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Asymmetric high temperature superconducting Josephson vortex-flow transistors with high current gain (1995)

Gerdemann, R. ; Bauch, T. ; Fröhlich, O. M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 1010-1012

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have fabricated Josephson vortex-flow transistors (JVFTs) based on asymmetric parallel arrays of YBa2Cu3O7−δ bicrystal grain boundary junctions. The critical current Ic and the voltage V at fixed bias current Ib were measured as a function of the control current Ictrl through a control line inductively coupled to the array. For JVFTs with an asymmetric in-line geometry a high current gain g=∂Ic/∂Ictrll ranging between about 20 at 40 K and 14 at 70 K was achieved. This current gain is much higher than that obtained for symmetric devices and results from the self-field effect of the electrode currents. In contrast to the current gain the transresistance rm=∂V/∂Ictrl of the JVFTs could not be enhanced by an asymmetric device structure. The current-voltage characteristics of the asymmetric JVFTs show pronounced step-like structures caused by the self-field of the electrode currents. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114713

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