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  • 1
    Electronic Resource
    Electronic Resource
    Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5115-5119 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and high resolution x-ray diffraction are used to characterize defects in ZnO layers grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire. Two- and three-dimensional types of growth modes are described and the observed mosaic structure is analyzed in each case. It is found that two-dimensional layers exhibit a roughness as low as 6 nm. Their subdomains have small lateral coherence lengths and a mean in-plane misorientation of ±0.4°, leading to an important dislocation density of 1–4×1010 cm−2. On the contrary, it is demonstrated that, through numerous interactions between dislocations, the three-dimensional growth mode leads to a better structural quality with a larger lateral coherence length and a smaller in-plane mosaic spread of ±0.07°. The total dislocation density is consequently reduced by 1 order of magnitude down to 3–5×109 cm−2 and the radical modification of the structure results in a change of the dislocation distribution. Our results thus demonstrate that two-dimensional growth mode and low full width at half maximum for symmetric x-ray diffraction are a not reliable indicator of a good structural quality. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412572
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  • 2
    Electronic Resource
    Electronic Resource
    Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 242-244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the growth and characterization of p-i-n photodiodes based on ZnBeSe and ZnMgBeSe compounds. High-quality diodes exhibiting dark current as low as 12 nA/cm2 at −2 V bias have been fabricated. The spectral response shows a high responsivity of 0.17 A/W at 450 nm, with a rejection of ∼104 at longer wavelengths. Our results thus demonstrate the potential of ZnSe-based heterostructures for efficient detection in the visible-ultraviolet region. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125715
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  • 3
    Electronic Resource
    Electronic Resource
    Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 194-196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of high-quality (0001)ZnO/Al2O3 films grown by plasma-enhanced molecular-beam epitaxy are investigated by x-ray diffraction and transmission electron microscopy. The only defects encountered are threading dislocations with a density of 1010–4×1010 cm−2. Most numerous dislocations are pure-edge dislocations (Burgers vector of 1/3〈112¯0〉), which accommodate slight in-plane misorientations between subgrains. The oxygen polarity of these films is also established. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384907
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  • 4
    Electronic Resource
    Electronic Resource
    Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4190-4192 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar geometry Schottky barrier photodiodes designed for visible-blind ultraviolet detection have been fabricated. They are based on ZnMgBeSe alloys grown by molecular-beam epitaxy. High crystalline quality is achieved, which leads to a high responsivity (0.17 A/W at 375 nm) and a sharp cutoff of more than three orders of magnitude. As attested by the linear variation of the photocurrent with the optical excitation, there is no internal gain mechanism. A detectivity of 2×1010 mHz1/2 W−1 is obtained showing that low-noise devices with high sensitivity have been fabricated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381415
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  • 5
    Electronic Resource
    Electronic Resource
    Ohmic contacts to p-type ZnSe using a ZnSe/BeTe superlattice (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3345-3347 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Various configurations of pseudograded BeTe/ZnSe superlattices have been investigated to form a nonalloyed contact onto nitrogen-doped p-type ZnSe layers. Best results were obtained by using a fully N-doped superlattice with a 20-ML-thick pseudoperiod and with the thickness of individual layers in the pseudoperiod varying by 1 ML steps. A specific contact resistance of 6×10−2 Ω cm2 has been measured for a ZnSe p-type doping level of 2×1017 cm−3. Truly perfect ohmic contact is obtained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125346
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