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  • 1990-1994  (2)
  • 1985-1989  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Incorporation of defects during processing of mercuric iodide detectors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 86-92 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of chemical etching in KI solution, heating, and vacuum exposures of HgI2 were individually studied by low-temperature photoluminescence (PL) spectroscopy. Each of these processing steps is important in the manufacturing of mercuric iodide detectors and may be responsible for the incorporation of carrier traps both in the near-surface region and in the bulk. The results of etching experiments showed that the near-surface region has a different defect structure than the bulk, which appears to result from iodine deficiency. Bulk heating at 100 °C also modifies the defect structure of the crystal. Vacuum exposure has an effect similar to chemical etching, but it does not cause significant degradation of the stoichiometry for recently KI-etched specimens. These studies suggest that some features in the PL spectra of HgI2 are associated with stoichiometry of the specimens.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347074
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of copper electrodes for mercuric iodide detector applications (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7265-7267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Copper diffusion in mercuric iodide was studied by low-temperature photoluminescence (PL) spectroscopy and Auger electron spectroscopy. A broad radiative emission band at a wavelength of about 6720 A(ring) in the PL spectra was found to be related to Cu incorporation in the crystal. PL spectra obtained from surface doping experiments indicate that Cu is a rapid diffuser in HgI2 bulk material. Auger electron spectroscopy performed as a function of depth from the crystal surface confirms the rapid bulk diffusion process of Cu in HgI2. Fabrication of HgI2 nuclear detectors with Cu electrodes indicates that Cu is not acceptable as an electrode material, which is consistent with the fact that it diffuses easily into the bulk crystal and introduces new radiative recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344560
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of strain on the band structure of GaAs and In0.2Ga0.8As (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 308-310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence-band structures of 50-A(ring)-thick layers of GaAs(001) in tension and In0.2Ga0.8As(001) in compression have been determined using angle-resolved photoemission spectroscopy. Our studies show that the Δ3+Δ4 bands and the Δ1 band respond differently to the strain perturbation. For strained GaAs(001), the Δ3+Δ4 bands (Px+Py-like) are shifted up in energy by a maximum amount of 0.3 eV, while in contrast, the Δ1 band (Pz-like) is shifted down by about 0.1 eV. For strained In0.2Ga0.8As(001), the band shifts are in the opposite direction, consistent with the opposite strain conditions. For both materials, the strain-induced changes cannot be characterized simply by rigid band shifts, but rather exhibit significant wave vector dependence. This results in a reduction of the effective mass of the Δ3+Δ4 bands for both GaAs and In0.2Ga0.8As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99502
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    Paper (German National Licenses)
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