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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5829-5838 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical response of single grain-boundary weak links in superconducting YBCO thin films has been investigated. At temperatures well below the transition temperature, the grain boundary exhibits an optical response which is qualitatively different from transition edge response. Using a resistively shunted-junction model for the grain-boundary weak link, we find that the optical response below the transition temperature can be described by radiation induced thermal modulation of the critical currents of the weak links. The dependence on the bias current and the temperature distinguishes the weak-link optical response from the transition edge optical response. We discuss novel aspects of a potential radiation detector based on grain-boundary weak-link junctions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2474-2478 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the microstructure of (Ba, Sr)TiO3 films fabricated from BaF2/SrF2/TiO2 amorphous multilayers. Rutherford backscattering spectroscopy and x-ray diffraction studies show that a controlled thermal treatment can interdiffuse the multilayers so as to create predominantly single-phase epitaxial (Ba, Sr)TiO3 films. A high resolution cross-sectional transmission electron microscopy investigation of the processed films shows that they consist of large epitaxial grains of (Ba, Sr)TiO3 with atomically sharp interfaces with the LaAlO3 substrates. In addition, we have identified regions where polycrystalline and transient phases exist in small pockets in the film matrix. The results here indicate that the combinatorial thin-film synthesis using precursors can produce (Ba, Sr)TiO3 films in combinatorial libraries which exhibit properties similar to those films made by conventional techniques. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2872-2874 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Josephson junctions were fabricated at the interface of YBa2Cu3O7−x (YBCO) and Nd1.85Ce0.15CuO4−y (NCCO) in heteroepitaxially grown superconducting bilayers. Devices of various configurations and sizes were fabricated, and they display a resistively shunted junction like I–V characteristics with hysteresis at low temperatures. A clear ac Josephson effect was observed under microwave irradiation, and critical currents were completely suppressible by external magnetic fields. Oxygen diffusion or charge diffusion at the interface are possible origins for the barrier formation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4411-4413 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed variable-temperature multimode quantitative microwave microscopy of in situ epitaxial Ba1−xSrxTiO3 thin-film composition spreads fabricated on (100) LaA1O3 substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO3 to SrTiO3. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba1−xSrxTiO3 at microwave frequencies. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 894-896 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr1−xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp interfaces were generated from amorphous layers on LaAlO3 substrates. Two hundred and forty different host/dopant combinations were synthesized on a 1/2 in. by 1/2 in. substrate, with 23 capacitors for each combination. Addition of 1.5 mol % W was found to increase the figure of merit (ε/Ileak) 220-fold and reduce the high-frequency (MHz and GHz) loss tangent by fourfold. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3432-3434 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced low field magnetoresistance (MR) in Nd0.7Sr0.3MnO3 (NSMO) has been achieved by using high-Tc superconducting flux focusing devices made of YBa2Cu3O7(YBCO)/NSMO heterostructures. Two kinds of flux focusing schemes, gap, and washer devices, have been used where an applied magnetic field is expelled from patterned YBCO pads and focused onto a bridge of NSMO film. Using such a magnetic lens, at temperatures below 77 K ∼800% enhancement in MR=−(RH−R0)/R0 was observed for different samples. This corresponds to more than 10% change in the MR of NSMO in the presence of 200 G. For the maximum MR response in NSMO, the YBCO/NSMO heterostructures were deposited on (100) LaAlO3 substrate by pulsed laser deposition in situ so that the peak resistance temperature (Tp) of NSMO was below the superconducting transition temperature (Tc) of YBCO. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2696-2698 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a means of tip–sample distance regulation for a scanning evanescent microwave microscope over conductive samples. Changes in resonant frequency and quality factor are measured, where changes in resonant frequency are related to the tip–sample capacitance and changes in quality factor are related to microwave absorption. With the analytical expression of the tip–sample capacitance as a function of tip–sample distance, we can quantitatively regulate the tip–sample separation. We demonstrated simultaneous noncontact imaging of topography and surface resistance with high spatial resolution. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2026-2028 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have explored the low temperature capability of a scanning-tip microwave near-field microscope to study superconductors. The shift in the quality factor of the microscope resonator can be used to obtain the temperature dependence of the surface resistance of a local region under the tip. Patterned YBa2Cu3O7−x films were scanned at various temperatures and surface resistance mapping was performed with high spatial resolution at 1.2 GHz. Superconducting transitions at different positions on a film can be detected. Edge-region defects in wet-etched patterns were observed and were shown to be nonsuperconducting at microwave frequencies at 80 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3098-3100 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion milling on the surface crystallinity of the metal oxide substrates LaAlO3, SrTiO3, and NdGaO3 which are used for fabrication of high-Tc Josephson junctions and circuits. Ion channeling of the milled substrates reveals a damage-induced peak corresponding to a disordered layer of (approximate)60 Å at the surface. Annealing the substrates in oxygen ambient at various temperatures ranging from 600 to 1100 °C resulted in the regrowth of the damaged layer at the surface of the substrates as was indicated by the reduction in size of the surface peak observed in the channeled spectrum, as well as by formation of lattice steps as seen by atomic force microscopy. A significant reduction in the damage peak size and the formation of smooth completed lattice steps are seen only after annealing at temperatures ≥950 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2185-2187 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A library of 256 differently doped thin films of (BaxSr1−x)TiO3 (where 0.5〈x〈1.0) was generated on a 1 in.×1 in. LaAlO3 substrate using multistep thin-film deposition techniques together with a quaternary masking strategy. Appropriate postannealing processing afforded high-quality epitaxial thin films. The microwave properties, i.e., dielectric constant and loss tangent, of samples in the library were characterized with a scanning-tip microwave near-field microscope at 1 GHz, and the results were found to be consistent with measurements made with interdigital electrodes. Specific dopants were found to significantly affect the dielectric constant and tangent loss. Tungsten, in particular, reduces the tangent loss. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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