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  • 1
    Electronic Resource
    Electronic Resource
    Homoepitaxial growth of GaN using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2195-2198 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, experimental results are presented for the homoepitaxial deposition of a GaN overlayer onto a bulk single-crystal GaN substrate using molecular beam epitaxy. Transmission electron microscopy shows a superior structural quality of the deposited GaN overlayer when compared to heteroepitaxially grown layers. Photoluminescence shows narrow excitonic emission (3.467 eV) and the very weak yellow luminescence, whereas the bulk substrate luminescence is dominated by this deep level emission. These results show that homoepitaxy of GaN can be used to establish benchmark values for the optoelectronic properties of GaN thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363112
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hollow-anode plasma source for molecular beam epitaxy of gallium nitride : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 905-907 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: GaN films have been grown by molecular beam epitaxy (MBE) using a hollow-anode nitrogen plasma source. The source was developed to minimize defect formation as a result of contamination and ion damage. The hollow-anode discharge is a special form of glow discharge with very small anode area. A positive anode voltage drop of 30–40 V and an increased anode sheath thickness leads to ignition of a relatively dense plasma in front of the anode hole. Driven by the pressure gradient, the "anode'' plasma forms a bright plasma jet streaming with supersonic velocity towards the substrate. Films of GaN have been grown on (0001) SiC and (0001) Al2O3 at 600–800 °C. The films were investigated by photoluminescence, cathodoluminescence, x-ray diffraction, Rutherford backscattering, and particle-induced x-ray emission. The film with the highest structural quality had a rocking curve width of 5 arcmin, the lowest reported value for MBE growth to date. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146834
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  • 3
    Electronic Resource
    Electronic Resource
    Precise control of atomic nitrogen production in an electron cyclotron resonance plasma using N2/noble gas mixtures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 456-458 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic nitrogen flux and impacting ion kinetic energy are two important parameters which influence the quality of deposited nitride films using reactive growth. In this letter, a method is described to control the flux and kinetic energy of atomic and molecular nitrogen ions using an electron cyclotron resonance plasma with N2/Ar and N2/Ne gas mixtures. The results clearly show that the addition of neon to nitrogen plasma can remarkably enhance the production rate of atomic nitrogen due to Penning ionization involving the metastable state of Ne. In contrast, the addition of argon significantly decreases the rate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121898
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  • 4
    Electronic Resource
    Electronic Resource
    Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2702-2704 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 40 keV 1014 cm−2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116314
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Cholecystokinin-8 induces edematous pancreatitis in dogs associated with short burst of trypsinogen activation (1995)
    Springer
    Digestive diseases and sciences 40 (1995), S. 2152-2161 
    Details
    ISSN: 1573-2568
    Keywords: acute pancreatitis ; trypsinogen activation ; trypsinogen activation peptide ; pancreatic enzymes ; dogs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract To study the early pathogenesis of acute edematous pancreatitis in dogs, we examined the relationship of pancreatic hyperstimulation with cholecystokinin-8 (10 μg/kg/hr intravenously for 6 hr) to alterations in circulating pancreatic enzymes and pancreatic morphology with special reference to trypsinogen activation. Cholecystokinin-8 infusion was associated with increases in plasma amylase, lipase, trypsin-like immunoreactivity, and plasma and urine trypsinogen activation peptide. Pancreatic parenchymal swelling and interlobular and subcapsular fluid accumulations were detected ultrasonographically within 2 hr of cholecystokinin-8. Circulating trypsin-like immunoreactivity and trypsinogen activation peptide in urine reached a peak at 2 and 4 hr, respectively, then declined despite progressive increases in circulating amylase and lipase and intrapancreatic fluid. No significant changes were observed in dogs receiving a saline infusion. This study illustrates that cholecystokinin-8 induces edematous pancreatitis in dogs that is associated with a short-lived burst of trypsinogen activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02208999
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    Paper (German National Licenses)
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