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  • 1990-1994  (3)
  • 1985-1989  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 318-320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural aspects and annealing behavior of induced damage by Ga+ ion implantation of a GaAs single quantum well as investigated by transmission electron microscopy are presented. After rapid thermal annealing, vacancy and interstitial perfect dislocation loops are found on 〈110〉 and 〈111〉 type planes. In contrast to previous results from superlattices of AlGaAs/GaAs, we find dislocation loops in the AlGaAs as well as in the GaAs layer. The cathodoluminescence intensity of the implanted quantum well recovers completely after annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339152
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4723-4729 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the role of strained layer superlattices in threading dislocation reduction in the growth of Ge0.5Si0.5 alloys on Si(100) substrates by molecular-beam epitaxy. Several superlattice structures are studied with zero, negative, and positive net strains with respect to a Ge0.5Si0.5 buffer layer. Control samples consisting of uniform strained layers are also grown for each superlattice structure. Transmission electron microscopy analysis of defect densities is found to be hampered by defect losses from thin foils, particularly in the plan view geometry. It is found that although strained interfaces are effective at deflecting threading dislocations into the interfacial plane, little surface threading dislocation density reduction is observed as a function of the presence of the superlattices for dislocation densities of the order 108 cm−2. This observation may be understood in terms of threading dislocation propagation at strained interfacial planes, and a simple predictive model is developed for defect interaction probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343223
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1605-1607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe in situ electron microscrope observations of the motion of misfit dislocations in Ge0.3Si0.7/Si(100) heterostructures. A 350 A(ring) Ge0.3Si0.7/Si(100) structure is grown by molecular beam epitaxy at 550 °C. Although this is below the critical thickness for this composition and growth temperature, we observe misfit dislocation nucleation and propagation as a function of in situ annealing temperature in the electron microscope. This confirms the metastable nature of GeSi strained-layer growth. The misfit dislocation density increases continuously with temperature, passing through an accelerated transition at ∼850 °C. We also report preliminary measurements of misfit dislocation velocity, which establish the identical relationship between threading and misfit dislocations in this system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99055
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Superlattice modulation and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO and SrTiO3 substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1579-1581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the superlattice modulation, microstructure, and epitaxy of Tl2Ba2Ca2Cu3O10 thin films grown on MgO [100] and SrTiO3 [100] substrates by dc diode sputtering. Films grown on MgO were found to be quite clean with the c axis perpendicular to the substrate. However, no in-plane orientational relationship to the substrate was found. Films grown on SrTiO3, on the other hand, showed very good epitaxy to the substrate despite the presence of second phases. Films grown on MgO also exhibited a longer coherence length of the superlattice modulation than those grown on SrTiO3 under identical conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101387
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Fabrication and properties of epitaxial ferroelectric heterostructures with (SrRuO3) isotropic metallic oxide electrodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2570-2572 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90° off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal electrodes, showing little degradation over 1010 cycles, with a large remnant polarization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110436
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Precipitates in YBa2Cu3O7−δ thin films annealed at low oxygen partial pressure (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3201-3203 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the precipitates in YBa2Cu3O7−δ(YBCO) thin films grown by the BaF2 process in pO2=4 Torr and 700 °C. While stoichiometric films result in BaCuO2 surface precipitates, we have found Y2Cu2O5 precipitates embedded in the matrix of the same film. Off stoichiometric films with Ba/Y〈1.5 have a precipitate-free surface but with higher abundance of Y2Cu2O5 in the film matrix. The estimated densities of the two precipitates favor a stoichiometric YBCO film matrix. This behavior is not explainable in terms of phase equilibria and is attributed to kinetic effects. The electrical properties of the films degrade as the Ba/Y ratio deviates from 2.00.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109624
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Single domain high Tc La2−xSrxCuO4 films with tilted CuO2 planes (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The two fold degeneracy inherent to epitaxial growth of high Tc films on (101) perovskite substrates has been removed successfully. This is demonstrated by single domain, (103) oriented La2−xSrxCuO4 films of 0.04≤x≤0.34 on vicinal (101) SrTiO3 substrates using 90° off-axis sputtering. (101) substrates that have the surface normal rotated about [010] by 0.5°–3.5° produced essentially single crystal films with the c-axis direction determined by the sense of the miscut. Misoriented antidomains (103)' have been eliminated effectively to a percentage less than 1 part in 104. The mechanism for symmetry breaking is understood on the basis of a surface step model in which the energetics promoting single domain growth is derived from nucleation and epitaxy on the (001) face found at surface steps of vicinal substrates. Furthermore, the incommensuration of the c axis interplanar spacings with the a, b, plane lattice parameters in the La2−xSrxCuO4 structure provides a natural selection of (103) domains over (103)' domains. The model predicts the application to other high Tc materials such as the Bi2Sr2CanCun+1Ox, and the Tl2Ba2CanCun+1Ox families.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107149
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    Paper (German National Licenses)
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