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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Optical and photoelectrical properties of β-FeSi2 thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4793-4795 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absorption, photocurrent, and infrared reflectivity spectra of the polycrystalline β-FeSi2 thin films in relation to the Si substrate temperature are presented. The photocurrent spectra involving both the fundamental interband, extrinsic defect transitions of β-FeSi2 and the intrinsic transitions of Si substrates are observed. Both the absorption and photocurrent measurements show the direct gap nature. A simple recombination model is proposed to account for the photocurrent results. We show that better quality β-FeSi2 films can be achieved at higher substrate temperature. The simplicity, sensitivity, and reliability of the photocurrent measurements for studying β-FeSi2 are well demonstrated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359761
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic structure induced by lateral composition modulation in GaInAs alloys (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2144-2146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been recently shown that growth of [001]-oriented short period (AC)n/(BC)n vertical superlattices (n∼1−2) spontaneously creates a lateral composition modulation in the substrate plane ([110] direction), where wire-like AC-rich and BC-rich domains alternate with a period of ∼100−200 Å. This creates a new type of lattice structure with orthogonal [001] and [110] strain fields and compositional waves. Using a three-dimensional plane-wave pseudopotential approach, we study here the electronic properties of this type of structure in a GaInAs alloy, predicting valence band splittings into distinctly polarized components, a ≤100 meV band-gap reduction and strong, type I electron and hole confinement in the In-rich lateral channels. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121303
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    Paper (German National Licenses)
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