Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 2990-2993
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The two possible causes of depth inhomogeneities of the microstructure of porous silicon are changes in the HF concentration with depth and a varying chemical etching rate of the porous silicon layer. During anodization chemical etching will become important for microporous silicon — e.g. p-porous silicon — due to the large internal surface area, especially at long etching times. On the other hand, a considerable decrease of the HF concentration will occur during etching with high current densities to produce p+-porous silicon with high porosities. We have investigated the depth inhomogeneity of porous silicon layers by spectroscopic ellipsometry, Raman spectroscopy and photoluminescence measurements. From a line shape analysis of the Raman signal a size distribution of nanocrystals is deduced. For p-porous silicon smaller nanocrystals are found near the surface of the layer; for p+-porous silicon etched with high current densities smaller nanocrystals are found near the porous silicon/substrate interface. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363156
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