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  • 1
    Electronic Resource
    Electronic Resource
    Improvement of SiO2/Si interface by low-temperature annealing in wet atmosphere (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2107-2109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A postannealing technique was developed in order to improve the quality of SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition. The wave number of the antisymmetric stretching mode of Si–O–Si bonding in the SiO2 film increased from 1058 to 1069 cm−1 by an annealing in H2O vapor at 270 °C. It was estimated that averaged bonding angle of Si–O–Si was widened from 137.8° to 141.0°. The annealing in the H2O vapor ambient at 270 °C for 30 min efficiently reduced the interface trap density to 2.0×1010 cm−2 eV−1 and the effective oxide charges density from 7×1011 to 5×109 cm−2 for a metal-oxide-semiconductor (MOS) diode using the SiO2 film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113918
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  • 2
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing using the combustion of H2 with N2O (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1205-1207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combustion of H2 gas with N2O gas was investigated in order to rapidly heat substrate to a high temperature. A transient thermometry with a 100-nm-thick Cr film as a temperature sensor formed on quartz substrate was used to measure temperature change at the surface. The gas combustion was induced by heating a W filament. It propagated with a velocity higher than 100 m/s throughout a chamber for an initial total gas pressure of 500 Torr ([H2]/[N2O]=1). The sample surface is heated to 800 °C for an initial substrate temperature at 300 °C. The full heating time width at half maximum was 4.5 ms. This letter shows a possibility of millisecond-order rapid thermal treatment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117412
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  • 3
    Electronic Resource
    Electronic Resource
    Lactobacillus acidophilus Group Lactic Acid Bacteria Applied to Meat Fermentation (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 63 (1998), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Lactobacillus acidophilus group bacteria (L. acidophilus, L crispatus, L. amylovorus, L. gallinarum, L. gasseri, L. johnsonii), probiotic lactic acid bacteria, were applied to meat fermentation. Of six strains, L. gasseri (predominant lacto-bacilli in human intestinal tracts) JCM1131T exhibited greatest fermentation performance in meats. This strain resisted gastric acid and bile, and would thus have no detrimental effects in the intestinal tract. Inoculation of the strain depressed the propagation of S. aureus cells and their enterotoxin production during meat fermentation. Results suggest probiotic lactic acid bacteria could be effectively utilized for meat fermentation to produce healthy meat products.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1998.tb15782.x
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  • 4
    Electronic Resource
    Electronic Resource
    Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor (1999)
    Springer
    Applied physics 69 (1999), S. 221-224 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 73.20.At; 73.50.Gr; 73.50.Pz; 78.20.Ci
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Heat treatment with high-pressure H2O vapor was applied to improve interface properties of SiO2/Si and passivate the silicon surface. Heat treatment at 180–420 °C with high-pressure H2O vapor changed SiOx films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO2 films with a Si-O-Si bonding network similar to that of thermally grown SiO2 films. Heat treatment at 130 °C with 2.8×105 Pa H2O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiOx/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiOx films on the SiO2 films formed by heat treatment at 340 °C with high-pressure H2O vapor. The SiOx deposition reduced the recombination velocity from 100 cm/s to 48 cm/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050993
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  • 5
    Electronic Resource
    Electronic Resource
    Optical characterization of laser-induced crystallized silicon films (1996)
    Springer
    Applied physics 63 (1996), S. 333-336 
    Details
    ISSN: 1432-0630
    Keywords: 78.66.Db ; 61.80.Ba ; 81.10.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV ∼ 3 eV. However, the absorption coefficient was higher than 102 cm−1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( 〉 104 cm−1) in the low photon energy range (1.1 eV ∼ 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 1021 cm3 and the carrier mobility of 20 cm2/Vs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567322
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  • 6
    Electronic Resource
    Electronic Resource
    Optical characterization of laser-induced crystallized silicon films (1996)
    Springer
    Applied physics 63 (1996), S. 333-336 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.66.Db; 61.80.Ba; 81.10.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV∼3 eV. However, the absorption coefficient was higher than 102 cm-1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient (〉104 cm-1) in the low photon energy range (1.1 eV∼1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3×1021 cm3 and the carrier mobility of 20 cm2/Vs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050394
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