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Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice (1999)

Vigué, F. ; Brunet, P. ; Lorenzini, P. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 3345-3347

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Various configurations of pseudograded BeTe/ZnSe superlattices have been investigated to form a nonalloyed contact onto nitrogen-doped p-type ZnSe layers. Best results were obtained by using a fully N-doped superlattice with a 20-ML-thick pseudoperiod and with the thickness of individual layers in the pseudoperiod varying by 1 ML steps. A specific contact resistance of 6×10−2 Ω cm2 has been measured for a ZnSe p-type doping level of 2×1017 cm−3. Truly perfect ohmic contact is obtained. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.125346

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