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  • 1990-1994  (4)
  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2324-2329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAlAs lattice matched on InP heterostructures with a thin InAs layer of variable thickness intentionally added at the interface has been grown by molecular-beam epitaxy and characterized by photoluminescence. Radiative transitions, the position of which is correlated with the InAs thickness, are systematically observed, even in samples without any added InAs layer. This shows that, even in the latter case, type-I transitions are observed at the interface. Following this result, it is proposed that a transition around 1.2 eV, previously assigned to type-II transitions, results in fact from type-I recombinations in a quantum well at the interface. The spatially indirect type-II transitions would occur at ≈1.3 eV, and could be observed up to now only for reverse interfaces (InP grown on InAlAs).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357604
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Charged dislocation induced optical absorption in GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1261-1264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a model of optical absorption induced by electric fields resulting from charged dislocations. It is shown to account satisfactorily for the deformation induced absorption in GaAs, which exhibits the shift of the band-to-band transitions often observed in semiconductors. This model considers that dislocations introduce energy levels in GaAs and its implications should be rather general for most semiconductors in which dislocations introduce energy levels in the band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343020
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A quantitative study of the creation of EL2 defects in GaAs by plastic deformation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1516-1520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption quenching measurements have been carried out on a lot of plastically deformed n+ samples (either Si or Se doped), which were EL2 free before deformation. It is shown that the density of EL2 defects created during the deformation increases linearly first with the dislocation density and then saturates for higher strains. The introduction rate of EL2 is also higher in the Se- than in the Si-doped material. Photoluminescence characterization of these same samples shows the appearance of the 0.93-eV band only after deformation; this band being associated with the divacancy. A possible model of EL2 creation during deformation is finally proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343421
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Lateral straggle of focused-ion-beam implanted Be in GaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2267-2269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral distribution of focused-ion-beam implanted Be atoms in GaAs has been studied by measuring the electrical resistivity in grating structures. The gratings were implanted at 230 and 260 keV with periods from 0.04 to 3 μm oriented both parallel and perpendicular to the direction of current flow. In the parallel case an initially n-type conducting layer was converted to an insulating layer as the period of the unannealed implants was decreased. The resistivity was found to be modulated for grating periods even below 0.1 μm. In the perpendicular case the gratings were implanted into both on-axis and off-axis, semi-insulating GaAs between two p-type regions and rapid thermal annealed. The minimum half-width of an implanted line was found to be 140 nm in on-axis material. In off-axis material the width was 50 to 90 nm larger depending on dose. In all cases the width is smaller than the 450 nm straggle predicted by Monte Carlo simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107050
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Dislocation energy bands in GaAs: An optical absorption study (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 281-286 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical expressions of the piezoelectric and deformation electric fields associated with dislocations in zinc-blende semiconductors are presented. They are used to calculate the optical absorption which they induce. These results are compared with the previously calculated charged-line field absorption. For GaAs, we find that the latter one is prevailing and that the deformation electric field can be always neglected. Application of this model to experimental results in GaAs lead us to propose a two dislocation energy band scheme. One dislocation energy band D1 is located above the valence band and the other D2 is near midgap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345249
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of Dislocations on Galvanomagnetic and Optical Properties of GaAs (1991)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 38-41 (Jan. 1991), p. 1367-1372 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/05/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.38-41.1367.pdf
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Matter effects for solar neutrino oscillations (1986)
    Springer
    The European physical journal 32 (1986), S. 499-511 
    Details
    ISSN: 1434-6052
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Possible solar neutrino oscillations are reviewed in the two-neutrino case taking into account the effect of coherent forward scattering when neutrinos travel through the sun and earth. As recently pointed out by Mikheyev and Smirnov this effect can induce a large suppression of the solar νe flux for values of Δm 2 around 10−4–10−8 eV2 even for small values of the mixing angle. It also may cause substantial modifications of the solar neutrino spectrum shape. All this may be used for determining Δm 2 and sin2 2θ in a large domain from the experimental results of the chlorine, gallium, indium and heavy water detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01550771
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    Paper (German National Licenses)
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