Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Tip–sample distance feedback control in a scanning evanescent microwave microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2696-2698 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a means of tip–sample distance regulation for a scanning evanescent microwave microscope over conductive samples. Changes in resonant frequency and quality factor are measured, where changes in resonant frequency are related to the tip–sample capacitance and changes in quality factor are related to microwave absorption. With the analytical expression of the tip–sample capacitance as a function of tip–sample distance, we can quantitatively regulate the tip–sample separation. We demonstrated simultaneous noncontact imaging of topography and surface resistance with high spatial resolution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123940
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Combinatorial synthesis and high throughput evaluation of ferroelectric/dielectric thin-film libraries for microwave applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2185-2187 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A library of 256 differently doped thin films of (BaxSr1−x)TiO3 (where 0.5〈x〈1.0) was generated on a 1 in.×1 in. LaAlO3 substrate using multistep thin-film deposition techniques together with a quaternary masking strategy. Appropriate postannealing processing afforded high-quality epitaxial thin films. The microwave properties, i.e., dielectric constant and loss tangent, of samples in the library were characterized with a scanning-tip microwave near-field microscope at 1 GHz, and the results were found to be consistent with measurements made with interdigital electrodes. Specific dopants were found to significantly affect the dielectric constant and tangent loss. Tungsten, in particular, reduces the tangent loss. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121316
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in YBa2Cu3O7/Nd0.7Sr0.3MnO3 heterostructures using magnetic flux focusing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3432-3434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced low field magnetoresistance (MR) in Nd0.7Sr0.3MnO3 (NSMO) has been achieved by using high-Tc superconducting flux focusing devices made of YBa2Cu3O7(YBCO)/NSMO heterostructures. Two kinds of flux focusing schemes, gap, and washer devices, have been used where an applied magnetic field is expelled from patterned YBCO pads and focused onto a bridge of NSMO film. Using such a magnetic lens, at temperatures below 77 K ∼800% enhancement in MR=−(RH−R0)/R0 was observed for different samples. This corresponds to more than 10% change in the MR of NSMO in the presence of 200 G. For the maximum MR response in NSMO, the YBCO/NSMO heterostructures were deposited on (100) LaAlO3 substrate by pulsed laser deposition in situ so that the peak resistance temperature (Tp) of NSMO was below the superconducting transition temperature (Tc) of YBCO. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117283
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Dopant incorporation during epitaxial growth of a multicomponent oxide thin film from vapor phase: A case study of Fe/YBa2Cu3O7−δ system (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1674-1676 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Incorporation of Fe in YBa2Cu3O7−δ matrix during its epitaxial growth on (001) LaAlO3 by pulsed excimer laser ablation is examined. It is shown that oxygen pressure during deposition plays a critical role in the incorporation process and that a low-temperature postsynthesis annealing is essential for complete substitution. Clustering of iron atoms and its control via the anion controlled reactions are identified as the key features in this context. It is also shown by using atomic force microscopy that Fe incorporation influences the surface morphology. These issues are of importance in the formation of cationic defects in multicomponent thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113889
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Fabrication of all in-plane oriented a-axis YBa2Cu3O7−x/ insulator/ YBa2Cu3O7−x heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1824-1826 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane oriented a-axis heteroepitaxial multilayers consisting of YBa2Cu3O7−x/PrBa2Cu3O7−y bilayers and insulating LaSrGaO4 and Nd2CuO4 on (100) LaSrGaO4 substrates have been fabricated. φ-scan measurements of reflections from (101) Nd2CuO4 and (102) YBa2Cu3O7−x planes display twofold symmetry, indicating in-plane oriented growth of the top and middle layers in superconductor-insulator-superconductor structures for an insulating barrier thickness of 3000 A(ring). For structures with a Nd2CuO4 barrier, both top and bottom layers had Tc(R=0)≥85 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113334
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Oxygen pressure dependence of the grain size and surface morphology in YBa2Cu3O7−x a-axis films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1536-1538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The granularity and surface roughness of a-axis YBa2Cu3O7−x films grown on (100) LaAlO3, (100) SrTiO3, and (100) LaSrGaO4 by pulsed laser deposition has been studied. For fixed deposition conditions, the size and the shape of the grains varied from substrate to substrate, while the mean roughness remained the same. We were able to systematically control the grain size and smoothness of films on LaSrGaO4 and LaAlO3. By gradually reducing the oxygen pressure during the deposition we obtained films with increased grain size and much reduced surface roughness (mean ∼40 A(ring) over 5 ×5 μm2). Cracks observed in the films deposited on LaSrGaO4 at very low O2 pressures (∼20 mTorr) were successfully eliminated for deposition pressures above 40 mTorr. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113638
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Observation of Josephson effect in YBa2Cu3O7−x/Nd1.85Ce0.15CuO4−y bilayer junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2872-2874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Josephson junctions were fabricated at the interface of YBa2Cu3O7−x (YBCO) and Nd1.85Ce0.15CuO4−y (NCCO) in heteroepitaxially grown superconducting bilayers. Devices of various configurations and sizes were fabricated, and they display a resistively shunted junction like I–V characteristics with hysteresis at low temperatures. A clear ac Josephson effect was observed under microwave irradiation, and critical currents were completely suppressible by external magnetic fields. Oxygen diffusion or charge diffusion at the interface are possible origins for the barrier formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114813
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electric field effect on ultrathin YBa2Cu3O7−δ grain boundary Josephson junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1477-1479 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electric field on ultrathin YBa2Cu3O7−δ grain boundary Josephson junctions has been investigated. A conventional metal insulator superconductor field effect transistor structure consisting of a Pr0.55Y0.45Ba2Cu3O7−δ /YBa2Cu3O7−δ bilayer channel, a crystalline SrTiO3 dielectric, and an Au gate electrode is deposited on a SrTiO3 bicrystal substrate. At high bias current (Ibias(very-much-greater-than)Ic) the observed effect is compatible with a parallel resistor model using a value close to the bulk charge carrier density of YBa2Cu3O7−δ. At low bias current (Ibias≥Ic) an enhanced field effect not compatible with a parallel resistor model is observed. This enhanced effect is related to the field dependent dielectric properties of the crystalline SrTiO3 insulation layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114500
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Combinatorial synthesis and evaluation of epitaxial ferroelectric device libraries (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 894-896 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1−xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp interfaces were generated from amorphous layers on LaAlO3 substrates. Two hundred and forty different host/dopant combinations were synthesized on a 1/2 in. by 1/2 in. substrate, with 23 capacitors for each combination. Addition of 1.5 mol % W was found to increase the figure of merit (ε/Ileak) 220-fold and reduce the high-frequency (MHz and GHz) loss tangent by fourfold. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122030
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low temperature scanning-tip microwave near-field microscopy of YBa2Cu3O7−x films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2026-2028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the low temperature capability of a scanning-tip microwave near-field microscope to study superconductors. The shift in the quality factor of the microscope resonator can be used to obtain the temperature dependence of the surface resistance of a local region under the tip. Patterned YBa2Cu3O7−x films were scanned at various temperatures and surface resistance mapping was performed with high spatial resolution at 1.2 GHz. Superconducting transitions at different positions on a film can be detected. Edge-region defects in wet-etched patterns were observed and were shown to be nonsuperconducting at microwave frequencies at 80 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119776
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...