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  • 1995-1999  (10)
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  • 1
    Electronic Resource
    Electronic Resource
    Postgrowth annealing effects of TiO2 thin films grown on InP substrate at low-temperature by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4459-4461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x-ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361757
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  • 2
    Electronic Resource
    Electronic Resource
    Sulfur and hydrogen passivation effects on thermal stability of RuO2 Schottky contact on n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4276-4278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of sulfur and hydrogen passivation on the thermal stability of RuO2 Schottky contacts on n-type GaAs have been studied by treatments with (NH4)2Sx solution and hydrogen plasma, respectively. The RuO2 thin films were deposited by dc magnetron sputtering using a Ru target and a mixture of argon and oxygen gases. The thermal stability of RuO2 Schottky contacts during thermal annealing in the temperature range from 200 to 550 °C for 10 min was investigated by current-voltage (I–V) measurements and Auger electron spectroscopy. For the sulfur treated sample, the ideality factor was constant at about 1.01 in the whole temperature range and the barrier height of 0.84 eV was maintained up to 350 °C. Hydrogenation treatment, however, was not so effective in preventing the thermal degradation compared to the sulfurization process. It is confirmed that the effective sulfur passivation to enhance the thermal stability of RuO2/GaAs is responsible for the suppression of an oxidation in the interface between GaAs and RuO2. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359826
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  • 3
    Electronic Resource
    Electronic Resource
    Visible luminescences from thermally grown silicon dioxide thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3402-3404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce visible photoluminescences (PL) of violet (432 nm) and yellow (561 nm) at room temperature from thermally treated silicon dioxide thin films. These luminescences were very strong with a near infinite degradation time. At an oxide layer thickness less than 200 nm, these luminescences were not seen, even with high temperature annealing at about 1000 °C. As a result of photoluminescence, x-ray photoelectron spectroscopy, Fourier transform infrared, and high-resolution transmission electron microscopy measurements, we conclude that the violet PL originates from the nanocrystalline silicon formed in the silicon oxide film by the thermal strain effect between the silicon substrate and the silicon dioxide film, while the yellow PL originates from the radiative decay of self-trapped excitons that are confined to oxygen sufficient structures. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117273
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2519-2523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of atomic bond structure at the deposition surface on the crystallographic orientation dependence of carbon doping in GaAs was studied. Carbon doping into GaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using extrinsic carbon sources of carbon tetrachloride (CCl4) and carbon tetrabromide (CBr4). Epitaxial growths were done on the exact (100) and four different misoriented GaAs substrates with orientations of (511)A, (311)A, (211)A, and (111)A. The electrical properties were measured by van der Pauw Hall analysis at room temperature. Electrically active concentrations in excess of 1×1019 cm−3 were obtained so that 4 and CBrCCl4 were demonstrated as efficient p-type dopant sources for carbon doping into GaAs. The dependence of hole concentration on the offset angle of CCl4-doped and CBr4-doped GaAs shows the same tendency, whereas the trend of carbon doping from intrinsic carbon doping technique is different from our results. In particular, the hole concentration on the (100) surface is higher than that on the (111)A surface in the cases of CCl4 and CBr4. The result is opposite to that of the intrinsic doping case. A model based on the atomic bond structure of an adsorption site of carbon-containing species is proposed to explain the difference. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367013
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  • 5
    Electronic Resource
    Electronic Resource
    Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1205-1207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of CBr4-doped GaAs and Al0.3Ga0.7As epilayers grown on GaAs substrates with various surface crystallographic orientations from (100) toward (111)A were investigated. Carbon incorporation into GaAs and AlGaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of the epilayers showed a strong crystallographic orientation dependence. With an increase of the surface offset angle, the hole concentration of CBr4-doped GaAs and AlGaAs epilayers rapidly decreased showing a hump at (311)A. The trend of the hole concentration dependence on the offset angle was not changed with growth temperatures in the range of 550–650 °C. Carbon incorporation is much higher in AlGaAs than in GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366264
