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  • 1
    Electronic Resource
    Electronic Resource
    The effect of Mn on mineral stability in metapelites (1997)
    Oxford, UK : Blackwell Publishing Inc
    Journal of metamorphic geology 15 (1997), S. 0 
    Details
    ISSN: 1525-1314
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: Calculations based on a KMnFMASH petrogenetic grid derived using an internally consistent thermodynamic dataset indicate that the principal effect of the presence of Mn in average subaluminous pelite compositions is to stabilize garnet to higher and lower pressures and temperatures over a wide range of bulk compositions. Garnet-bearing fields expand to lower temperatures and pressures with the addition of Mn, and garnet appears as an extra phase at low pressures. The addition of Mn also increases the number and extent of four AMnFM phase assemblages and stabilizes five AMnFM phases along univariant reactions. The KMnFMASH system predictions for typical subaluminous pelite bulk compositions match the sequence of isograds and assemblages observed in the Barrovian zones. The sequence of assemblages observed in the Stonehaven section can also be predicted if there is variation in bulk composition within the stratigraphic section. Mn appears to be less important in producing the sequence of isograds and garnet-absent assemblages in the low-pressure Buchan zones. The addition of Mn to the calculations does not change the sequence of isograds that are predicted to be stable in a regional metamorphic terrane, but the P–T position of these isograds does change. In particular, the predicted temperature of the garnet-in isograd is lowered by as much as 100 °C by the addition of Mn to KFMASH. Mn also increases the range of metapelite bulk compositions that develop the assemblages traditionally identified as metapelite isograds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1525-1314.1997.00011.x
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  • 2
    Electronic Resource
    Electronic Resource
    Interdiffusion of lateral composition modulated (GaP)2/(InP)2 short-period superlattices with different encapsulants (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1233-1235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of lateral composition modulated (GaP)2/(InP) 2 short-period superlattices (SPSs) is reported. The lateral composition modulation is achieved by the strain induced lateral layer ordering (SILO) process. A blueshift in the interband transition is observed by photoluminescence spectroscopy for capless and SiO 2 encapsulated annealed SPSs (800 °C, 5.5 h), while the intensity and wavelength of Si3N4 encapsulated annealed SPSs are only slightly perturbed. From transmission electron microscopy, capless annealed SPSs (800 °C, 5.5 h) retain their lateral composition modulation, however, the (001/2) satellite reflections disappear. For long anneal times (48 h), the interband transition corresponds to that of a In0.50Ga 0.50P alloy, suggesting the lateral composition modulation disappears. The observed lateral interdiffusion coefficient exceeds the vertical by a factor of ∼30, suggesting SPS interdiffusion is enhanced by native point defects. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362860
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  • 3
    Electronic Resource
    Electronic Resource
    Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2993-2995 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of intermediate temperature annealing on the carbon-doped base region of InGaP/GaAs heterojunction bipolar transistors (HBTs) was studied. This work shows that after annealing at only 600 °C a sample doped at 5.5×1019 cm−3 displays carbon precipitation. InGaP/GaAs HBT structures were grown for the annealing study. Hall measurements were used to measure hole concentration. Atomic force microscopy was employed to identify carbon precipitation. The annealing process not only removes hydrogen from the base but also creates carbon precipitates. The dc current gain measurements imply that the carbon precipitates increase base recombination. These results are very important in the growth and postgrowth annealing of high gain HBTs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123990
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  • 4
    Electronic Resource
    Electronic Resource
    Electron paramagnetic resonance imaging of the distribution of the single substitutional nitrogen impurity through polycrystalline diamond samples grown by chemical vapor deposition (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1201-1204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distribution of the single substitutional nitrogen impurity (NS0) through the thickness of diamond films grown by chemical vapor deposition has been studied using Electron Paramagnetic Resonance imaging. The design of an Electron Paramagnetic Resonance imaging probe is described. With this probe we have measured mean bulk concentrations down to a few parts per billion carbon atoms or equivalently ∼1014 cm−3 in diamond samples with dimensions 4.5×10×0.5 mm and achieved a through film spatial resolution of the NS0 distribution of 20 μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365889
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  • 5
    Electronic Resource
    Electronic Resource
