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  • 1
    Electronic Resource
    Electronic Resource
    A study of 2H trapping in YBa2Cu2O7−δ /LaAlO3 〈100〉 samples under 2H+ irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4081-4084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A c-axis oriented YBa2Cu3O7−δ film, 180–230 nm thick, deposited onto 〈100〉 LaAlO3 by dc sputtering was irradiated at room temperature with 50 keV 2H+ (deuterium) ions to a dose of 1×1016 cm−2. Secondary-ion-mass spectroscopy analysis shows that after implantation the implanted 2H is trapped in both the film and the substrate. For example, when the thickness of the YBCO film is equal to ∼180 nm, it contains about 4.5% of the retained dose. The as-implanted 2H distribution is essentially Gaussian-like and the depth (Rˆp) of maximum 2H concentration is ∼485 nm. It is obvious that the target crystallinity has to be taken into account for the range data, since the experiment values (Rˆp,R¯p, and ΔRp) are obviously larger than the corresponding values from the transport of ions in matter code. This implantation makes the YBa2Cu3O7−δ film more granular. Within the irradiated LaAlO3 substrate, a damaged band was observed by cross-sectional transmission electron microscopy, which was centered at about 85% of Rˆp(exp).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357005
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  • 2
    Electronic Resource
    Electronic Resource
    A study of 2H trapping and release in 2H+-irradiated YBa2Cu3O7−δ /MgO〈100〉 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 344-352 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film sample of YBa2Cu3O7−δ on MgO was irradiated at room temperature with 50-keV 2H+ (deuterium) to a dose of 1×1016 ions cm−2. The film was mainly c-axis textured film, ∼360–420 nm thick, deposited by sputtering on 〈100〉 MgO substrate. The as-implanted sample was divided into several pieces and annealed in a flowing oxygen ambient using (i) a rapid thermal annealing oven, at various temperatures between 450 and 940 °C, and (ii) a conventional annealing furnace, at various temperatures between 100 and 350 °C. Analysis by secondary-ion mass spectroscopy shows that the implanted 2H is a fast diffuser in the 123 phase. The apparent activation temperature (energy) for 2H release from the initial traps within the YBCO film during the anneal is estimated to be ∼175 °C (∼0.97 eV), which is obviously lower than the apparent activation temperature (energy) for 2H release from the initial traps within the MgO substrate (∼550 °C, i.e., ∼1.78 eV). At 200 °C the diffusivity of 2H in the YBCO film is estimated to be ∼1.4×10−13 cm2/s. In the irradiated MgO, during the anneal the migration and release of 2H is thought to be radiation enhanced around the higher damage region. No diffusional broadening or diffusion tail toward the deeply undamaged region was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360681
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  • 3
    Electronic Resource
    Electronic Resource
    Doping silver into YBa2Cu3O7−δ films by 800 keV Ag+ implantation at room temperature and elevated temperatures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3029-3031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films (∼0.43 and ∼0.95 μm thick) of YBa2Cu3O7−δ on (100) LaAlO3 substrates have been implanted with 800 keV Ag+ to a dose of 5×1014/cm2, at room temperature (i.e., the total range (approximate)0.4 μm and the damage level (approximate)3.1 displacements per atom) and at elevated temperatures (450, 650, and 780 °C), followed by an in situ annealing schedule in flowing oxygen ambient. We have found that the implantation at room temperature amorphizes the implanted layer. In such a case, the implanted layer cannot regrow to the superconducting phase if there is no crystal seed remaining in the bottom of the film, whereas implantation at elevated temperatures plus an in situ annealing schedule, including a step at 870 °C in flowing oxygen ambient, can maintain the crystal structure and superconductivity of the films. For the thicker film, we have found that after the implantation at 450 or 650 °C and the in situ annealing, the total volume of the film has recovered to the superconducting 123 phase with a Tc=89 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118739
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  • 4
    Electronic Resource
    Electronic Resource
    Secondary ion mass spectroscopy study of Au trapping and migration in the Au-irradiated YBa2Cu3O7−δ film (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2738-2740 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range data and migration of Au in YBa2Cu3O7−δ film were studied with implanted 197Au (1.5 MeV 5×1015 Au+/cm2) as a tracer. The film was a c-axis oriented film, ∼750 nm thick, deposited by high-pressure planar dc sputtering on 〈100〉 LaAlO3. Analysis by secondary ion mass spectroscopy shows that the as-implanted Au concentration distribution is essentially Gaussian-like and the depth (Rˆp) of maximum Au concentration (∼1.2 wt %) is 201 nm. The projected range (R¯p) and (Rˆp) are found to be in very good agreement with the simulated data by TRIM−95, whereas the measured "straggle'' (ΔRp*) is about 20% larger than that by TRIM−95 simulation. It has also been found that the implanted 197Au starts to migrate within the film at a temperature between 650 and 700 °C, which is much higher than that for the implanted 2H (∼175 °C) and the implanted 18O (between 250 and 300 °C) in c-oriented YBa2Cu3O7−δ films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115582
