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  • 1
    Electronic Resource
    Electronic Resource
    1/f noise in strongly doped n-type GaAs under band-band illumination conditions (1997)
    Springer
    Semiconductors 31 (1997), S. 728-732 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The nature of 1/f noise, which appears in strongly doped n-type GaAs (electron density n 0⋍1017 cm−3) under band-band illumination, has been investigated by measuring the low-frequency noise under high geometric magnetoresistance conditions. It is shown that such noise is of a volume nature and is due to carrier number (and not mobility) fluctuations. It is shown experimentally for the first time that surface noise can be distinguished from volume noise by performing measurements under high geometric magnetoresistance conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187078
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  • 2
    Electronic Resource
    Electronic Resource
    Purification and crystallization of the human RXRα ligand-binding domain–9-cisRA complex (2001)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 57 (2001), S. 434-437 
    Details
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The purification and crystallization of the stoichiometric complex of human RXRα ligand-binding domain (hRXRα LBD) bound to its natural ligand 9-cis retinoic acid (9-cisRA) are described. A three-step purification yields a pure and homogenous complex. Based on the crystallization conditions of several other nuclear receptors, an exhaustive crystallization screening using carboxylic acids as precipitating agents was performed in association with the use of polyhydric alcohols acting as cosmotropic solutes. Crystals of the hRXRα LBD–9-cisRA complex grew in a tripartite mixture containing sodium formate, glycerol and propane-1,2-diol. Micro- and macroseeding were necessary to improve both the size and the quality of crystals in order to make them suitable for structure determination.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0907444901000385
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  • 3
    Electronic Resource
    Electronic Resource
    Refined Linkage Map of Chromosome 5 in the Region of the Spinal Muscular Atrophy Gene
    Amsterdam : Elsevier
    Genomics 15 (1993), S. 521-524 
    Details
    ISSN: 0888-7543
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1006/geno.1993.1103
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  • 4
    Electronic Resource
    Electronic Resource
    Substrate twinning activates the signal recognition particle and its receptor (2004)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 427 (2004), S. 215-221 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Signal sequences target proteins for secretion from cells or for integration into cell membranes. As nascent proteins emerge from the ribosome, signal sequences are recognized by the signal recognition particle (SRP), which subsequently associates with its receptor (SR). In this complex, the SRP ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature02250
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  • 5
    Electronic Resource
    Electronic Resource
    Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3046-3052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models. Excess noise exhibits 1/f noise and generation-recombination (GR) noise components. A study of the GR components vs device geometry shows the spectral densities due to contact resistances to be negligible. Thus the noise sources due to the volume resistances are predominant, and have to be located in the bulk layer or in the space-charge region of the devices. These two possibilities concerning the location of the GR noise sources are investigated. For both cases, expressions for the variance and the relaxation time associated to fluctuations in the charge carriers are given. The comparison between the experimental data with the theoretical results shows that the GR noise sources are located in all probability in the space-charge region. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361245
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  • 6
    Electronic Resource
    Electronic Resource
    Numerical calculations of the thermal conductivities of composites: a 2-D model (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 118 (1994), S. 0 
    Details
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: A 2-D numerical finite-difference model has been developed to calculate the thermal conductivity of a composite material. The method is general in that the distribution of components within the material can be ordered or random. Results from the calculations are compared with those based on a geometric model in which the conductivity of the composite depends on the volume fractions of the different components and with conductivities calculated using real-space renormalization group theory (RSRG) and the effective medium approximation (EMA). The results from the present work compare well with the geometric model and the EMA, whereas the RSRG results generally indicate lower conductivities. Possible reasons for the differences between the RSRG theory and the other methods are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-246X.1994.tb03989.x
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  • 7
    Electronic Resource
    Electronic Resource
    Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2651-2657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements are performed on classical Si bipolar transistors and on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) mounted in a common-emitter configuration. Expressions for the spectral densities are derived taking into account a correlation between base and collector noise sources ib and ic. Values of emitter series resistances and of the base ideality factor are determined from these noise measurements. Then the spectral densities related to ib and ic as well as the cross-spectrum are extracted. In the case of classical Si transistors, the excess noise is attributed to the current noise source ib. The effect of the base series resistance is shown on the white noise. For the HBTs, the white noise is not reached. The excess noise is attributed to the correlated current noise sources ib and ic. From the analysis of the current spectral densities with base current the increase of correlation with bias is revealed. The extracted current spectral densities provide the foundation for the calculation of the coherence function associated to base and collector currents. This coherence function is presented in part II. The shape of the curves shows correlation phenomena to be mainly related to generation-recombination components. Also in part II, the spectral densities associated with the correlated and uncorrelated part of the collector current are extracted and studied versus bias and geometry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363930
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  • 8
    Electronic Resource
    Electronic Resource
    Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2658-2664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements were performed on heterojunction bipolar transistors (HBTs) and presented in part I of this article. These measurements revealed a partial correlation between base and collector noise current sources. With the help of the current spectral densities determined in part I, the coherence function is calculated and studied versus bias in this second part. Important values of the coherence function are obtained at the highest bias. Then the spectral densities Sc and Snc associated to the correlated and uncorrelated parts of the collector current noise source are extracted and analysed. All spectra exhibit excess noise. A difference in shape is clearly observed because of an important generation-recombination component occurring around 1 kHz on the correlated part only. To compare the behavior of different transistors a normalized coupling coefficient is introduced. The correlation is seen to increase with the scaling-down of devices. The investigation of the coupling coefficient with collector current density leads to hypothesis concerning the origin of the generation-recombination (g-r) components. Some components are shown to originate in the intrinsic transistor, and others in the extrinsic one, depending on frequency and type of HBT. Mainly the noise correlation is due to leakage currents and/or recombinations in the base-collector junction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363931
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2735-2739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First order and low-frequency noise measurements are performed on GaInP/GaAs heterojunction bipolar transistors. The base current is decomposed into different components. Passivated transistors exhibit higher gain values, hence the passivation layer limits recombinations on the extrinsic device. Noise is measured in the 1 Hz–100 kHz frequency range on common-emitter-mounted transistors. The 1/f component is analyzed. The emitter series resistances are extracted. The proximity of the base contact on the smaller devices lead to a higher noise level due to enhanced recombinations. Extrinsic and intrinsic phenomena are put forward with the help of noise analysis versus base current and collector current density. An attempt is made to locate the 1/f noise sources. Unlike first order measurements, noise characterization shows that the passivation layer can be at the origin of recombination-type phenomena. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368387
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  • 10
    Electronic Resource
    Electronic Resource
    Low-frequency noise in GaN/GaAlN heterojunctions (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3053-3055 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the results of the measurements of the low-frequency nitride/gallium aluminum nitride (GaN/GaAlN) heterojunctions grown on sapphire substrates. The noise spectra have the form of the 1/f noise with the Hooge parameter of approximately 10−2. The effects of band-to-band and impurity illumination on the low-frequency noise show that the nature of the 1/f noise in GaN might be a result of the occupancy fluctuations of the tail states near the band edges. This mechanism of the 1/f noise is similar to that in GaAs and Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121538
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