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  • 1
    Electronic Resource
    Electronic Resource
    Spatially resolved analysis of high-Tc grain boundary Josephson junctions and arrays (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8005-8015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Low Temperature Scanning Electron Microscopy (LTSEM) we have studied the spread of the critical current values in one- and two-dimensional arrays of high-Tc grain boundary Josephson junctions (GBJs). For series arrays the critical current values and the magnetic field dependences of all GBJs within the array could be imaged by LTSEM. Our measurements showed that part of the spread of the critical current values derived from measurements of the current-voltage characteristics is caused by variations of the local magnetic field at the junction position. For bicrystal GBJs a Gaussian distribution of the critical current values with a spread as small as ±20% was found. For the investigated step-edge and biepitaxial GBJs the spread of the critical current values was considerably larger. The LTSEM technique also was used to study the spatial homogeneity of the critical current density of the different types of YBa2Cu3O7−δ grain boundary Josephson junctions with a spatial resolution of 1μm. Whereas the critical current density of bicrystal GBJs showed only small variations on this length scale, strong inhomogeneities were found for step-edge and biepitaxial GBJs. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357918
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  • 2
    Electronic Resource
    Electronic Resource
    Distribution of the critical current density and flux trapping in YBa2Cu3O7−δ ramp-edge Josephson junctions (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 241-243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the spatial distribution of the critical current density in YBa2Cu3O7−δ ramp edge Josephson junctions using low-temperature scanning electron microscopy. Applying this technique allows the imaging of the critical current density distribution with a spatial resolution of about 1 μm. Our measurements show that the geometry of the ramp-edge junction eases the trapping of magnetic flux quanta in the YBa2Cu3O7−δ layer covering the ramp edge. These trapped flux quanta result in a spatially inhomogeneous magnetic field parallel to the barrier layer, which in turn results in a spatially modulated supercurrent density and an unusual magnetic field dependence of the critical current.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111516
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  • 3
    Electronic Resource
    Electronic Resource
    Spatially resolved electrical characterization of a YBa2Cu3O7−δ flux transformer (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2871-2873 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the spatially resolved transport properties of a three-layer YBa2Cu3O7−δ flux transformer using low-temperature scanning electron microscopy. The seven-turn spiral coil is fabricated using a crossover technology with SrTiO3 as an insulator. The different layers were patterned with shadow masks or optical lithography. We show that the insulating SrTiO3 film has no shorts and that the overlaying YBa2Cu3O7−δ spiral reveals a reduced zero resistance critical temperature at the steps and edges of the insulator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109185
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  • 4
    Electronic Resource
    Electronic Resource
    Efficient solar energy conversion with CuInS 2 (1986)
    [s.l.] : Nature Publishing Group
    Nature 321 (1986), S. 687-688 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Samples with increased In excess exceeding the single-phase region in the phase diagram12 were prepared. CuInS2 was synthesized from the elements (6 N/Ventron) in a mole ratio of 0.95, 1.05 and 2, respectively. In the growth process, the molten Cu-In alloy reacted with S at T= 1,175 C to yield the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/321687a0
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  • 5
    Electronic Resource
    Electronic Resource
    Development of solar cell material by PAC:111In probes in CuInS2 and related phases (1990)
    Springer
    Hyperfine interactions 60 (1990), S. 805-808 
    Details
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Using metallic indium doped with radioactive111In as one of the starting materials samples of stoichiometric CuInS2, CuInS2 with excess of indium and sulphur, and stoichiometric CuIn5S8 were prepared. Perturbed angular correlations of γ rays emitted by111Cd are utilized to analyse the produced crystalline phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02399874
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  • 6
    Electronic Resource
    Electronic Resource
    Electronic defects in heterogeneous CuInS2 (1986)
    Springer
    Journal of materials science 21 (1986), S. 4419-4423 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The difference in photoactivity between CuInS2 crystals grown by chemical vapour transport (CVT) and new heterogeneous material containing phases of Cu2−x S and In2S3 in the mol % range is analysed. Photoluminescence, time resolved microwave conductivity (TRMC) experiments and photocurrent spectroscopy demonstrate a strongly reduced defect density in the heterogeneous samples. EBIC analyses show the terraces occurring from vapour-liquid-solid (VLS) growth of the heterogeneous material to act as recombination sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01106565
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