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  • 1
    Electronic Resource
    Electronic Resource
    Dry-etching processes for high-temperature superconductors
    Amsterdam : Elsevier
    Physica C: Superconductivity and its applications 200 (1992), S. 277-286 
    Details
    ISSN: 0921-4534
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4534(92)90378-P
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  • 2
    Electronic Resource
    Electronic Resource
    A hidden pseudogap under the ‘dome’ of superconductivity in electron-doped high-temperature superconductors (2003)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 422 (2003), S. 698-701 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The ground state of superconductors is characterized by the long-range order of condensed Cooper pairs: this is the only order present in conventional superconductors. The high-transition-temperature (high-Tc) superconductors, in contrast, exhibit more complex phase behaviour, which ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature01488
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic-field-effect three-terminal device based on YBa2Cu3O7−δ grain boundary junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1843-1845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-terminal YBa2Cu3O7−δ thin film devices based on a parallel array of grain boundary Josephson junctions were fabricated. The multiloop superconducting device is controlled by the magnetic field generated by a current Ictrl, which modulates the critical current Ic through the Josephson junction array. For these devices a current gain ranging between 2 at 77 K and 5 at 30 K was obtained. The spatial homogeneity of the device properties was studied by low-temperature scanning electron microscopy and by the determination of the supercurrent correlation function. Comparing the measured and the theoretically expected supercurrent correlation function shows that the device characteristics agree well with those expected from the device geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356326
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  • 4
    Electronic Resource
    Electronic Resource
    Spatially resolved analysis of high-Tc grain boundary Josephson junctions and arrays (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8005-8015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Low Temperature Scanning Electron Microscopy (LTSEM) we have studied the spread of the critical current values in one- and two-dimensional arrays of high-Tc grain boundary Josephson junctions (GBJs). For series arrays the critical current values and the magnetic field dependences of all GBJs within the array could be imaged by LTSEM. Our measurements showed that part of the spread of the critical current values derived from measurements of the current-voltage characteristics is caused by variations of the local magnetic field at the junction position. For bicrystal GBJs a Gaussian distribution of the critical current values with a spread as small as ±20% was found. For the investigated step-edge and biepitaxial GBJs the spread of the critical current values was considerably larger. The LTSEM technique also was used to study the spatial homogeneity of the critical current density of the different types of YBa2Cu3O7−δ grain boundary Josephson junctions with a spatial resolution of 1μm. Whereas the critical current density of bicrystal GBJs showed only small variations on this length scale, strong inhomogeneities were found for step-edge and biepitaxial GBJs. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357918
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  • 5
    Electronic Resource
    Electronic Resource
    Spin-dependent transport in the double-perovskite Sr2CrWO6 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3654-3656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the preparation and characterization of the double-perovskite compound Sr2CrWO6 with a Curie temperature of 390 K. We have fabricated both Sr2CrWO6 bulk sintered polycrystalline bars and high-quality epitaxial thin films on SrTiO3 substrates by pulsed-laser deposition. The samples were characterized by thermogravimetric analysis, x-ray diffraction, electrical transport, and magnetization measurements. Polycrystalline samples containing a large number of grain boundaries show a large low-field magnetoresistance of up to 100% at 5 K. At room temperature, this effect is reduced to a few percent. Our results show that Sr2CrWO6 is an interesting candidate for room-temperature magnetoelectronic materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1421227
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  • 6
    Electronic Resource
    Electronic Resource
