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  • 1995-1999  (7)
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Material
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  • 1
    Electronic Resource
    Electronic Resource
    Low-frequency noise in n-GaN with high electron mobility (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5075-5078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm2/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10−2. This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the 1/f noise is much smaller in material with high mobility). The effects of band-to-band illumination on the low-frequency noise show that 1/f noise in GaN might be caused by the occupancy fluctuations of the tail states near the band edges. This mechanism of the 1/f noise is similar to that in GaAs and Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371482
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Low frequency noise in 4H silicon carbide (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1758-1762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bulk low frequency noise has been investigated in the 4H silicon carbide polytype. In the temperature range of 300–550 K the noise spectral density S is proportional to f−1.5, where f is the measurement frequency. A very low noise level has been observed for the bulk noise. At 300 K, the Hooge constant α is as small as (2–4)×10−6 at f=20 Hz and α≤5×10−7 at f=1300 Hz. At T≥600 K, the generation-recombination noise of a local level makes the main contribution into the total low frequency noise. The electron capture cross section σ of this level depends very strongly on temperature. In the temperature range of 620–700 K, the temperature dependence of σ can be expressed as σ∼exp(−E1/kT), with an activation energy E1 as high as 2.7 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364007
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  • 3
    Electronic Resource
    Electronic Resource
    AlGaN/GaN high electron mobility field effect transistors with low 1/f noise (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1089-1091 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise in the frequency region of 20 Hz to 20 kHz is investigated in AlGaN/GaN high electron mobility transistors (HEMTs) grown on SiC substrates. The noise spectra have the form of the 1/f (flicker) noise. The measured Hooge parameter is as low as 0.0001. This value is comparable with Hooge parameter values for commercial GaAs field effect transistors and approximately two orders of magnitude smaller than Hooge parameter value measured for AlGaN/GaN heterostructures grown on sapphire. The level of noise depends on the gate leakage current; the noise is much higher in devices with a high gate leakage current. The small measured values of the Hooge parameter are related to a smaller leakage current and to a better material quality of the devices on SiC substrates and to a high electron sheet density. The low levels of the 1/f noise in the AlGaN/GaN HEMTs on SiC substrates make them suitable for applications in communication systems. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122093
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  • 4
    Electronic Resource
    Electronic Resource
    Low-frequency noise in 4H–silicon carbide junction field effect transistors (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2669-2671 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise in 4H-silicon carbide junction field effect transistors (JFETs) has been investigated. JFETs with a buried p+n junction gate were manufactured by CREE Research Inc. Very low noise level has been observed in the JFETs. At 300 K the value of Hooge constant α is as small as α∼10−5 and the α value can be decreased by an appropriate annealing to α∼2×10−6. It has been shown that even these extremely low noise values are determined not by the volume noise sources but by the noise at the SiC–SiO2 interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116276
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  • 5
    Electronic Resource
    Electronic Resource
    Low frequency noise in two-dimensional metal-semiconductor field effect transistor (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3138-3140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low frequency noise in the two-dimensional metal-semiconductor field effect transistor (2D-MESFET) is reported. It is shown that the noise level S is rather small. At room temperature the value of Hooge constant α was about 2×10−5 for frequency f=20 Hz. The frequency dependence of the relative spectral density of current fluctuations SI/I2 at 300 K was close to S∼1/f0.6 in the frequency range 20 Hz–20 kHz. Two local maxima were observed in the temperature dependence of S in the ranges 100–180 K and 200–300 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115803
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  • 6
    Electronic Resource
    Electronic Resource
    1/f noise in strongly doped n-type GaAs under band-band illumination conditions (1997)
    Springer
    Semiconductors 31 (1997), S. 728-732 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The nature of 1/f noise, which appears in strongly doped n-type GaAs (electron density n 0⋍1017 cm−3) under band-band illumination, has been investigated by measuring the low-frequency noise under high geometric magnetoresistance conditions. It is shown that such noise is of a volume nature and is due to carrier number (and not mobility) fluctuations. It is shown experimentally for the first time that surface noise can be distinguished from volume noise by performing measurements under high geometric magnetoresistance conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187078
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of the conducting polydiacetylene poly-1,1,6,6-tetraphenylhexadiinediamine (1997)
    Springer
    Physics of the solid state 39 (1997), S. 690-694 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The electrical properties of the conducting polydiacetylene poly-1,1,6,6-tetraphenylhexadiinediamine (poly-THD) are investigated for the first time. The stability of the conductivity with time, the current-voltage characteristics over a broad range of applied voltages, the pressure dependence of the conductivity, and the low-frequency conductivity fluctuations in the range of analysis frequencies 20 Hz–10 kHz are studied. Appreciable anisotropy of the conductivity is discovered under strong uniaxial compression. Hooge’s parameter α is evaluated (α∼20 at 300 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129915
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