ISSN:
1063-7826
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Elektrotechnik, Elektronik, Nachrichtentechnik
,
Physik
Notizen:
Abstract The nature of 1/f noise, which appears in strongly doped n-type GaAs (electron density n 0⋍1017 cm−3) under band-band illumination, has been investigated by measuring the low-frequency noise under high geometric magnetoresistance conditions. It is shown that such noise is of a volume nature and is due to carrier number (and not mobility) fluctuations. It is shown experimentally for the first time that surface noise can be distinguished from volume noise by performing measurements under high geometric magnetoresistance conditions.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1134/1.1187078