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  • 1990-1994  (1)
  • 1985-1989  (5)
  • 1
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 721-726 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The a-CSiSn alloy produced by rf magnetron sputtering in SiH4, CH4, and Ar atmosphere was studied as a function of the substrate temperature. The composition of the films was determined by elastic recoil detection analysis and by Rutherford backscattering measurements, and the density was then deduced. Results of a study of optical and electrical properties and of the bonding and structure of the films indicate that with the increase of the substrate temperature, the density and the imaginary part of the dielectric constant increases, the optical gap decreases, and the dark conductivity presents a different conduction mechanism depending on the substrate temperature. A correlation between the results obtained from nuclear measurements and IR spectroscopy is presented.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 611-618 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A detailed study of the optical properties of sputtered hydrogenated amorphous silicon films with varying hydrogen concentration is presented here. The energy dependence of the absorption coefficient is looked into, in detail, from a point of view of understanding the well known Tauc rule and the alternate relations being proposed in recent years. Spectroscopic and band-structural models like Wemple–Didomenico and Penn are then utilized to analyze the optical parameters near the band-gap region of the wavelength spectra. Extensive comparisons of our results are made with those of sputtered a-Si:H films of other workers, glow discharge prepared a-Si:H, chemically vapor deposited and evaporated a-Si, and also crystalline silicon. The similarities in the variation of the optical properties of a-Si:H with increasing hydrogen concentration (or decreasing measurement temperature) to that of crystalline silicon with decreasing measurement temperature lead us to interesting conclusions. Thus, it seems that decreasing disorder (topological or thermal) in a-Si:H is equivalent to decreasing thermal disorder in c-Si, at least as far as the disorder-optical property relationships are concerned.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5424-5427 
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The optical properties of undoped α-Si:H films prepared using magnetron sputtering at different deposition conditions were studied by measuring their transmittance and reflectance between λ=0.25 and λ=1.5 μm and their thickness. The extracted optical constants are interpreted to give values of the band gap. Values of dark conductivity and activation energy are also obtained. The study has been extended to structures SnO2/α-Si:H/substrate. From measurements of transmittance and reflectance of the system optical constants of the components can be extracted.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    Digitale Medien
    Digitale Medien
    Springer
    Il nuovo cimento della Società Italiana di Fisica 13 (1991), S. 795-800 
    ISSN: 0392-6737
    Schlagwort(e): Noise processes and phenomena
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Notizen: Summary Measurements of photoinduced current noise in amorphous silicon solar cells are reported. A 1/f n (n≈1) component, superimposed to a frequency-independent one due to simple shot noise, is attributed to the presence of defects limiting the conversion efficiency of the cell. In particular, large defects, such as local shorts or pin holes, can easily be detected since they are characterized by a very large increase of the 1/f n component. In general, even in the absence of such large defects, a correlation between the intensity of the 1/f n component and the cell conversion efficiency is found.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 5
    Digitale Medien
    Digitale Medien
    Springer
    Il nuovo cimento della Società Italiana di Fisica 9 (1987), S. 393-408 
    ISSN: 0392-6737
    Schlagwort(e): Electronic properties of specific thin films
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Beschreibung / Inhaltsverzeichnis: Riassunto Sono stati realizzati film dia-SiC:H mediante glow-discharge in atmosfera Ar-SiH4-CH4 con differenti rapporti CH4/SiH4. La concentrazione di H nei film è stata determinate usando la reazione di risonanza1H(15N, αγ)12C ed il contenuto di carbonio mediante spettrometria Rutherford-backscattering. Da misure di trasmittanza e riflettanza nella zona UV-visibile-vicino IR sono state ricavate le costanti ottiche, l'indice di rifrazione, la costante dielettrica, il coefficiente di assorbimento e il gap ottico. Un esame delle bande degli spettri vibrazionali dei vari legami CH, CSi e SiH ottenuti mediante misure di trasmissione nell'IR ha fornito un'interpretazione sulla struttura dei film. Sono state anche realizzate misure di conduttività di buio e di fotoconduttività sotto illuminamento di 500 W/m2. I risultati indicano che all'aumentare del contenuto di carbonio l'indice di rifrazione diminuisce sistematicamente per tutte le lunghezze d'onda, il gap ottico aumenta, la conduttività di buio diminuisce e nella configurazione strutturale tendono a prevalere le catene contenenti il carbonio.
    Kurzfassung: Резюме Ъыли осаждены две системы пленокa-SiC:H в атмосфере Ar-SiH4-CH4, чтобы исследовать переменного отношения CH4/SiH4 на физические свойства. Состав пленок определяется с помощью резонансных ядерных реакций и измерений обратного резерфордовского рассеяния. Также определяются оптичззкся щеяь и показатель преломления с помщяю иемерений пронисаемости в видимойультрафиолетовой-близкой инфракрасной области, конфигурацуя связи с помощью измерений инфракрасной проницаемости и удельное сопротивление и фотопроводимость с помошью єлектрических измерений в темноте м при освешении 500 Bt/M2. Полученные результаты покасывают, что с увеличением содержания углерода показатель преомления систематически уменьшается для всех длин волн, єнергетическая щель увеличивается, темновое сопротивление увеличивается, конфигурация связи становится доминирующей за счет углерод-содержащих цепочек и структура становится более разориентировнной.
    Notizen: Summary Two sets ofa-SiC:H films were deposited by glow discharge in an Ar-SiH4-CH4 atmosphere to investigate the effect of a variable CH4/SiH4 ratio on the physical properties. The composition of the films was determined by resonant nuclear reaction and by Rutherford backscattering measurements, the optical gap and the index of refraction by transmissivity measurements in the visible-UV-NIR range, the bonding configuration by IR transmissivity measurements and the resistivity and the photo-conductivity by electrical measurements in the dark and under a 500 W/m2 illumination. Results indicate that with increasing carbon content the refractive index decreases systematically over all wavelengths, the energy gap increases, the dark resistivity increases, the bonding configuration becomes dominated by carbon-containing chains and the structure more disordered.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Il nuovo cimento della Società Italiana di Fisica 8 (1986), S. 447-463 
    ISSN: 0392-6737
    Schlagwort(e): Photoconduction and photovoltaic effects ; photodielectric effects
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Physik
    Beschreibung / Inhaltsverzeichnis: Riassunto In questo lavoro si presenta un modello per la determinazione e l'ottimizzazione dei parametri fondamentali atti a definire la qualità delle celle solari amorfe, specificando le proprietà ottiche, elettriche e di ricombinazione. Esso può essere applicato a qualunque sistema di celle solari amorfe. Sono fornite le espressioni teoriche ed è descritto un metodo iterativo per il calcolo numerico della densità di corrente di alcuni tipi di celle. Sono anche presentati i risultati ottenuti da calcoli eseguiti col computer e basati su questo modello.
    Notizen: Summary A model for determination and optimization of the fundamental parameters defining the quality of amorphous solar cells in which optical, electrical and recombination properties are specified is developed. It can be applied to any amorphous solar-cell systems. This paper gives theoretical expressions and describes an iterative method of numerical calculation for the current density of different cells. Results of computer calculations based on this model are presented.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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