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Plasma diagnostics in pulsed laser TiN layer deposition (1995)

Hermann, J. ; Thomann, A. L. ; Boulmer-Leborgne, C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 2928-2936

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Time- and space-resolved emission and laser-induced fluorescence spectroscopic measurements were performed to investigate vaporization and plasma formation resulting from excimer laser irradiation of titanium targets in a low-pressure nitrogen atmosphere. Measurement series have been done by varying the laser intensity from the vaporization threshold at 25 MW cm−2 up to values of about 500 MW cm−2 typically applied in pulsed laser deposition processing of titanium nitride films. Thus, the transition from thermal evaporation to the high-density plasma formation process, leading to the production of reactive species and high-energy ions, was evidenced. An interesting result for the comprehension of the reactive deposition process was the observation of a quantity of dissociated and ionized nitrogen, which is transported with the plasma front in the direction of the substrate. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358708

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Laser reactive ablation deposition of silicon-nitride films (1995)

De Giorgi, M. L. ; Leggieri, G. ; Luches, A. ; [et al.]

Springer

Applied physics 60 (1995), S. 275-283

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ISSN: 1432-0630

Keywords: PACS: 42.55.Gp; 68.55; 81.15.Fg

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract. Silicon-nitride films were deposited on silicon wafers by XeCl (308 nm) excimer-laser ablation of silicon in low-pressure (0.05 – 5 mbar) ammonia atmospheres. Series of 10 000 pulses at the repetition rate of 8 Hz were directed to the target surface. The fluence was set at about 5 J/cm2. Pulse duration was about 30 ns. The deposited films were characterized by different techniques (X-ray diffraction, X-ray photoelectron spectroscopy, Auger electron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, profilometry). Silicon-nitride films with thickness close to 1 µm were obtained under specific experimental conditions.