    Strain effects and microstructure of epitaxial manganite thin films and heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3636-3638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial La2/3Sr1/3MnO3 (LSMO) and La2/3Ba1/3MnO3 (LBMO) thin films as well as La2/3Ba1/3MnO3/SrTiO3 heterostructures by pulsed-laser deposition. The microstructure of the films was analyzed by x-ray diffraction and transmission electron microscopy. A significant effect of strain due to lattice mismatch was found. Whereas the thick LBMO films show perfect epitaxy and grow coherently strained over the full film thickness, the LSMO films were found to be composed of two layers separated by an intrinsic interface region containing a high density of defects. The approximately 60 nm thick bottom layer grows coherently on the SrTiO3 (STO) substrate and is highly strained, whereas the top layer is almost strain free. The LBMO/STO heterostructures are coherently strained and show a very low density of defects and sharp interfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123206
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  • 7
    Electronic Resource
    Electronic Resource
    Analysis of the critical current density in grain boundary Josephson junctions on a nanometer scale (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2289-2291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current Ic of YBa2Cu3O7−δ bicrystal grain boundary Josephson junctions (GBJs) have been measured in high magnetic fields up to B=12 T. Even at the highest applied magnetic fields, Ic varied periodically with varying magnetic field. By comparing the envelope of the measured Ic(B) dependencies to model calculations we obtain information on the spatial distribution of the supercurrent density jc on a length scale down to below 1 nm. Our analysis gives clear evidence that jc has spatial inhomogeneities on all length scales down to 1 nm with a probability distribution p(a) for the characteristic length scale a of the inhomogeneities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113263
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  • 8
    Electronic Resource
    Electronic Resource
    Superconducting transport properties of Bi2Sr2CaCu2O8+x bicrystal grain boundary junctions (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 996-998 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed study of the superconducting transport properties of Bi2Sr2CaCu2O8+x bicrystal grain boundary junctions (GBJs). The GBJs were fabricated by the deposition of c-axis oriented epitaxial Bi2Sr2CaCu2O8+x films on SrTiO3 bicrystal substrates. The measured resistive transition R(T), the current-voltage characteristics (IVCs), the temperature dependence of the critical current density Jc(T), and the magnetic field dependence of the critical current Ic(B) of the Bi2Sr2CaCu2O8+x GBJs are similar to those observed for YBa2Cu3O7−δ GBJs. However, for the same misorientation angle the magnitude of Jc is almost an order of magnitude smaller for the BSCCO-GBJs. The R(T) dependencies and the IVCs of the BSCCO-GBJs are close to the prediction of the resistively shunted junction (RSJ) model. The Ic(B) dependencies are close to those of large Josephson junctions with overlap geometry. Our results show that BSCCO-GBJs may be useful for cryoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109818
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic field dependence of the critical current in YBa2Cu3O7−δ bicrystal grain boundary junctions (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 783-785 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed study of the magnetic field dependence of the critical current, Ic(B), of YBa2Cu3O7−δ bicrystal grain boundary junctions (GBJs). GBJs with width W much larger than the Josephson penetration depth λJ show Ic(B) dependencies that are close to those of ideal large Josephson junctions with overlap geometry. The Ic(B) dependencies are symmetrical with respect to B=0 and Ic decreases linearly with increasing applied magnetic field for B≤BJ1, where BJ1 is the lower critical field of the GBJ. Furthermore, Ic(B=0) increases linearly with increasing width of the GBJs as expected for Josephson junctions with overlap geometry. From the measured Ic(B) dependencies the temperature dependence of BJ1 and the London penetration depth could be derived.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108578
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  • 10
    Electronic Resource
    Electronic Resource
    Asymmetric high temperature superconducting Josephson vortex-flow transistors with high current gain (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1010-1012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Josephson vortex-flow transistors (JVFTs) based on asymmetric parallel arrays of YBa2Cu3O7−δ bicrystal grain boundary junctions. The critical current Ic and the voltage V at fixed bias current Ib were measured as a function of the control current Ictrl through a control line inductively coupled to the array. For JVFTs with an asymmetric in-line geometry a high current gain g=∂Ic/∂Ictrll ranging between about 20 at 40 K and 14 at 70 K was achieved. This current gain is much higher than that obtained for symmetric devices and results from the self-field effect of the electrode currents. In contrast to the current gain the transresistance rm=∂V/∂Ictrl of the JVFTs could not be enhanced by an asymmetric device structure. The current-voltage characteristics of the asymmetric JVFTs show pronounced step-like structures caused by the self-field of the electrode currents. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114713
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