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  • 1995-1999  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2833-2837 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdNiTe nanostructured thin films were prepared by radio frequency sputtering from a target of CdTe and nickel compressed powders. The structural and electrical film properties were studied as a function of the atomic nickel concentration in the films (x=0.05, 0.10, and 0.15). X-ray diffraction patterns showed a cubic CdTe parent structure with a (111) preferential orientation. The microcrystalline grain size in the films showed a systematic decrease with the increase of Ni content, starting with grain sizes of around 35 nm for x=0.05, down to an average of 26 nm for x=0.15. From scanning electron microscopy micrographs, a fine granular morphology with a random distribution of grain sizes in the films was observed. The film electrical resistivity was measured as a function of the temperature in the range T: 26–473 K. The temperature dependence of the dark resistivity over this wide temperature range showed a clear deviation from a simple thermally activated carrier transport mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 708-711 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xNixTe nanostructured thin films have been deposited using the radio frequency sputtering technique. Films are formed by sphericallike microcrystallites with a broad grain size distribution. The measured nanocrystallite average diameters were 35, 30, and 26 nm corresponding to the films with Ni concentrations of 5%, 10%, and 15%, respectively. The film structure was zincblende, resembling the crystalline structure for bulk CdTe. Particle-size effects were observed in the optical absorption spectra. As the Ni content in the films increases, the grain size diminishes, and the optical band gap (Eg) energy shows a blue shift at a rate of about 7.5 meV/at. %, for Ni concentrations up to 15 at. %. Alloying effects additional to quantum confinement effects are discussed. The Eg shifts due to quantum confinement have been found to fall in the intermediate regime between strong and weak confinement. The quantum yield for the photoluminescence peak increases as the particle size decreases, probably as a result of exciton recombination enhancement due to better nanocrystallites quality.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Using a radiofrequency sputtering deposition technique, ternary Cd0.18Sb0.64Te0.18 thin films have been grown on glass substrates at several substrate temperatures (50–250°C). The samples have an Sb content of about 63 at %, as measured by Auger spectroscopy. The surface roughness, the structural and the electrical properties of the films were studied as a function of substrate temperature. X-ray diffraction (XRD) measurements showed that the structure of the films changes from an amorphous phase, when deposited at lower substrate temperatures, to a mixture of two crystalline phases (CdTe and Sb) for higher substrate temperatures. Atomic force microscopy shows an increase in the surface roughness with an increase in the substrate temperature, clearly showing the formation of crystalline phases with microcrystallite sizes in good agreement with those determined from XRD measurements. The amorphous-to crystalline transition is accompanied by an abrupt increase in the room temperature electrical conductivity of the films. This increase in the conductivity as well as its temperature dependence in the range of room temperature to 150°C can be understood in terms of an electrical percolation process through the conducting Sb crystallites.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 34 (1999), S. 2183-2188 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract When human tooth enamel is heated either in vacuum or air it presents drastic changes in electrical susceptibility, conductivity and structural properties. In this paper we report an insulator-conductive transition which is observed in air around 350°C where enamel conductivity changes drastically and its electrical resistance decreases from 1015 to 105 Ω that is, it goes from an insulator to a super-ionic ceramic behavior. This transition, first evidenced in vacuum by electron microscopy observations, is now completely determined by a.c. impedance spectroscopy technique and its characterization was carried out as a function of the frequency and temperature. X-ray in situ heating diffraction experiments show that there is no structural phase transition during a wide range of temperature including the one where the conductivity transition occurs.
    Type of Medium: Electronic Resource
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