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  • 1
    Digitale Medien
    Digitale Medien
    Visible luminescences from thermally grown silicon dioxide thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3402-3404 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We introduce visible photoluminescences (PL) of violet (432 nm) and yellow (561 nm) at room temperature from thermally treated silicon dioxide thin films. These luminescences were very strong with a near infinite degradation time. At an oxide layer thickness less than 200 nm, these luminescences were not seen, even with high temperature annealing at about 1000 °C. As a result of photoluminescence, x-ray photoelectron spectroscopy, Fourier transform infrared, and high-resolution transmission electron microscopy measurements, we conclude that the violet PL originates from the nanocrystalline silicon formed in the silicon oxide film by the thermal strain effect between the silicon substrate and the silicon dioxide film, while the yellow PL originates from the radiative decay of self-trapped excitons that are confined to oxygen sufficient structures. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117273
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  • 2
    Digitale Medien
    Digitale Medien
    Positively charged states of a hydrogen atom in p-type InP (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1558-1560 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: It has been demonstrated that atomic hydrogen drifts as a charged state in p-type InP and the presence of a high-electric field strongly affects the dissociation of the hydrogen-acceptor complex. During reverse-bias anneal experiments on the n+-p diode, it is confirmed that a charged hydrogen is accelerated out the high-field region below the breakdown voltage. The dissociation frequencies dependent on the applied bias voltage increase from 5.6×10−6 to 2.3×10−5 s−1 at 150 °C as the bias voltage is increased from 3 to 9 V. The dissociation energies calculated from the first-order kinetics are in the ranges of 1.58–1.40 eV, at 3–7 V annealing. It is proposed that atomic hydrogen in Zn-doped p-type InP exposed to the plasma hydrogen could be positively charged and strongly passivates the charged Zn acceptor, and also the hydrogen of the hydrogen-Zn acceptor complex can be released with the help of minority carriers or/and the loss of the charged hydrogen atom by the electric field.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110748
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  • 3
    Digitale Medien
    Digitale Medien
    Hydrogenation effects on n+-p InP solar cell (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1280-1282 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The hydrogenation effects on the solar cell property have been investigated in the sulfur (S) diffused n+-p solar cell. In the plasma-hydrogenated n+-p junction at 150 °C for 30 min, the carrier concentration of p-type substrate (Zn doped) decreased by one order of magnitude as the distance from the junction region becomes 0.7 μm. This indicates that the hydrogen passivation by atomic hydrogen is due to the form of the neutral hydrogen-Zn acceptor complex near the junction region. The InP solar cell properties, especially the conversion efficiency and the short circuit current of the solar cell, were remarkably improved by 150 °C hydrogenation. The mechanism for the hydrogen passivation effects on the InP solar cell is also discussed. It is shown that the increase of the solar cell efficiency and short circuit current after hydrogenation may be due to the formation of the n+-p−-p structure by the hydrogen-defect incorporation and adequate control of the carrier density in the p-type substrate.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.110865
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  • 4
    Digitale Medien
    Digitale Medien
    Direct formation of nanocrystalline silicon by electron cyclotron resonance chemical vapor deposition (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have confirmed the direct formation of nanosized crystalline silicon during the deposition of amorphous silicon layers by electron cyclotron resonance chemical vapor deposition (ECRCVD) on silicon and silicon–dioxide substrates. Two photoluminescence (PL) peaks at 680 and 838 nm were observed at room temperature from the samples. From cross-sectional high-resolution transmission electron microscopy (HRTEM) measurements, it was confirmed that nanosize silicon crystallites of 3–5 nm in diameter were randomly distributed throughout the amorphous silicon layer. Theoretical calculations using quantum size effects gave an average crystalline size of 4 nm which was consistent with the PL peak energy at 680 nm obtained from the sample. Also, the size of the crystallites could be controlled by the change of the substrate temperature during the deposition process. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.118734
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  • 5
    Digitale Medien
    Digitale Medien
    Violet/blue light-emitting cerium silicates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2389-2391 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We observed violet/blue light emitted from cerium silicates which may be useful for silicon-based optoelectronics. The cerium silicate was produced during a rapid thermal annealing at high temperature (〉1100 °C) from the interface between silicon substrate and cerium oxide film. Detailed experiments including x-ray diffraction, high-resolution transmission electron microscope, and Auger depth profiling showed that the cerium silicate consists of Ce4.667(SiO4)3O and Ce2Si2O7 phases. The photoluminescence of the cerium silicate is very strong at room temperature. Specifically, the 358 nm luminescence line is attributed to the Ce2Si2O7 phase. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.125023
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