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  • 1
    Electronic Resource
    Electronic Resource
    Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3705-3709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-cyclotron-resonance (ECR) and reactive ion etching (RIE) rates for GaN, AlN, InN, and InGaN were measured using the same reactor and plasma parameters in Cl2/Ar or CH4/H2/Ar plasmas. The etch rates of all four materials were found to be significantly faster for ECR relative to RIE conditions in both chemistries, indicating that a high ion density is an important factor in the etch. The ion density under ECR conditions is ∼3×1011 cm−3 as measured by microwave interferometry, compared to ∼2×109 cm−3 for RIE conditions, and optical emission intensities are at least an order of magnitude higher in the ECR discharges. It appears that the nitride etch rates are largely determined by the initial bond breaking that must precede etch product formation, since the etch products are as volatile as those of conventional III–V materials such as GaAs, but the etch rates are typically a factor of about 5 lower for the nitrides. Cl2/Ar plasmas were found to etch GaN, InN, and InGaN faster than CH4/H2/Ar under ECR conditions, while AlN was etched slightly faster in CH4/H2/Ar plasmas. The surface morphology of InN was found to be the most sensitive to changes in plasma parameters and was a strong function of both rf power and etch chemistry for ECR etching. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363320
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  • 2
    Electronic Resource
    Electronic Resource
    Si, Be, and C ion implantation in GaAs0.93P0.07 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2296-2299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation efficiencies of implanted Si, Be, and C in GaAs0.93P0.07 have been measured in the annealing range 650–950 °C. Be provides much higher sheet hole densities than C, even when the latter is coimplanted with Ar to enhance the electrical activity. The maximum activation efficiency of Be is ∼60% at a dose of 5×1014 cm2 whereas that of C is an order of magnitude lower. Si produces donor activation percentages up to ∼20% under optimized annealing conditions. Capless proximity annealing is adequate for surface preservation up to ∼950 °C, as measured by scanning electron microscopy and atomic force microscopy. Photoluminescence measurements provide evidence that nonradiative, damage-related point defects remain in the GaAsP even after annealing of 950 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363059
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  • 3
    Electronic Resource
    Electronic Resource
    The hydridation and nitridation of GeSi oxide annealed in ammonia (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2631-2634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 110-nm-thick Ge0.38Si0.62O2 film on Ge0.38Si0.62 was annealed in NH3 at 700 °C for 4 h and analyzed by Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy, and secondary-ion mass spectrometry. In the surface region of the oxide film, this annealing results in an incorporation of nitrogen bonded to germanium by the nitridation of GeO2. In the bottom region of the oxide film near the GeSi/oxide interface, elemental Ge appears. We attribute this process to the hydridation of GeO2 with hydrogen that comes from dissociated ammonia. Results obtained at 800 °C for a 380-nm-thick oxide film are similar. A model is proposed to explain the observed changes of the oxide after the ammonia annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360123
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  • 4
    Electronic Resource
    Electronic Resource
    GaInP/GaP partially ordered layer type-I strained quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4236-4238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type-I regions of ordered GaInP and type-II regions of disordered GaInP. Observation of photoluminescence at room temperature suggests that this QW may be useful as an active layer for laser structures grown on GaP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116956
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  • 5
    Electronic Resource
    Electronic Resource
    ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1426-1428 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron cyclotron resonance plasma etch rates for GaN, InN, InAlN, AlN, and InGaN were measured for a new plasma chemistry, ICl/Ar. The effects of gas chemistry, microwave and rf power on the etch rates for these materials were examined. InN proved to be the most sensitive to the plasma composition and ion density. The GaN, InN, and InGaN etch rates reached ∼13 000, 11 500, and ∼7000 A(ring)/min, respectively, at 250 W rf (−275 V dc) and 1000 W microwave power. The etched surface of GaN was found to be smooth, with no significant preferential loss of N from the surface at low rf powers, and no significant residue on the surface after etching. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117603
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  • 6
    Electronic Resource
