Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (5)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Smoothing of YBa2Cu3O7−δ films by ion cluster beam bombardment (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 246-248 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Smoothing high-temperature superconductor (HTS) surfaces, especially HTS thin-film surfaces, is crucial for HTS thin-film device processing. In this letter, we describe a method to planarize the surface of a YBa2Cu3O7−δ HTS film down to a smoothness with a standard deviation of 1 nm or better. The method includes first smoothing the HTS surface by ion cluster beam bombardment, followed by annealing in oxygen ambient to regrow the damaged surface layer. Additional YBCO layers can be grown epitaxially on the treated surface, even without removing the top surface layer, which contained some residual damage after annealing. This method can be integrated into HTS circuit fabrication as a key step of planarization. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120699
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectroscopy study of Au trapping and migration in the Au-irradiated YBa2Cu3O7−δ film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2738-2740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range data and migration of Au in YBa2Cu3O7−δ film were studied with implanted 197Au (1.5 MeV 5×1015 Au+/cm2) as a tracer. The film was a c-axis oriented film, ∼750 nm thick, deposited by high-pressure planar dc sputtering on 〈100〉 LaAlO3. Analysis by secondary ion mass spectroscopy shows that the as-implanted Au concentration distribution is essentially Gaussian-like and the depth (Rˆp) of maximum Au concentration (∼1.2 wt %) is 201 nm. The projected range (R¯p) and (Rˆp) are found to be in very good agreement with the simulated data by TRIM−95, whereas the measured "straggle'' (ΔRp*) is about 20% larger than that by TRIM−95 simulation. It has also been found that the implanted 197Au starts to migrate within the film at a temperature between 650 and 700 °C, which is much higher than that for the implanted 2H (∼175 °C) and the implanted 18O (between 250 and 300 °C) in c-oriented YBa2Cu3O7−δ films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115582
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial SrRuO3 thin films on (001) SrTiO3 (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1047-1049 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly conductive metallic oxide thin films of SrRuO3 with single crystalline quality have been grown on (001) SrTiO3 by using pulsed laser deposition. The films have a [00l] orientation with an in-plane relationship of [110]SrRuO3 // [100]SrTiO3. They have excellent metallic behavior with room temperature resistivity of ∼310 μΩ cm and a residual resistance ratio of about 7 at 4.2 K, the largest reported to date. A clear ferromagnetic transition at ∼147 K was detected by resistivity and magnetic measurements. However, the transition becomes blurred as the density-of-point defects increases in the films following a 400 keV proton irradiation with an accumulative dose up to ∼6.0×1016 ions/cm2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119723
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3089-3091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011–1015 ions/cm2) of 200 keV Ar+ ions. The implanted samples were examined by ion channeling and x-ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013 ions/cm2. In this low dose implantation regime, the magnetoresistance {MR=[R(0)−R(H)]/R(0)} increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013 ions/cm2, the damage was significant and caused the sample to become semiconducting. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117314
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial ferroelectric Ba0.5Sr0.5TiO3 thin films for room-temperature tunable element applications (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 412-414 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Perovskite Ba0.5Sr0.5TiO3 thin films have been synthesized on (001) LaAlO3 substrates by pulsed laser ablation. Extensive x-ray diffraction, rocking curve, and pole-figure studies suggest that the films are c-axis oriented and exhibit good in-plane relationship of 〈100〉BSTO//〈100〉LAO. Rutherford backscattering spectrometry studies indicate that the epitaxial films have excellent crystalline quality with an ion beam minimum yield χmin of only 2.6%. The dielectric property measurements by the interdigital technique at 1 MHz show room-temperature values of the relative dielectric constant, cursive-epsilonr, and loss tangent, tan δ, of 1430 and 0.007 with no bias, and 960 and 0.001 with 35 V bias, respectively. The obtained data suggest that the as-grown Ba0.5Sr0.5TiO3 films can be used for development of room-temperature tunable microwave elements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124392
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...