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  • 1
    Electronic Resource
    Electronic Resource
    Generation-recombination noise in submicron semiconductor layers: Influence of the edges (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2883-2885 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In highly doped thin semiconductor layers one often observes generation-recombination (g-r) noise with a broadened Lorentzian-like spectrum. In a theoretical analysis we have shown that such a spectrum can be ascribed to g-r processes between conduction band and monoenergetic traps in the edge of the layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360030
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  • 2
    Electronic Resource
    Electronic Resource
    Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3046-3052 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements are performed on heavily doped p-type GaAs transmission line models. Excess noise exhibits 1/f noise and generation-recombination (GR) noise components. A study of the GR components vs device geometry shows the spectral densities due to contact resistances to be negligible. Thus the noise sources due to the volume resistances are predominant, and have to be located in the bulk layer or in the space-charge region of the devices. These two possibilities concerning the location of the GR noise sources are investigated. For both cases, expressions for the variance and the relaxation time associated to fluctuations in the charge carriers are given. The comparison between the experimental data with the theoretical results shows that the GR noise sources are located in all probability in the space-charge region. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361245
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  • 3
    Electronic Resource
    Electronic Resource
    Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2651-2657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements are performed on classical Si bipolar transistors and on AlGaAs/GaAs heterojunction bipolar transistors (HBTs) mounted in a common-emitter configuration. Expressions for the spectral densities are derived taking into account a correlation between base and collector noise sources ib and ic. Values of emitter series resistances and of the base ideality factor are determined from these noise measurements. Then the spectral densities related to ib and ic as well as the cross-spectrum are extracted. In the case of classical Si transistors, the excess noise is attributed to the current noise source ib. The effect of the base series resistance is shown on the white noise. For the HBTs, the white noise is not reached. The excess noise is attributed to the correlated current noise sources ib and ic. From the analysis of the current spectral densities with base current the increase of correlation with bias is revealed. The extracted current spectral densities provide the foundation for the calculation of the coherence function associated to base and collector currents. This coherence function is presented in part II. The shape of the curves shows correlation phenomena to be mainly related to generation-recombination components. Also in part II, the spectral densities associated with the correlated and uncorrelated part of the collector current are extracted and studied versus bias and geometry. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363930
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  • 4
    Electronic Resource
    Electronic Resource
    Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2658-2664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise measurements were performed on heterojunction bipolar transistors (HBTs) and presented in part I of this article. These measurements revealed a partial correlation between base and collector noise current sources. With the help of the current spectral densities determined in part I, the coherence function is calculated and studied versus bias in this second part. Important values of the coherence function are obtained at the highest bias. Then the spectral densities Sc and Snc associated to the correlated and uncorrelated parts of the collector current noise source are extracted and analysed. All spectra exhibit excess noise. A difference in shape is clearly observed because of an important generation-recombination component occurring around 1 kHz on the correlated part only. To compare the behavior of different transistors a normalized coupling coefficient is introduced. The correlation is seen to increase with the scaling-down of devices. The investigation of the coupling coefficient with collector current density leads to hypothesis concerning the origin of the generation-recombination (g-r) components. Some components are shown to originate in the intrinsic transistor, and others in the extrinsic one, depending on frequency and type of HBT. Mainly the noise correlation is due to leakage currents and/or recombinations in the base-collector junction. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363931
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2735-2739 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First order and low-frequency noise measurements are performed on GaInP/GaAs heterojunction bipolar transistors. The base current is decomposed into different components. Passivated transistors exhibit higher gain values, hence the passivation layer limits recombinations on the extrinsic device. Noise is measured in the 1 Hz–100 kHz frequency range on common-emitter-mounted transistors. The 1/f component is analyzed. The emitter series resistances are extracted. The proximity of the base contact on the smaller devices lead to a higher noise level due to enhanced recombinations. Extrinsic and intrinsic phenomena are put forward with the help of noise analysis versus base current and collector current density. An attempt is made to locate the 1/f noise sources. Unlike first order measurements, noise characterization shows that the passivation layer can be at the origin of recombination-type phenomena. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368387
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