    Electronic Resource
    Etching of InP at (approximately-greater-than)1 μm/min in Cl2/Ar plasma chemistries (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple Cl2/Ar plasma chemistry without additional sample heating is found to produce etch rates above 1 μm/min for InP under high microwave power (1000 W) electron cyclotron resonance conditions. While the etch rate increases essentially linearly with Cl2 composition the root-mean-square (RMS) surface roughness measured by atomic force microscopy is strongly dependent on the Cl2-to-Ar ratio. Under optimized conditions (10Cl2/5Ar), RMS roughness of ∼2.6 nm is obtained on samples etched more than 1 μm, a typical unetched control sample displays a RMS value of 1.3–1.6 nm. The high ion current under ECR conditions appears to promote efficient sputter desorption of the InCl3 etch product and prevents buildup of the usual selvedge layer that requires elevated sample temperatures to desorb under more conventional reactive ion etching conditions. The result is a simplified plasma chemistry with avoidance of the polymer deposition and hydrogen passivation associated with CH4/H2 discharges. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116553
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  • 7
    Electronic Resource
    Electronic Resource
    Minority-carrier-enhanced reactivation of hydrogen-passivated Mg in GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2690-2692 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of minority-carrier injection on the reactivation of hydrogen passivated Mg in GaN at 175 °C has been investigated in p-n junction diodes. The dissociation of the neutral MgH complexes is greatly enhanced in the presence of minority carrier and the reactivation process follows second-order kinetics. Conventional annealing under zero-bias conditions does not produce Mg-H dissociation until temperatures ≥450 °C. These results provide an explanation for the e-beam-induced reactivation of Mg acceptors in hydrogenated GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116310
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  • 8
    Electronic Resource
    Electronic Resource
    Dry etch damage in InN, InGaN, and InAlN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2329-2331 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in conductivity of InN, In0.5Ga0.5N, and In0.5Al0.5N layers exposed to Ar plasmas under both electron cyclotron resonance and reactive ion etching conditions have been measured as a function of rf power, pressure, and exposure time. The combination of high microwave and high rf powers produces large increases (10–104 times) in sheet resistance of the nitrides, but conditions more typical of real etching processes (rf power 〈150 W) do not change the electrical properties. The nitrides are more resistant to damage introduction than other III–V semiconductors. The removal of damage-related traps occurs with an activation energy of ∼2.7 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114334
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  • 9
    Electronic Resource
    Electronic Resource
    Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 488-490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Material transformations occurring at the facets of optically "stressed'' planar InGaAsP/InP diode lasers have been investigated by transmission electron microscopy and energy dispersive x-ray spectroscopy. Catastrophic degradation lines (CDLs) which are characteristic of catastrophic optical damage are observed for optical power densities ∼107 W/cm2. Analysis of the microstructure reveals a series of 150 nm wide GaAs-rich tracks and the formation of unique void/InGa-rich precipitate pairs within the InGaAsP active layer. These observations suggest that the formation of local group III-rich regions is the first stage in the formation of CDLs. Subsequently, the strong absorption of the impinging laser beam leads to propagation of an InGa-rich melt, thereby producing the GaAs-rich tracks through a process similar to liquid phase epitaxy. These results are discussed in the context of standard physical models for CDLs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114545
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  • 10
    Electronic Resource
    Electronic Resource
    Damage introduction in InGaP by electron cyclotron resonance Ar plasmas (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3129-3131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Changes in sheet resistance of n- and p-type InGaP exposed to electron cyclotron resonance Ar plasmas have been used to measure the introduction of ion-induced damage. p-type material is much more resistant to change in its conductivity than n-type InGaP, indicating that electron traps are the predominant entity produced by the ion bombardment. For short (∼1 min) plasma exposures the ion current is more important than ion energy in producing resistance changes. Annealing of damage in both conductivity types occurs with an activation energy of ∼3.4±0.5 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114856
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