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  • 5
    Electronic Resource
    Electronic Resource
    Oxygen isotopic exchange between an 18O+ implanted Si layer and a natural SiO2 capping layer during high-temperature annealing (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2812-2814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To understand the effects of the SiO2 capping layer on the growing buried SiO2 layer a silicon wafer was implanted at 680 °C with 90 keV 18O+ to a dose of 4.3×1017 18O+/cm2. After the deposition of an ∼500 nm natural SiO2 cap by the plasma sputtering, one piece of the implanted wafer was annealed at 1360 °C for 6 h in a quartz silica tube in flowing nitrogen. There is clear evidence of diffusional mixing of the oxygen isotopes from the cap into the 18O+ implanted layer during this annealing step, indeed a surprisingly large amount has taken place, in that approximately 41% of 18O contained within the buried SiO2 layer has been exchanged with the cap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110295
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of Ne+ implantation and rapid thermal annealing on the microstructure and electrical properties of YBCO thin films (1996)
    Springer
    Journal of materials science 15 (1996), S. 1836-1838 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00264070
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure and electrical properties of YBCO thin films (1995)
    Springer
    Journal of materials science 30 (1995), S. 3968-3972 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Microstructures of c-axis oriented YBCO thin films made by high-pressure d.c. sputtering on LaAlO3 and MgO substrates were examined by TEM. The a-axis oriented grains, second phases and micro-twins were frequently observed in the film. The a-axis oriented grains expanded along their c-axis directions during film growth. The a- and b-axis misorientations were observed in the film on MgO due to serious lattice mis-match between YBCO and MgO. The second phases were often accompanied with a-axis oriented grains suggesting they act as nuclei. These observed results were correlated with the measured T c and J c of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00360695
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  • 8
    Electronic Resource
    Electronic Resource
    Effects of 50 keV2H+-ion implantation and rapid thermal annealing on the microstructure of YBCO thin films (1995)
    Springer
    Journal of materials science 30 (1995), S. 5927-5930 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A YBCO film with thickness of about 200 nm was deposited on LaAlO3[100] by direct current (d.c.) sputtering. The film, which was found to be mainlyc-axis orientated, was irradiated at room temperature with 50 keV2H+ ions to a dose of 1×1016 cm−2. This implantation destroyed the superconductivity and made the film textured, with the “epitaxial” crystalline structure of the film being mainly maintained. Transmission electron microscope studies show that there are a considerable number of amorphous islands, which are Y rich and Cu poor compared with the 123 phase in the as-received YBCO film. These amorphous islands are found to be unstable under the irradiation, as after implantation some polycrystalline regions, rather than amorphous islands, can be seen by TEM. Rapid thermal annealing in flowing O2 ambient can induce oxygen reordering and results in partial recovery of critical temperature,T c . After RTA, the polycrystalline regions have not changed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01151507
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of YBa2Cu3O7−δ thin films deposited by dc magnetron sputtering (1996)
    Springer
    Journal of materials science 31 (1996), S. 6137-6144 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract It was found from plan-view transmission electron microscopy (TEM) observations that c-oriented YBa2Cu3O7−δ (YBCO) films on LaAlO3, prepared by the magnetron sputtering technique had a single crystalline-like YBCO matrix, but always contained some precipitates of impurity phases. A large number of highly defective twin boundaries were also observed in all of these epitaxial films. Such highly defective twin boundaries are thought to be flux pinning centres and also paths for the diffusion of water into YBCO films. Therefore the films need to be passivated against attack from humid air.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00354430
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