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  • 1
    Electronic Resource
    Electronic Resource
    Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1292-1297 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, we report a study of mosaic structures in partially relaxed Si0.7Ge0.3 epilayers grown on Si(001) substrates by x-ray double- and triple-axis diffractometry. The samples have different layer thicknesses and hence different degrees of strain relaxation. Our results show that, at early stages of strain relaxation, the films contain mosaic regions laterally separated by perfect regions. This is because the mosaic structure caused by a misfit dislocation is effectively localized in a lateral range of the layer thickness. Therefore, far from the dislocations, the film is virtually a perfect crystal. With the increase in the degree of strain relaxation, and consequently in the dislocation density, the mosaic regions of the layer expand while the perfect regions shrink and finally vanish completely. Moreover, our results indicate that the conventional method of estimating dislocation density from the x-ray rocking curve width fails in our case. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370884
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy of molybdenum-containing carbon films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4871-4875 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from x-ray photoelectron spectroscopy (XPS) measurements of molybdenum-containing carbon films (Mo–C:H) deposited using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system are reported in this article. The Mo–C:H films were deposited using a technique with two Mo screen grids incorporated inside the ECR-CVD chamber. The versatility of this technique arises from the ability to control the degree of plasma ionization, sputtering rate of the metal grids, and energy of the impinging ions. Variation of the (CH4/Ar) gas flow ratio results in a change of the Mo fraction within the range of 0.32–15.11 at. %. For large amounts of Mo, the C 1s peak was split into four components with binding energies of 283.05, 284.67, 286.22, and 288.17 eV. These were identified as carbidic (metallic), polymeric, and oxidic (single- and double-bond) carbon, respectively. The presence of oxygen was detected in the films, due possibly to free-radical absorption at the film surface during deposition, or oxidation of the metallic Mo at the surface upon exposure to atmosphere. The results showed that the ECR-CVD technique is useful and effective for the deposition of Mo–C:H films with low- and high-Mo content. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371454
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7404-7406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resonant photorefractive devices using low temperature AlGaAs/GaAs multiple-quantum-well structures in a parallel field geometry are demonstrated. The samples are semi-insulating as grown. The AsGa-related defects incorporated into the samples during low temperature growth provide the required deep centers. No proton implantation, Cr doping, or annealing is needed for device fabrication. In the photorefractive wave mixing experiment, an output diffraction efficiency higher than 0.84% and a two-wave-mixing gain of more than 3000 cm−1 are obtained under a dc electric field of 15 kV/cm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361423
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  • 4
    Electronic Resource
    Electronic Resource
    Neutron scattering studies of the magnetic order in RNi2B2C : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5857-5859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neutron diffraction has been used to investigate the magnetic order of RNi2B2C. For R=Er the system orders antiferromagnetically at TN=6.8 K, and this long range order coexists with superconductivity (Tc=11 K). The magnetic structure is an incommensurate, transversely polarized spin-density-wave state, with the modulation wave vector δ along the a axis and the moments along b. δ has a temperature-independent value of 0.5526 (2π/a), with the structure squaring up at low temperatures. For R=Ho the moments also prefer to reside in the a–b plane, but initially an incommensurate c-axis spiral state forms upon cooling, with TN≈TC≈8 K. This c-axis spiral consists of ferromagnetic sheets of holmium moments in the a–b plane, but with each sheet rotated by ∼163° as one proceeds along the c axis. Small a-axis peaks are also observed above the reentrant superconducting transition over a narrow temperature range, but the c-axis peaks dominate. Just below the reentrant transition at ∼5 K the magnetic system locks-in to a simple commensurate antiferromagnetic structure, which permits superconductivity to be restored. The c-axis spiral, the a-axis component, the commensurate antiferromagnetic structure, and the superconducting phase are all in a delicate balance energetically, and this balance may be easily shifted by subtle changes in composition, magnetic field, and pressure. DyNi2B2C orders antiferromagnetically at TN=11 K, with the same commensurate antiferromagnetic structure as found for the holmium material at low temperature. The existence of superconductivity in some samples of DyNi2B2C is consistent with the antiferromagnetic structure observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362150
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  • 5
    Electronic Resource
    Electronic Resource
    Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1167-1169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method using a low-temperature Si (LT-Si) buffer layer is developed to grow a SiGe epilayer with low density of dislocations on a Si substrate by molecular-beam epitaxy. In this method, a LT-Si layer is used to release the stress of the SiGe layer. The samples have been investigated by x-ray double-crystal diffraction and transmission electron microscopy. The results indicate that the LT-Si is effective to release the stress and suppress threading dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360899
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial structure of molecular beam epitaxial grown cubic-GaN films on GaAs(001) probed by x-ray gazing-angle specular reflection (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2981-2983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a study of interfacial structure of GaN films grown on GaAs(001) substrates by plasma-assisted molecular beam epitaxy using x-ray grazing-angle specular reflection. We show that interfacial layers with electron densities differing from those of GaN and GaAs were formed upon deposition of GaN. It is also found that the interfacial structure of our systems depends strongly on the course of the initial layer deposition. The phase purity of the GaN films was examined by x-ray reciprocal space mapping. A simple kinetic growth model suggested by our results has been presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123986
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  • 7
    Electronic Resource
    Electronic Resource
    Improvement of Ge self-organized quantum dots by use of Sb surfactant (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2541-2543 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and free of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121412
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3513-3515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of thermal annealing on optical emission properties of low-temperature (LT) grown AlGaAs/GaAs multiple quantum wells (MQWs) by using photoluminescence (PL) spectroscopy. For comparison, the results on normal-temperature (NT) grown MQWs implanted with protons are also presented. The LT sample was grown by molecular beam epitaxy at 310 °C. The as-grown LT-MQWs show moderately strong PL. Upon annealing at 600 °C, the PL intensity of the LT-MQWs is dramatically quenched, in sharp contrast to the large increase in PL intensity of the implanted NT-MQWs. The quenching of PL intensity in the LT-MQWs is attributed to the formation of arsenic clusters that fast trap photoexcited carriers. In addition, an enhancement in the interface intermixing and roughening induced by thermal annealing has also been observed in the LT-MQWs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117229
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  • 9
    Electronic Resource
    Electronic Resource
    Low-temperature AlGaAs/GaAs multiple quantum well structure and its application to photorefractive devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 812-814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the low-temperature (LT) growth of a AlGaAs/GaAs multiple quantum well (MQW) structure by molecular beam epitaxy and demonstrate its application to photorefractive devices. The samples are semi-insulating as grown, and show large electro-optic effect. Resistivity up to 108 Ω cm has been observed. The electroabsorption approaches 3000 cm−1 and the electrorefraction is higher than 1.5% for dc electric field of 15 kV/cm. The effect of annealing on electrical and optical properties of LT AlGaAs/GaAs MQW has also been investigated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116541
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  • 10
    Electronic Resource
    Electronic Resource
    Fine structure of DX(Sn) centers in AlxGa1−xAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2497-2500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution Laplace defect spectroscopy was used to study the fine structure of the electron emission process of DX(Sn) centers in AlxGa1−xAs (x=0.26,0.53). Two groups of peaks in the spectra of electron emission rates were found to correspond to two DX-like centers observed by deep level transient spectroscopy. The line splitting in both groups derives from the alloy disorder effect attributed to the different local configurations of Al and Ga atoms around two DX-like centers. Experimental evidence for the microscopic nature of two DX-like centers in Sn-doped AlGaAs is provided. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368614
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