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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 8077-8079 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on experimental results with three-terminal superconductor/semiconductor hybrid junctions, which are based on the two-dimensional electron gas at the surface of p-type InAs. A short distance ((approximate)150 nm) between superconducting Nb contacts is obtained using a step geometry. The step geometry allows the realization of different heterostructure potential profiles along the two-dimensional channel. The critical current of the step junctions can be controlled by applying a voltage to highly doped (δ-doped) layers embedded in the heterostructure. With p-δ-doped layers, a p-n junction is introduced in the two-dimensional channel and an asymmetric change of the critical current with respect to the gate voltage or gate current is observed. With n-δ-doped layers, the change is symmetrical. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 515-517 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first measurements of subpicosecond dynamics of carrier capture and decay in Be δ-doped GaAs structures with p-doping density ranging from 6×1012 to 2×1014 cm−2 and spatial distribution on monolayer scale show that photoexcited carriers are captured in the δ-doped layer in 〈1 ps. Luminescence decay rates show a strong dependence on energy of the hole in the two-dimensional Fermi gas. We attribute this to a change in the spatial electron-hole overlap resulting from band-mixing effects. We show that Be density fluctuations lead to strong carrier localization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 106 (1997), S. 321-326 
    ISSN: 1573-7357
    Keywords: 74.50.+r ; 73.25.+i ; 73.40.Sx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Experimental results for novel superconductor/semiconductor hybrid systems are presented. The junctions have a step-like geometry, employing two Nb electrodes which are evaporated onto a step that is etched in InAs. Such a geometry allows one to fabricate short weak links (approximately 200nm) as well as to realize a variety of heterostructure potential profiles along the channel between the superconducting electrodes, since this channel is oriented parallel to the growth direction of the heterostructure. Different semiconductor heterostructures, such as low p-doped InAs, whose native surface inversion layer has the character of a two-dimensional electron gas (2DEG), or npn-InAs heterostructures, where th 2DEG of a thin (150nm) p-layer is sandwiched between two n-InAs layers, are used. By measuring the currentvoltage characteristics at 4.2K, supercurrents, subharmonic gap structures, as well as excess currents, are observed.
    Type of Medium: Electronic Resource
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