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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 12301-12304 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 656-663 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Ti-Si-N were synthesized by reactively sputtering TiSi2, Ti5Si3, or Ti3Si targets in an Ar/N2 gas mixture. They were characterized in terms of their composition by MeV 4He backscattering spectrometry, their atomic density by thickness measurements combined with backscattering data, their microstructure by x-ray diffraction and high-resolution transmission electron microscopy, and their electrical resistivity by four-point-probe measurements. All films have a metal–to–silicon ratio close to that of their respective targets. The as-deposited films are either entirely amorphous or contain inclusions of TiN-like nanometer-sized grains when the overall atomic composition of the films approaches the TiN phase in the ternary Ti-Si-N diagram. A correlation between the resistivity of the as-deposited films and their position in the ternary phase diagram is evident, indicating that at the atomic scale, the spatial arrangement of atoms in the amorphous phase and their bonding character can approximate those of the equilibrium phases. A mixture of nanocrystalline TiN and amorphous Si-N is proposed for some titanium- and nitrogen-rich films. The atomic density of some films exceeds 1023 at./cm3. The resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 h decreases the resistivity of the Ti-rich films deposited from the Ti5Si3 or the Ti3Si target, but increases that of the Si-rich films deposited from the TiSi2 target when the nitrogen content exceeds about 30 at. %. The effectiveness of these films as diffusion barriers between Si and Al or Cu is reported in Part II. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 664-671 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ti-Si-N films synthesized by reactively sputtering a TiSi2, a Ti5Si3, or a Ti3Si target in Ar/N2 gas mixture were tested as diffusion barriers between planar (100) Si substrates and shallow n+p Si diodes, and Al or Cu overlayers. The stability of the Ti-Si-N barriers generally improves with increasing nitrogen concentration in the films, with the drawback of an increase in the film's resistivity. Ti34Si23N43 sputtered from the Ti5Si3 target is the most effective diffusion barrier among all the Ti-Si-N films studied. It works as an excellent barrier between Si and Cu. A film about 100 nm thick, with a resistivity of around 700 μΩ cm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C for 30 min vacuum annealing. When it is used between Al and Si, the highest temperature of stability achievable with a 100-nm-thick film is 550 °C. A thermal treatment at 600 °C causes a severe intermixing of the layers. The microstructure, atomic density, and electrical resistivity of these films are described in an accompanying Part I. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4226-4228 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium nitride (GaN) thin films with a wurtzite structure were grown on fused silica (FS) substrates by pulsed laser ablation of a liquid gallium target in the presence of ammonia gas. X-ray diffraction measurement shows a single c-axis orientation for the GaN film grown with a thin (〈1000 A(ring)) zinc oxide (ZnO) film as an alignment layer. There is a great improvement in the surface morphology as well as optical transmission for the GaN film grown on the ZnO buffered FS substrate. The energy band gap obtained from the absorption spectrum is about 3.45 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6324-6326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-field magnetization measurements have been performed on both free-powder samples and magnetically aligned samples of R(Fe,Mn)11Ti (R=Y, Nd, Sm, Gd, Er) compounds at 4.2 K in a step field up to 28 T. The temperature dependence of ac susceptibilities of R(Fe,Mn)11Ti has been measured in a temperature range from 4.2 to 800 K. It has been found that both the magnetic moment of the transition-metal sublattice and the Curie temperature of RFe11−xMnxTi compounds decrease with increasing x. Spin reorientations occur in ErFe11−xMnxTi compounds as the result of competition between the uniaxial anisotropy of the transition-metal sublattice and the planar or conical anisotropy of the Er sublattice. The intersublattice exchange constants nRT of ErFe11−xMnxTi compounds have been deduced by the high-field free-powder method. The effect of the substitution of Fe by Mn on the magnetic anisotropies of R(Fe,Mn)11Ti with R=Y, Nd, Sm has been investigated. First-order magnetization processes take place in SmFe11−xMnxTi compounds when the external field is applied perpendicular to the alignment direction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Nd–Fe–Ti intermetallic compounds with a ThMn12 structure have been successfully prepared by mechanical alloying and then annealed. It has been found that the phase of the hexagonal TbCu7 structure is formed in Nd8Fe84Ti8 mechanical alloy powders annealed at temperatures ranging from 650 to 850 °C. With an increase in the annealing temperature Ta, the metastable TbCu7 structure transforms into a ThMn12 structure at Ta=900 °C. Consequently, the Curie temperature increases from 180 °C of TbCu7 structure at Ta=650 to 300 °C of ThMn12 structure at Ta=1050 °C. In the series of NdxFe92−xTi8 annealed at 960 °C for 30 min, it has been observed that the ThMn12 structure exists only over the range of compositions of 5≤x〈11, and the structure of the type Th2Zn17 is formed for x≥11. All the compounds are nitrited at 400 °C for 15 h, and the Curie temperatures are raised from 400 to 450 °C. The Nd9Fe83Ti8 powder, annealed at 960 °C for 30 min, and nitrided at 400 °C for 15 h, has a coercivity iHc=2.3 kOe. The low coercivity perhaps mainly results from an excessive growth of α-Fe grains due to the high annealing temperature necessary for forming the hard magnetic phase Nd(Fe,Ti)12Nδ. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 408-411 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnO thin films were epitaxially grown on c-sapphire substrates by pulsed laser deposition at substrate temperatures of 500–800 °C. The crystal structure of ZnO films follow the epitaxial relationship of (0001)ZnO(parallel)(0001)Al2O3(101¯0)ZnO(parallel)(112¯0)Al2O3. Both room temperature and cryogenic temperature photoluminescence showed a remarkable band-edge transition, and clear excitonic structures could be seen at cryogenic temperature. The optical refractive index was measured in the range of 375–900 nm by varying angle spectroscopic ellipsometry. The simulation was carried out using a Sellmeier equation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5776-5779 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially grown gallium nitride thin films were deposited on sapphire(0001) substrates with a thin zinc oxide buffer layer by a liquid target pulsed laser deposition technique. The GaN thin film optimized at a substrate temperature of 600 °C has an epitaxial relationship with ZnO buffered sapphire(0001) of (0001)GaN//(0001)ZnO//(0001)sapphire, and (101¯0)GaN//(101¯0)ZnO//(112¯0)sapphire. The surface morphology was also improved by applying a ZnO buffer layer shown by scanning electron microscopy. Although the as-grown GaN thin film showed no band edge or yellow band photoluminescence at room temperature, a weak band edge luminescence of 3.42 eV could be seen at 20 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 4005-4007 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model based on the basic electronic band structure of bulk Bi is developed to predict the dependence of the band structure and thermoelectric properties on nanowire width. By carefully tailoring the Bi wire size and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire widths. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed an extremely narrow absorption spectrum due to bound-to-continuum transition in GaAs/AlxGa1−xAs multiple quantum wells (MQWs). Its linewidth is only about one tenth of the values reported previously. Our calculation indicates that the broadening of the excited state in the continuum has little contribution to the absorption linewidth. We have grown a sample whose MQW region contains two kinds of wells with a minor thickness inhomogeneity. Its resultant absorption linewidth is six times as large as that of homogeneous well sample, which is in good agreement with our theoretical analysis. Thus we can suggest that the wider absorption spectra reported by many authors may be due to the well width inhomogeneity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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