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  • 6
    Electronic Resource
    Electronic Resource
    Selective formation of one- and two-dimensional arrayed InGaAs quantum dots using Ga2O3 thin film as a mask material (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2479-2481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the selective formation of InGaAs quantum dots (QDs) by molecular beam epitaxy. Nanoscale patterned Ga2O3 thin film deposited on the GaAs (100) substrate was employed as a mask material. Due to the enhanced migration effect of the group-III adatoms, such as Ga and In on Ga2O3 mask layer, the InGaAs QDs formed on the patterned substrate results in coalesced islands unlike those formed on the nonpatterned substrate. The estimation of the relative volume of the islands per unit area revealed that the desorption process as well as the migration of the Ga and In adatoms might occur on the Ga2O3 layer during the growth process, providing a good selective growth of self-assembled QDs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122488
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  • 7
    Electronic Resource
    Electronic Resource
    Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have confirmed the direct formation of nanosized crystalline silicon during the deposition of amorphous silicon layers by electron cyclotron resonance chemical vapor deposition (ECRCVD) on silicon and silicon–dioxide substrates. Two photoluminescence (PL) peaks at 680 and 838 nm were observed at room temperature from the samples. From cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements, it was confirmed that nanosize silicon crystallites of 3–5 nm in diameter were randomly distributed throughout the amorphous silicon layer. Theoretical calculations using quantum size effects gave an average crystalline size of 4 nm which was consistent with the PL peak energy at 680 nm obtained from the sample. Also, the size of the crystallites could be controlled by the change of the substrate temperature during the deposition process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118734
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  • 8
    Electronic Resource
    Electronic Resource
    Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 815-817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lateral growth rate of GaAs is remarkably increased with supplying CBr4, which has been utilized as a p-type dopant source for carbon doped GaAs epilayers during metalorganic chemical vapor deposition growth. The lateral growth rate can be represented as a linear function of the CBr4 flow rate, while the GaAs vertical growth rate is relatively insensitive to the CBr4 flow rate. The maximum ratio of the lateral to vertical growth rate by CBr4 is about 29. With increasing the growth temperature, the lateral growth rate increases, but it decreases at a more elevated growth temperature than 700 °C. These results are also compared to the previous results obtained by CCl4. In all cases the lateral growth rate increments by CBr4 are larger than those by CCl4. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117901
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  • 9
    Electronic Resource
    Electronic Resource
    Improvement of carrier capture efficiency of short-period GaAs/AlGaAs quantum wire array by a new lithography method (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 955-956 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period GaAs/AlGaAs quantum wire array (QWA) was fabricated by metalorganic chemical vapor deposition on the GaAs substrate with submicron gratings. A strong photoluminescence signal derived from highly dense QWA was detected in the as-grown sample. To identify the signal more clearly, all the layers except QWR regions should be removed. However, the small dimension of the sample made it difficult to do that with conventional lithography techniques. We have developed a novel lithography technique which can be applied to nonplanar structures. We could completely remove the (100) and the (111)A quantum well (QW) layers using the technique. As a result, we could clearly observe the optical properties of short-period QWA by improving the carrier capture efficiency of QWR regions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117093
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  • 10
    Electronic Resource
    Electronic Resource
    Violet/blue light-emitting cerium silicates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2389-2391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed violet/blue light emitted from cerium silicates which may be useful for silicon-based optoelectronics. The cerium silicate was produced during a rapid thermal annealing at high temperature (〉1100 °C) from the interface between silicon substrate and cerium oxide film. Detailed experiments including x-ray diffraction, high-resolution transmission electron microscope, and Auger depth profiling showed that the cerium silicate consists of Ce4.667(SiO4)3O and Ce2Si2O7 phases. The photoluminescence of the cerium silicate is very strong at room temperature. Specifically, the 358 nm luminescence line is attributed to the Ce2Si2O7 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125023
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