    A multiphoton polarization study of the Rydberg states of OCS in the 70 500–74 500 cm−1 energy region (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 6147-6153 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The polarization dependence of the (2+1) and (3+1) resonance enhanced multiphoton ionization of OCS have been investigated in the 70 500–74 500 cm−1 energy region. This region contains a complex system of bands arising from the excitation of the 4p Rydberg states. The symmetry of most of the observed bands have been unambiguously determined based on the intensity changes of the two and three photon resonant spectra using both linearly and circularly polarized light. These results generally confirm the assignments suggested in a previous study. New bands have also been observed and some new assignments are proposed. The vibrational frequencies ν1, ν2, and ν3 of the Rydberg states in that energy region are determined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472474
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  • 6
    Electronic Resource
    Electronic Resource
    Improved thermal stability of AlGaAs–GaAs quantum well heterostructures using a "blocking'' Zn diffusion to reduce column-III vacancies (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1859-1861 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the reduction of layer intermixing (disordering) in AlGaAs–GaAs quantum well heterostructures (QWH) during high-temperature anneals by an initial low-temperature "blocking'' Zn diffusion. Room-temperature photoluminescence measurements of the increase in the lowest electron-to-heavy-hole transition energy in the QW are used to characterize the extent of layer intermixing. Doped (C and Si) samples annealed (850 °C, 12 h) after a low-temperature blocking Zn diffusion (480 °C) exhibit reductions in energy shift from ∼177 meV to as little as ∼18 meV. Similar effects are also observed, but to a lesser extent, for undoped samples. The improved thermal stability is attributed to a Zn-diffusion induced reduction in the number of column-III vacancies in the active layers and is confirmed by secondary-ion mass spectroscopy measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114356
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of alloy ambient on PdGe contacts on n-type GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3479-3481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high concentration of hydrogen in the alloy ambient slows the formation of PdGe contacts and increases the resistance of the PdGe to GaAs etchants. The effects of alloy ambient on alloy formation, specific contact resistance, and chemical reactivity of PdGe contacts on n-type GaAs have been studied. A very low specific contact resistance of 〈1×10−7 Ω cm2 has been achieved on GaAs with PdGe contacts alloyed at 300 °C for 15 min in a hydrogen ambient. These results indicate that PdGe may be a desirable contact for GaAs-based transistors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121672
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  • 8
    Electronic Resource
    Electronic Resource
    Semi-insulating In0.49Ga0.51P grown at reduced substrate temperature by low-pressure metalorganic chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1822-1824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resistivity unintentionally-doped In0.49Ga0.51P lattice matched to GaAs has been grown via low-pressure metalorganic chemical vapor deposition at a reduced growth temperature. These layers have excellent surface quality and are single crystal. The resistivity increases exponentially as the growth temperature is decreased from 550 to 490 °C, resulting in a resistivity of ∼109 Ω cm for samples grown at 490 °C. In addition, the photoluminescence intensity decreases exponentially for growth temperatures below 550 °C, indicating an increase in nonradiative recombination related to an increasing trap concentration. For samples grown at 550 °C, constant capacitance deep level transient spectroscopy measurements show a strong broad peak at ∼200 °K with an ionization energy of 0.40±0.04 eV, verifying the presence of an electron trap. The gummel plot and I–V characteristics of an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 2000-Å-thick InGaP buffer layer grown at 500 °C are identical to that of an HBT grown without the InGaP buffer layer, indicating that the semi-insulating InGaP layer is compatible with GaAs-based device epitaxy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118702
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  • 9
    Electronic Resource
    Electronic Resource
    Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 982-984 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of ex situ high temperature annealing (T(approximately-greater-than)500 °C) on the hole and hydrogen concentration of the base and on the dc device characteristics of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition have been studied. Using rapid thermal annealing, hydrogen can be completely annealed out of the base, activating the carbon acceptors. Due to the low diffusivity of carbon, the high temperatures necessary to remove most of the hydrogen do not degrade the device characteristics. Using this simple technique to eliminate hydrogen from the base prior to device fabrication should improve the reliability of GaAs-based transistors with a carbon-doped base. Results also indicate that unlike carbon-doped In0.53Ga0.47As, hydrogen does not significantly affect the minority carrier characteristics of carbon-doped GaAs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116119
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  • 10
    Electronic Resource
    Electronic Resource
    Keen, Ralph: Divine and Human Authority in Reformation Thought: German Theologians on Political Order, 1520–1555 : Nieuwkoop, De Graaf, 1997 (1998)
    New York : Cambridge University Press
    Church history 67 (1998), S. 782-784 
    Details
    ISSN: 0009-6407
    Source: Cambridge Journals Digital Archives
    Topics: History , Theology and Religious Studies
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.2307/3169880
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