3 single crystal is very useful, especially for the He–Ne laser as an optically active substance; the rotatory power reaches 103°/mm, being more than 5 times of α quartz. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2220-2222 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study single-carrier traps in a GaAs/AlxGa1−xAs heterostructure by observing random telegraph signals (RTSs), which are caused by the traps having energy levels within a few kBT of the Fermi level. RTSs are observed in a split gate device while a narrow channel is shifted by independently controlling the voltage applied to each part of the split gate. This measurement reveals the variations of the energy levels of traps with the channel position. From these variations the locations and the energy distributions of the traps are demonstrated. The strength of the confinement potential around the trap is also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 132-134 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and measured transport properties of resistively coupled single-electron transistors (R-SETs). In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlOx/Al tunnel junctions. In current–voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2038-2040 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed an aluminum single-electron transistor device which was modified to incorporate an additional floating node in between the gate and the electrometer. At high gate voltages, Fowler–Nordheim type emission occurred between the gate and the floating node where the charges were stored. The emission events were evidenced by the oscillatory electrometer current which allowed estimation of the number of storage electrons. We demonstrated experimentally the nonvolatile memory function of this device and the results were justified by numeric simulations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3555-3557 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-electron memory that utilizes carrier traps in a silicon nitride layer is proposed and experimentally demonstrated. The proposed device consists of an insulating three-layered memory node structure formed on a silicon substrate and a highly sensitive aluminum single-electron transistor that detects the written information. Successful memory operation is demonstrated with two types of write modes (slow/rapid) that depend on the state of the Si channel underneath. Carrier retention time is estimated to be around 45 min. Possibilities for both destructive and nondestructive readout are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2142-2144 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhancement of secondary electron emission was observed for both heavily Si-implanted and heavily Si-doped GaAs after annealing at 950 °C. The enhancement was found to be related to the generation of Ga vacancy during annealing. The assessment of electrical properties of the enhanced area revealed that the enhancement arises from the secondary electron production process in the bulk region, not from the surface effect including band bending at the wafer surface. We suggested that the excitons produced by primary electrons would ionize the lattice defects introduced in ion implantation and/or annealing processes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4093-4095 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel selectively doped AlGaAs/GaAs heterojunction was successfully formed on a vicinal (111)B substrate, in which both quasiperiodic and aperiodic multiatomic steps with the average spacings of ∼20 nm are introduced. It is found that the electrical conductance G⊥ of two-dimensional electrons across the steps is far lower than that of G(parallel) along the steps and the ratio G(parallel)/G⊥ exceeds 100 at 18 K. While G(parallel) is almost independent of temperature T below ∼70 K, G⊥ increases exponentially with 1/T with the activation energy of ∼5 meV, indicating the presence of potential barriers for the electron motion across the aperiodic steps. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: RNase III, a double-stranded RNA-specific endonuclease, is proposed to be one of Escherichia coli 's global regulators because of its ability to affect the expression of a large number of unrelated genes by influencing post-transcriptional control of mRNA stability or mRNA translational efficiency. Here, we describe the phenotypes of bacteria carrying point mutations in rnc, the gene encoding RNase III. The substrate recognition and RNA-processing properties of mutant proteins were analysed in vivo by measuring expression from known RNase III-modulated genes and in vitro from the proteins' binding and cleavage activities on known double-stranded RNA substrates. Our results show that although the point mutation rnc70 exhibited all the usual rnc null-like phenotypes, unlike other mutations, it was dominant over the wild-type allele. Multicopy expression of rnc70 could suppress a lethal phenotype of the wild-type rnc allele in a certain genetic background; it could also inhibit the RNase III-mediated activation of λN gene translation by competing for the RNA-binding site of the wild-type endonuclease. The mutant protein failed to cleave the standard RNase III substrates in vitro but exhibited an affinity for double-stranded RNA when passed through poly(rI):poly(rC) columns. Filter binding and gel-shift assays with purified Rnc70 showed that the mutant protein binds to known RNase III mRNA substrates in a site-specific manner. In vitro processing reactions with purified enzyme and labelled RNA showed that the in vivo dominant effect of the mutant enzyme over the wild-type was not necessarily caused by formation of mixed dimers. Thus, the rnc70 mutation generates a mutant RNase III with impaired endonucleolytic activity but without blocking its ability to recognize and bind double-stranded RNA substrates.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    Copenhagen : Munksgaard International Publishers
    Physiologia plantarum 105 (1999), S. 0 
    ISSN: 1399-3054
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Nodulated soybean (Glycine max [L.] Merr.) plants were grown in a nitrogen-free liquid culture medium prepared with distilled water. The cytosol fraction from root nodules showed a significant level of NADH-dependent nitrate reductase activity, even when the root did not show activity. This nitrate reductase was purified by column chromatography and native polyacrylamide gel electrophoresis (PAGE). The purified protein showed a main band at 100 kDa on sodium dodecyl sulfate (SDS)-PAGE. The Km value for nitrate was 0.16 mM, and the highest activity was obtained at around pH 7.5. These characteristics are very similar to the inducible type of nitrate reductase, previously purified from soybean leaves. The developmental change in activity of this enzyme corresponded to that in nitrogenase activity.
    Type of Medium: Electronic Resource
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