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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis and properties of epoxy-episulfide resins (1996)
    Weinheim : Wiley-Blackwell
    Angewandte Makromolekulare Chemie 240 (1996), S. 67-81 
    Details
    ISSN: 0003-3146
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Standard epoxy resins have good mechanical properties, but their prolonged low temperature curing time limits their potential use in clinical applications as well as in many industrial applications. A fast-curing epoxy-episulfide resin has been developed. The gel time of epoxy-episulfide made from EPONTrade mark of Shell Chemical Company. 828 ranges from 2 to 10 minutes by changing the ratio of the ingredients. The heat of reaction of this system is low, resulting in low cure shrinkage. Water absorption of the episulfide network is low. The epoxy-episulfide system cured with polyamide curing agent V-40 exhibits two transition temperatures, at about 85°C and 130°C, as shown in dynamic mechanical analysis data. In order to solve the long term stability problem of the above episulfides, and also the mixing problem, a lower viscosity resin, Eponex, was used to make Eponex-sulfide. Eponex-sulfide systems show promise in that they remain in a stable liquid form without epoxy. The other advantages appear to be retained.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/apmc.1996.052400106
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  • 2
    Electronic Resource
    Electronic Resource
    Optimisation of the electrochemical bath for growing device-quality CuInSe2 thin films (1998)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 8 (1998), S. 1-8 
    Details
    ISSN: 1057-9257
    Keywords: electrodeposition ; copper-indium-selenide ; thin films ; layer-by-layer deposition ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The electrochemical bath used for growing device-quality CIS (CuInSe2) thin films by co-deposition as well as layer-by-layer (LBL) deposition was characterised and optimised with respect to the film properties. The bath composition was varied by changing the Cu, In and Se ion concentrations in specific ratios in both co-deposition and LBL deposition. The film properties were analysed using techniques such as SEM (scanning electron microscopy), EPMA (electron probe microanalysis), AES (Auger electron spectroscopy) and XRD (X-ray diffraction). The structural, morphological and compositional properties of the films were characterised and their variation is attributed to the bath composition and growth conditions. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
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    Paper (German National Licenses)
  • 3
    Electronic Resource
    Electronic Resource
    Growth modes of solution-grown CdS thin films (1995)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 11-17 
    Details
    ISSN: 1057-9257
    Keywords: CdS ; chemical deposition ; complexing agent ; sulfurising agent ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: The growth modes of CdS thin films on glass in a chemical bath were analysed using scanning electron microscopy and optical microscopy. The results of these studies show that the film growth occurs by ion-by-ion condensation and by colloidal particles of CdS adhering to the substrate. Both mechanisms are operative from the initial stages of film growth. The predominance of one or other of these two growth modes depends on the abundance of Cd and S ions present in the solution, which is determined by the amount of complexing and sulphurising agents and ammonia used for the controlled release of Cd and S ions into the solution. The growth mode influences the optical properties of the films.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860050104
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative chemical depth profiles of ZrN/BN multilayers Dedicated to Professor Siegfried Hofmann on the occasion of his 60th birthday. (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 806-814 
    Details
    ISSN: 0142-2421
    Keywords: multilayers ; ZrN ; BN ; AES ; RBS ; depth profiling ; factor analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Multilayers of ZrN/BN have been deposited on Si(100) using a double ion beam sputtering system. The multilayers have been characterized by transmission electron microscopy, Rutherford backscattering spectroscopy and Auger electron spectroscopy (AES) depth profiles in order to get a quantitative analysis of the components and contaminants in the different layers and at their respective interfaces. Factor analysis is used to deconvolute the different chemical states of the components and to identify secondary phases and compounds that determine the quality of the multilayer. Two secondary phases have been observed at the different interfaces: one is associated with the incorporation of oxygen, mainly in the zirconium layer, and leads to the formation of ZrNxOy. In addition we have observed that Ar bombardment during the AES depth profile leads to the formation of ZrBxNy in all the interfaces. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Photoelectron spectroscopy versus absorption spectroscopy for quantitative characterization of nanometric powders coated with an overlayer (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 1016-1026 
    Details
    ISSN: 0142-2421
    Keywords: XPS analysis ; nanoparticles ; XAS ; EELS ; quantitative characterization of powders ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: For the present study we have considered powders made up of small particles (〈1 μm) coated with a uniform overlayer. Different models have been developed to predict the elemental compositions in this kind of sample by x-ray photoelectron spectroscopy (XPS) and absorption spectroscopies: electron energy-loss spectroscopy (EELS) and x-ray absorption spectroscopy (XAS). Isolated spherical or cubic particles, aggregated spherical particles and continuously layered models have been considered to take different possible textures of the samples into account. Theoretical curves have been compared to experimental data obtained for Al2O3/Al ultrafine powders made up of Al metal cores coated with an Al2O3 overlayer. The dependence of both photoelectron and absorption spectroscopy analysis on overlayer thickness and sample texture as a function of particle size is discussed. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Substrate Effects and Chemical State Plots for the XPS Analysis of Supported TiO2 Catalysts (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 292-294 
    Details
    ISSN: 0142-2421
    Keywords: XPS ; Auger parameter ; TiO2 ; catalyst ; chemical state plot ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The analysis by XPS of TiO2 deposited on different substrates (SiO2, MgO, Ag, SnO) shows the existence of shifts in the Ti 2p binding energy and Auger parameter values. The magnitude of these shifts is a function of the support and of the coverage. A systematic representation of these shifts is possible with a chemical state plot. The implications of the existence of such shifts for the characterization of catalysts are discussed. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Chemical Analysis of Ternary Ti Oxides using Soft X-ray Absorption Spectroscopy (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 804-808 
    Details
    ISSN: 0142-2421
    Keywords: Ti oxides ; x-ray absorption spectroscopy ; electronic structure ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: We measured the O 1s and Ti 2p X-Ray Absorption Spectroscopy (XAS) spectra of a series of ternary Ti oxides. The spectra of A12TiO5 are compared to those of TiO2 and the physical mixture TiO2-Al2O3. The spectra reflect important differences in the electronic structure caused by changes in the chemical bonding. It is also shown that XAS can be used to distinguish a true compound like Al2TiO5 from a stoichiometric mixture like TiO2-Al2O3. The differences in the spectra of NiTiO3, SrTiO3, BaTiO3 and PbTiO3 are discussed in terms of the different chemical environment and the local coordination. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Calibration of the Probing Depth by Total Electron Yield of EXAFS Spectra in Oxide Overlayers (Ta2O5, TiO2, ZrO2) (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 707-714 
    Details
    ISSN: 0142-2421
    Keywords: x-ray absorption spectroscopy ; total electron yield ; oxides ; EXAFS probing depth ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Calibration of the probing depth by x-ray absorption spectroscopy (XAS) in oxide materials is intended by measurement of the total electron yield (TEY) of electrons ejected by absorption of the radiation. Measurements have been carried out for three series of electrolytic metal oxide overlayers with different thickness. The experiments have been conducted at the Ti K, Ta LIII and Zr K edges. Analysis of the XAS spectra is carried out by factor analysis and conventional Fourier transformation and fitting analysis. The data showed that the information depth by XAS follows the order ZrO2〉TiO2〉Ta2O5 at the Ti K, Ta LIII and Zr K edges.As an alternative, the absorption spectra of the same samples were measured in the conversion electron yield (CEY) mode: i.e. by measuring the current of He+ ions produced by the ejected electrons in an atmosphere of He in contact with the sample. Here, the information depth is slightly different from that obtained by TEY. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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